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    156O Price and Stock

    Altech Corporation 156.OA02.2433C

    RELAY SAFETY 6PST 10A 24V
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    DigiKey 156.OA02.2433C Bulk 10 1
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    Verical 156.OA02.2433C 3 1
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    Newark 156.OA02.2433C Bulk 1
    • 1 $162.27
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    RS 156.OA02.2433C Bulk 6 Weeks 1
    • 1 $147.4
    • 10 $140.03
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    Master Electronics 156.OA02.2433C 4
    • 1 $127.81
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    TestEquity LLC 156.OA02.2433C
    • 1 $109.82
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    Mercury Electronic Ind Co Ltd 3QHTF22-51.156-OE

    51.156 MHz XO 3.3V 2.5X2.0 MM OE
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    DigiKey 3QHTF22-51.156-OE 5
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    Mercury Electronic Ind Co Ltd 18QHTF53-51.156-OE

    51.156 MHz XO 1.8V 5.0X3.2 MM OE
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    DigiKey 18QHTF53-51.156-OE 5
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    Mercury Electronic Ind Co Ltd 25QHTF53-51.156-OE

    51.156 MHz XO 2.5V 5.0X3.2 MM OE
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    DigiKey 25QHTF53-51.156-OE 5
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    Mercury Electronic Ind Co Ltd 3QHTF21-19.2156-OE

    19.2156 MHz XO 3.3V 2.0X1.6MM OE
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    DigiKey 3QHTF21-19.2156-OE 5
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    156O Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    156.OA01.1222C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 12V Original PDF
    156.OA01.1231C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 12V Original PDF
    156.OA01.2422C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 24V Original PDF
    156.OA01.2431C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 24V Original PDF
    156.OA02.1224C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V Original PDF
    156.OA02.1233C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V Original PDF
    156.OA02.1242C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V Original PDF
    156.OA02.2424C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V Original PDF
    156.OA02.2433C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V Original PDF
    156.OA02.2442C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V Original PDF
    156.OA11.1222C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 12V Original PDF
    156.OA11.1231C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 12V Original PDF
    156.OA11.2422C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 24V Original PDF
    156.OA11.2431C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 24V Original PDF
    156.OA12.1224C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V Original PDF
    156.OA12.1233C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V Original PDF
    156.OA12.1242C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V Original PDF
    156.OA12.2424C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V Original PDF
    156.OA12.2433C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V Original PDF
    156.OA12.2442C Altech Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V Original PDF

    156O Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDC2512

    608Z

    Abstract: FDC608PZ marking 58a SuperSOT -6
    Text: tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC608PZ 608Z FDC608PZ marking 58a SuperSOT -6

    Si3445DV

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3445DV

    Untitled

    Abstract: No abstract text available
    Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDH8520C

    RL76

    Abstract: ICL7662 Harris 7218 lCL7662 ICL7662MT INVERTER 10kW 7662 Harris A051 ICL7662IPA ICL7662CBD
    Text: ICL7662 S E M I C O N D U C T O R CMOS Voltage Converter April 1994 Features Description • No External Diode Needed Over Entire Temperature Range The Harris ICL7662 is a monolithic high-voltage CMOS power supply circuit which offers unique performance advantages over previously available devices. The ICL7662


    Original     		PDF ICL7662 ICL7662 ICL76 ICL7662, ICL7611 ICL8069 RL76 Harris 7218 lCL7662 ICL7662MT INVERTER 10kW 7662 Harris A051 ICL7662IPA ICL7662CBD

    FDR8321L

    Abstract: SOIC-16 n-channel 2.5v mosfet
    Text: August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS ON = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. This device is designed for configuration as a load


    Original     		PDF FDR8321L OT-23 FDR8321L SOIC-16 n-channel 2.5v mosfet

    NDH8520C

    Abstract: No abstract text available
    Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDH8520C NDH8520C

    Untitled

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3445DV

    Untitled

    Abstract: No abstract text available
    Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC640P FDC640P NF073

    FDC633N marking convention

    Abstract: No abstract text available
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N NF073 FDC633N marking convention

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF Si3456DV NF073 NF073

    marking 606

    Abstract: diode marking EY
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P FDC606P NF073 marking 606 diode marking EY

    Marking 638

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC638P FDC638P NF073 Marking 638

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8321C
    Text: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDH8321C CBVK741B019 F63TNR F852 FDR835N NDH8321C

    RSM5853P

    Abstract: SURFACE MOUNT schottky diode application 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: E L E C T R O N I C RSM5853P P-Channel 20Volt D-S MOSFET With Schottky Diode □ Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEW process to provide low RDS(on) and to provide low RDS(on) and to ensure


    Original     		PDF RSM5853P 20Volt leadfr100 RSM5853P SURFACE MOUNT schottky diode application 5V GATE TO SOURCE VOLTAGE MOSFET

    8212c

    Abstract: ICL8211 ICL8211 an027 ICL8211CPA REGULATOR IC 8212 27C zener ICL8211CBA ICL8211CTY LM199 ICL8212
    Text: ICL8211, ICL8212 S E M I C O N D U C T O R Programmable Voltage Detectors April 1994 Features Description • High Accuracy Voltage Sensing and Generation The Harris ICL8211/8212 are micropower bipolar monolithic integrated circuits intended primarily for precise voltage


    Original     		PDF ICL8211, ICL8212 ICL8211/8212 ICL8211 8212c ICL8211 ICL8211 an027 ICL8211CPA REGULATOR IC 8212 27C zener ICL8211CBA ICL8211CTY LM199 ICL8212

    Untitled

    Abstract: No abstract text available
    Text: FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDC645N

    CBVK741B019

    Abstract: F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    SOIC-16

    Abstract: FDC654P
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDC654P OT-23 FDC654P SOIC-16

    CBVK741B019

    Abstract: F63TNR FDC633N FDC642P
    Text: FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for


    Original     		PDF FDC642P CBVK741B019 F63TNR FDC633N FDC642P

    CBVK741B019

    Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
    Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDH8520C CBVK741B019 F63TNR F852 NDH8520C 28A-600 diode tnr

    Single P-Channel, Logic Level, PowerTrench MOSFET

    Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
    Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.


    Original     		PDF FDR8308P Single P-Channel, Logic Level, PowerTrench MOSFET P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: FORM 4 .0 4 - 0 0 1 B LTR REVISION DATE RELEASED APPD 0 5 -2 4 -1 0 01.040 1.885±.01 0 [47.88±0.25] 0.590 [14.99] RoHS COMPLIANT 20 02 /95 /E C NOTES: REVISION NOTIFICATION 1. LENS MATERIAL: CLEAR, LEXAN OR POLYCARBONATE I 2. SLEEVE MATERIAL: POLYCARBONATE


    OCR Scan     		PDF 156-O -014V CW-014V 14VDC