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    bzx 850

    Abstract: bzx 850 30
    Text: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses


    Original     		PDF CY7C1412AV18 CY7C1414AV18 CY7C1412AV18, CY7C1414AV18 bzx 850 bzx 850 30

    AS7C331MNTD32A

    Abstract: AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A
    Text: November 2004 AS7C331MNTD32A AS7C331MNTD36A 3.3V 1M x 32/36 Pipelined SRAM with NTDTM Features • Organization: 1,048,576 words × 32 or 36 bits • NTD architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.2/3.5/3.8 ns


    Original     		PDF AS7C331MNTD32A AS7C331MNTD36A 100-pin 165-ball AS7C331MNTD32A AS7C331MPFD32A AS7C332MPFD18A AS7C332MPFS18A

    IS61QDB22M36

    Abstract: D0-35 IS61QDB24M18
    Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 2) Synchronous SRAMs . A May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Two echo clocks (CQ and CQ) that are delivered


    Original     		PDF IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-300M3 IS61QDB24M18-300M3L IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB24M18-250M3 IS61QDB24M18-250M3L IS61QDB22M36-200M3L IS61QDB24M18-200M3L IS61QDB22M36 D0-35 IS61QDB24M18

    IS61DDB21M36

    Abstract: 61DDB22M18 IS61DDB22M18-300M3L IS61DDB22M18 IS61DDB22M18-250M3LI
    Text: 36 Mb 1M x 36 & 2M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . I May 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF oDDB22M18-250M3L 1Mx36 2Mx18 IS61DDB21M36 61DDB22M18 IS61DDB22M18-300M3L IS61DDB22M18 IS61DDB22M18-250M3LI

    D0-35

    Abstract: IS61QDB42M36 IS61QDB42M36-300M3 IS61QDB44M18 IS61QDB44M18-300M3
    Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 4) Synchronous SRAMs 7 Q . May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.


    Original     		PDF IS61QDB42M36-300M3 IS61QDB44M18-300M3 IS61QDB42M36-250M3 IS61QDB44M18-250M3 2Mx36 4Mx18 D0-35 IS61QDB42M36 IS61QDB42M36-300M3 IS61QDB44M18 IS61QDB44M18-300M3

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    IS61QDB41M36

    Abstract: 61QDB41M36 IS61QDB41M36-250M3L D0-35 IS61QDB41M36-250M3 IS61QDB42M18
    Text: 36 Mb 1M x 36 & 2M x 18 QUAD (Burst of 4) Synchronous SRAMs . I April 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with late write operation.


    Original     		PDF IS61QDB41M36-250M3 IS61QDB41M36-250M3L IS61QDB41M36-200M3 IS61QDB42M18-200M3 1Mx36 2Mx18 IS61QDB41M36 61QDB41M36 IS61QDB41M36-250M3L D0-35 IS61QDB41M36-250M3 IS61QDB42M18

    IS61LPD51236A

    Abstract: IS61LPD102418A IS61VPD102418A IS61VPD51236A
    Text: IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 1024K 100-Pin 165-pin IS61LPD102418A IS61VPD102418A

    Untitled

    Abstract: No abstract text available
    Text: CY7C1460AV25 CY7C1462AV25 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1460AV25 CY7C1462AV25 36-Mbit CY7C1460AV25/CY7C1462AV25 CY7C14s

    CY7C1355C

    Abstract: No abstract text available
    Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead


    Original     		PDF CY7C1355C, CY7C1357C CY7C1355C/CY7C1357C CY7C1355C

    CY7C2663KV18

    Abstract: CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC
    Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		PDF CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: CY7C2663KV18 CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC

    CY7C25442KV18

    Abstract: CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems
    Text: CY7C25442KV18 72-Mbit QDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency with ODT Features • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency


    Original     		PDF CY7C25442KV18 72-Mbit CY7C25442KV18 CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:


    Original     		PDF CY7C1568KV18/CY7C1570KV18 72-Mbit CY7C1568KV18 CY7C1570KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C2642KV18/CY7C2644KV18 144-Mbit QDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT Features • Separate independent read and write data ports


    Original     		PDF CY7C2642KV18/CY7C2644KV18 144-Mbit 333-MHz

    Untitled

    Abstract: No abstract text available
    Text: CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth


    Original     		PDF CY7C1319KV18/CY7C1321KV18 18-Mbit CY7C1319KV18 333-MHz CY7C1321KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1163KV18/CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original     		PDF CY7C1163KV18/CY7C1165KV18 18-Mbit 550-MHz CY7C1165KV18

    Untitled

    Abstract: No abstract text available
    Text:  CY7C1143KV18/CY7C1145KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original     		PDF CY7C1143KV18/CY7C1145KV18 18-Mbit 450-MHz CY7C1145KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 36-Mbit density 2 M x 18, 1 M × 36 CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth


    Original     		PDF CY7C1423KV18/CY7C1424KV18 36-Mbit CY7C1423KV18 CY7C1424KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.0 cycles:


    Original     		PDF CY7C1548KV18/CY7C1550KV18 72-Mbit 450-MHz CY7C1548KV18 CY7C1550KV18

    CY7C1620KV18-250BZXC

    Abstract: No abstract text available
    Text: CY7C1618KV18, CY7C1620KV18 144-Mbit DDR II SRAM Two-Word Burst Architecture 144-Mbit DDR II SRAM Two-Word Burst Architecture Features Configuration • 144-Mbit density 8 M x 18, 8 M × 36 CY7C1618KV18 – 8 M × 18 ■ 333 MHz clock for high bandwidth


    Original     		PDF CY7C1618KV18, CY7C1620KV18 144-Mbit CY7C1618KV18 CY7C1620KV18-250BZXC

    Untitled

    Abstract: No abstract text available
    Text: CY7C2168KV18/CY7C2170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36)


    Original     		PDF CY7C2168KV18/CY7C2170KV18 18-Mbit 550-MHz CY7C2168KV18 CY7C2170KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1243KV18/CY7C1245KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions


    Original     		PDF CY7C1243KV18/CY7C1245KV18 36-Mbit CY7C1245KV18

    CY7C1382DV33-200BZI

    Abstract: No abstract text available
    Text: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation


    Original     		PDF CY7C1380DV33 CY7C1382DV33 18-Mbit CY7C1380DV33/CY7C1382DV33 CY7C1382DV33-200BZI

    CY7C1570KV18

    Abstract: No abstract text available
    Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:


    Original     		PDF CY7C1568KV18/CY7C1570KV18 72-Mbit CY7C1568KV18 CY7C1570KV18 CY7C1570KV18