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    15N60 Search Results

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    15N60 Price and Stock

    STMicroelectronics STL15N60M2-EP

    MOSFET N-CH 600V 7A POWERFLAT HV
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    DigiKey STL15N60M2-EP Digi-Reel 2,820 1
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    STL15N60M2-EP Cut Tape 2,820 1
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    STMicroelectronics STL15N60M2-EP 1
    • 1 $2.2
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    Avnet Silica STL15N60M2-EP 17 Weeks 3,000
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    Infineon Technologies AG IKB15N60TATMA1

    IGBT TRENCH FS 600V 30A TO263-3
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    DigiKey IKB15N60TATMA1 Digi-Reel 1,559 1
    • 1 $3.02
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    IKB15N60TATMA1 Cut Tape 1,559 1
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    IKB15N60TATMA1 Reel 1,000 1,000
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    Newark IKB15N60TATMA1 Cut Tape 1
    • 1 $3.3
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    TME IKB15N60TATMA1 833 1
    • 1 $2.83
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    Chip1Stop IKB15N60TATMA1 Cut Tape 1,000
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    EBV Elektronik IKB15N60TATMA1 20 Weeks 1,000
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    STMicroelectronics STF15N60M2-EP

    MOSFET N-CH 600V 11A TO220FP
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    DigiKey STF15N60M2-EP Tube 1,550 1
    • 1 $2.63
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    Avnet Americas STF15N60M2-EP Tube 1,000
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    STMicroelectronics STF15N60M2-EP 1,968 1
    • 1 $1.25
    • 10 $0.89
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    Avnet Silica STF15N60M2-EP 17 Weeks 50
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    Chip1Stop STF15N60M2-EP Tube 40
    • 1 $1.05
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    EBV Elektronik STF15N60M2-EP 17 Weeks 50
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    Infineon Technologies AG IGB15N60TATMA1

    IGBT TRENCH 600V 30A TO263-3
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    DigiKey IGB15N60TATMA1 Digi-Reel 1,371 1
    • 1 $2.44
    • 10 $1.567
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    IGB15N60TATMA1 Cut Tape 1,371 1
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    IGB15N60TATMA1 Reel 1,000 1,000
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    Avnet Americas IGB15N60TATMA1 Reel 19 Weeks 1,000
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    Mouser Electronics IGB15N60TATMA1 1,526
    • 1 $1.64
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    TME IGB15N60TATMA1 1
    • 1 $1.92
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    Chip1Stop IGB15N60TATMA1 Cut Tape 1,000
    • 1 $1.75
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    EBV Elektronik IGB15N60TATMA1 20 Weeks 1,000
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    Vishay Siliconix SIHA15N60E-GE3

    N-CHANNEL 600V
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    DigiKey SIHA15N60E-GE3 Reel 1,000 1,000
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    15N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873

    15N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original
    PDF 15N60 O-247 15N60 O-220F1 QW-R502-485

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


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    PDF 15N60C5 ISOPLUS220TM E72873

    20N60

    Abstract: 15N60 K 15N60 20n60 to-247
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A IDM TC = 25°C, pulse width limited by TJM


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    PDF 15N60 20N60 20N60 O-247 O-204 100ms K 15N60 20n60 to-247

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original
    PDF 15N60 15N60 O-247 O-220F1 QW-R502-485

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


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    PDF 15N60 15N60

    20n60

    Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A


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    PDF 15N60 20N60 20n60 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 20090209b

    DSA008959

    Abstract: 15N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original
    PDF 15N60 O-247 15N60 O-220F1 QW-R502-485 DSA008959

    15N60

    Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20


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    PDF 15N60 20N60 15N60 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 20090209b GS54

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 GS54

    15N60

    Abstract: 15N60C5 E72873 15n60c
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A


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    PDF 15N60 20N60

    15N60CFD

    Abstract: JESD22 SPP15N60CFD D134 15n60c
    Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability


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    PDF SPP15N60CFD PG-TO220 15N60CFD 15N60CFD JESD22 SPP15N60CFD D134 15n60c

    15N60CFD

    Abstract: 15N60 JESD22 SPW15N60CFD D134
    Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated


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    PDF SPW15N60CFD PG-TO247 15N60CFD 009-134-A O-247 PG-TO247-3 15N60CFD 15N60 JESD22 SPW15N60CFD D134

    20N60

    Abstract: 15N60 K 15N60 15n60 TO-247 20n60 G
    Text: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


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    PDF 15N60 20N60 O-204 O-247 O-204 O-247 20N60 15N60 K 15N60 15n60 TO-247 20n60 G

    20N60

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient


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    PDF 20N60 15N60 O-247 O-204 O-204 O-247 20N60

    Untitled

    Abstract: No abstract text available
    Text: h IXYS v HiPerFET Power MOSFETs " IXFH/15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15


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    PDF IXFH/IXFM15N60 15N60 20N60 20N60 O-247 O-204

    IXYS CS 2-12

    Abstract: No abstract text available
    Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


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    PDF 15N60 20N60 O-247 IXYS CS 2-12

    20n60 to-247

    Abstract: 20N60 20N60D 91526E
    Text: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous


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    PDF 15N60 20N60 Cto150 20N60 O-247 20n60 to-247 20N60D 91526E

    15N60

    Abstract: K 15N60
    Text: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A 15N60


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    PDF SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60

    15N60

    Abstract: IXTM15N60
    Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs 15N60, 55 15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 15N60 15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r


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    PDF 4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS