SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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Untitled
Abstract: No abstract text available
Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323684M
K7Q321884M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
K7Q3236
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
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PDF
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JTAG 10P
Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
Text: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit,
K7R640982M
JTAG 10P
K7R641882M-FC25
K7R640982M-FC25
K7R643682M-FC20
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Untitled
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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K7R643684
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
K7R643684
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PDF
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Untitled
Abstract: No abstract text available
Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643682M
K7I641882M
2Mx36
4Mx18
11x15
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PDF
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Untitled
Abstract: No abstract text available
Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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K7Q323652M
K7Q321852M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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Untitled
Abstract: No abstract text available
Text: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I323684C
K7I321884C
1Mx36
2Mx18
11x15
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PDF
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Untitled
Abstract: No abstract text available
Text: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7J643682M
K7J641882M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit
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Untitled
Abstract: No abstract text available
Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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K7K1636T2C
K7K1618T2C
512Kx36
K7S1636T4C
K7S1618T4C
1Mx18
11x15
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PDF
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Untitled
Abstract: No abstract text available
Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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K7Q323654M
K7Q321854M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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Untitled
Abstract: No abstract text available
Text: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7I643682M
K7I641882M
2Mx36-bit,
4Mx18-bit
2Mx36
4Mx18
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PDF
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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IS61NLF204836B
Abstract: No abstract text available
Text: IS61NLF204836B/IS61NVF/NVVF204836B IS61NLF409618B/IS61NVF/NVVF409618B 2M x 36 and 4M x 18 72Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM ADVANCED INFORMATION FEBRUARY 2013 FEATURES DESCRIPTION • 100 percent bus utilization The 72 Meg product family features high-speed, low-power
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IS61NLF204836B/IS61NVF/NVVF204836B
IS61NLF409618B/IS61NVF/NVVF409618B
100-pin
119-ball
165ball
4836B/IS61NVF/NVVF204836B
IS61NLF204836B
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q4A4436RBG,
R1Q4A4418RBG
144-Mbit
R10DS0146EJ0101
R1Q4A4436RBG
304-word
36-bit
R1Q4A4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit
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R1QLA4436RBG,
R1QLA4418RBG
144-Mbit
R10DS0144EJ0100
R1QLA4436RBG
304-word
36-bit
R1QLA4418RBG
608-word
18-bit
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K7I641882M
Abstract: K7I643682M
Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I643682M
K7I641882M
2Mx36
4Mx18
11x15
K7I641882M
K7I643682M
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PDF
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K7K1636U
Abstract: No abstract text available
Text: K7K1636U2C K7K1618U2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7K1636U2C
K7K1618U2C
512Kx36
1Mx18
11x15
K7K1636U
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PDF
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Untitled
Abstract: No abstract text available
Text: K7J323682M K7J321882M K7J320882M Preliminary 1Mx36 & 2Mx18 & 4Mx8 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 200 1 Advance 0.1 1. 2. 3. 4.
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K7J323682M
K7J321882M
K7J320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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D0-35
Abstract: K7J321882M K7J321882M-FC16 K7J321882M-FC20 K7J321882M-FC25 K7J323682M K7J323682M-FC16 K7J323682M-FC20 K7J323682M-FC25 7P JTAG
Text: K7J323682M K7J321882M 1Mx36 & 2Mx18 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 2001 Advance 0.1 1. Pin name change from DLL to Doff 2. Update JTAG test conditions.
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K7J323682M
K7J321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
D0-35
K7J321882M
K7J321882M-FC16
K7J321882M-FC20
K7J321882M-FC25
K7J323682M
K7J323682M-FC16
K7J323682M-FC20
K7J323682M-FC25
7P JTAG
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit
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R1QEA4436RBG,
R1QEA4418RBG
144-Mbit
R10DS0142EJ0100
R1QEA4436RBG
304-word
36-bit
R1QEA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit
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R1QHA4436RBG
R1QHA4418RBG
144-Mbit
R10DS0145EJ0100
304-word
36-bit
R1QHA4418RBG
608-word
18-bit
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Untitled
Abstract: No abstract text available
Text: K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7K1636T2C
K7K1618T2C
512Kx36
1Mx18
11x15
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PDF
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