15MAY01 Search Results

Contextual Info: DRAWI NG THIS MADE D RA WI NG G IN IS 4 THIRD ANGLE UNPUBLISHED. COPYRIGHT 19 RELEASED BY ANP FOR 2 3 PROJECTION PUBLICATION INCORPORATED. ALL INTERNATIONAL RI GHTS D I ST LOC ,19 G RESERVED. 86 REV I 5 I GN 5 p F ZONE LTR DESCRIPTION PER 0G 3A-0334-01 15MAY01

Contextual Info: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER

VSR144

Contextual Info: VSR144 Vishay Foil Resistors Bulk Metal Foil Technology Industrial Grade Miniature Voltage Divider FEATURES • Temperature Coefficient of Resistance: Nominal TCR: ± 4ppm/°C 0° to 60°C Product is pictured larger than actual size to show detail • TCR Tracking: 1.5ppm/°C

SM73228XG1JHBGO

Abstract: 80 pin simm flash programmer FF000000 hyperterminal MSC8101ADS LH28F016SCT-L95 MSC8101 SC100 SC140
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2157/D Rev. 3, 05/2002 Freescale Semiconductor, Inc. Programming the MSC8101ADS Flash Memory Donald Simon and Duberly Mazuelos CONTENTS 1 2 3 4 References . 1 Background . 2

DR314

Abstract: 1494V
Contextual Info: 4 DRAWING THIS MADE IN THIRD DRAWI NG 0 ANGLE IS UNPUBLISHED. COPYRIGHT 19 2 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS D I ST Ah RESERVED. 50 REV I 5 I ONS P F ZONE LTR DESCR I P T I O N c TAB D .522 TOTAL

Contextual Info: VSM42, 45, 46 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks in Gull Wing Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product

Contextual Info: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064A x16 DATA BITS – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE

M58LV064A

Abstract: M58LV064B TSOP56 TBGA64
Contextual Info: M58LV064A M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply

SM73228XG1JHBGO

Abstract: LH28F016SCT-L95 MSC8101 MSC8101ADS SC100 SC140 80 pin simm flash programmer 0xFF840000-0xFF87FFFF LH28F016SCT-L
Contextual Info: Application Note AN2157/D Rev. 3, 05/2002 Programming the MSC8101ADS Flash Memory Donald Simon and Duberly Mazuelos CONTENTS 1 2 3 4 References . 1 Background . 2 Flash Memory . 2 Generating an S-record

Contextual Info: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER

Contextual Info: M58LV064A, M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply

M58LV064A

Abstract: M58LV064B M58LW064 M58LW064A M58LW064B TSOP56
Contextual Info: M58LW064A, M58LW064B M58LV064A, M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064/M58LV064A: x16 – M58LW064/M58LV064B: x16/x32

Contextual Info: 4 T H IS CO P YR IG H T 20 2 3 DRAW ING IS U N PU B LISH E D , RELEASED B Y T Y C D E L E C T R O N IC S CD RPDRATIDN . FD R P U B LIC A T IO N 20 LIHC A L L RIG H TS R E S E R V E D , D IST REVISIONS E LTR D E S C R IP T IO N B1 D DIM D ATE DWN EBOO—017 0—01

K6X8008T2B-UF55

Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

MHL9128

Contextual Info: MOTOROLA MHL9128 The RF Line UHF Linear Amplifier LIFETIME BUY Designed specifically for linear amplifier applications in the cellular frequency band. Internal DC blocking on RF ports reduces external component count and related circuit area. This device can be easily combined for higher power

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 53 R E V IS IO N S LTR B1 DESCRIPTION DATE DWN BSV GSR 0 7 JU L06 ECO—0 6 —013672 TM 1. MATES WITH APPROPRIATE UNIVERSAL M ATE-N-LO K

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O R Y R I G HT 2001 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 2001 PUBLICATION RIGHTS LOC RESERVED. REV I S I O N S D I ST A LTR DESCRIPTION DWN DATE E1 E G 0 0 - 2 6 9 5 - 0 1 290CT01 E2 E G 0 0 - 3 6 A 7 - 0 1 10DEC01

Contextual Info: INTEGRATED CIRCUITS CBT3245 Octal bus switch Product specification Supersedes data of 1998 Dec 8 Philips Semiconductors 2000 Jun 19 Philips Semiconductors Product specification Octal bus switch CBT3245 FEATURES DESCRIPTION • Standard ’245-type pinout • 5 Ω switch connection between two ports