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    t-Global Technology PC94-150X150X2.0

    Thermal Pad, 2Mm, 4W/M.k, Red; Thickness:2Mm; Conductive Material:-; Thermal Conductivity:4W/M.k; Thermal Impedance:-; Volume Resistivity:-; External Length:150Mm; External Width:150Mm; Product Range:-; Svhc:No Svhc (15- Rohs Compliant: Yes |T Global PC94-150X150X2.0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PC94-150X150X2.0 Bulk 17 1
    • 1 $73.74
    • 10 $65.63
    • 100 $54.4
    • 1000 $54.4
    • 10000 $54.4
    		Buy Now

    t-Global Technology PC93-150X150X2.0

    Thermal Pad, 2Mm, 2W/M.k, Grey; Thickness:2Mm; Conductive Material:-; Thermal Conductivity:2W/M.k; Thermal Impedance:-; Volume Resistivity:-; External Length:150Mm; External Width:150Mm; Product Range:-; Svhc:No Svhc (15 Rohs Compliant: Yes |T Global PC93-150X150X2.0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PC93-150X150X2.0 Bulk 6 1
    • 1 $52.79
    • 10 $46.49
    • 100 $38.95
    • 1000 $38.95
    • 10000 $38.95
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    150X150X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR20005

    Abstract: STR20000 Series RU3M STR20000 sanken str 45
    Text: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability


    Original     		PDF STR20000 STR20005 STR20005 STR20000 Series RU3M sanken str 45

    STR2012

    Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
    Text: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability


    Original     		PDF STR2000 STR2005 STR2012 STR2013 STR2015 STR2024 STR2024 Sanken str2012 str2000 series sanken STR2005 Sanken str2015

    2SA1668

    Abstract: 2SA1667 equivalent for 2sa1668 FM20
    Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min


    Original     		PDF 2SA1667/1668 2SC4381/4382) 10max 150min 200min 60min 20typ 60typ 2SA1668 2SA1667 equivalent for 2sa1668 FM20

    2SD2141

    Abstract: 2SD2141 equivalent FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


    Original     		PDF 2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 150x150x2 100x100x2 2SD2141 2SD2141 equivalent FM20 DMS-10

    2SA1488

    Abstract: 2SA1488A FM20 2SC3851 A DSA0016503
    Text: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80


    Original     		PDF 2SA1488/1488A 2SC3851/A) 100max 60min 80min 40min 15typ 90typ O220F) 2SA1488 2SA1488 2SA1488A FM20 2SC3851 A DSA0016503

    Untitled

    Abstract: No abstract text available
    Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz


    Original     		PDF 2SC2023 300min 30min 10typ 75typ MT-25 150x150x2 100x100x2 50x50x2

    2SA1667

    Abstract: 2SA1668 FM20 22SA1
    Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)


    Original     		PDF 2SA1667/1668 2SC4381/4382) 2SA1667 2SA1668 10max O220F) 2SA1667 2SA1668 FM20 22SA1

    2sc4024

    Abstract: VEBO-15V M.P transistor FM20
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA


    Original     		PDF 2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 2sc4024 VEBO-15V M.P transistor FM20

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20

    2SD2141 equivalent

    Abstract: 2SD2141 FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


    Original     		PDF 2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 120mA 2SD2141 equivalent 2SD2141 FM20 DMS-10

    2SC4153

    Abstract: 2SC4153 equivalent FM20 100X100X2
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


    Original     		PDF 2SC4153 120min 30typ 110typ ulse14) 100max O220F) 50x50x2 2SC4153 2SC4153 equivalent FM20 100X100X2

    Untitled

    Abstract: No abstract text available
    Text: 10/08 PADA ENGINEERING S.r.l. Via G.B. Pirelli 11 I – 61030 Saltara PU - Italy Tel. +39 0721 899555 Fax +39 0721 897064 Email: pada@pada.it Web: www.pada.it SuperPlate SuperPlate: an efficient way to manage complex electronic systems having high concentrated


    Original     		PDF 145x25/280mm

    Untitled

    Abstract: No abstract text available
    Text: 多口継手 鉛カドミウムの含有量を 削減した溶融亜鉛めっき 技術を開発 ¬ 印 管継手 ねじ接続による中小口径鋼管用の管継手で、JIS B 2301に「ねじ込み式可鍛鋳鉄製管継手」として規定 されている継手です。JIS規格外品も一部製造しております。


    Original     		PDF HL-K100-AC

    Untitled

    Abstract: No abstract text available
    Text: カタログ シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 適用管種：JIS G 3452 配管用炭素鋼鋼管 JIS G 3442 水配管用亜鉛めっき鋼管


    Original     		PDF HL-K257-

    2SB1257

    Abstract: 2SD2014 FM20 nk co DSA0016505
    Text: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max


    Original     		PDF 2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 50x50x2 2SB1257 2SD2014 FM20 nk co DSA0016505

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


    Original     		PDF 2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 85typ 2SC4495 FM20

    2SC4153

    Abstract: FM20
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


    Original     		PDF 2SC4153 120min 30typ 110typ 100x100x2 150x150x2 50x50x2 2SC4153 FM20

    2SD2014

    Abstract: 2SB1257 FM20 S8010
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010

    2SD2015

    Abstract: FM20
    Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C


    Original     		PDF 2SD2015 120min 2000min 40typ 10max O220F) 2SD2015 FM20

    sk a 3120c

    Abstract: 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A
    Text: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the


    Original     		PDF responsib82-2-714-3700 H1-I01EC0-9909040ND sk a 3120c 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A

    IC SI-8050S 5V 3A

    Abstract: sk 3090c sk 8050S sk a 3120c A8180 SI-3242P toroidal transformer 22v td 3001N 3522V 3922v
    Text: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the


    Original     		PDF

    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


    OCR Scan     		PDF 06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes

    2SD234

    Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
    Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t


    OCR Scan     		PDF 2so234 2sd235 2SB434, ZSB434 2SB435. 2SD234 220AB 2SD235 2SD235 Toshiba SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4

    2SD553

    Abstract: Toshiba 2sd553
    Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.


    OCR Scan     		PDF 2SD553 2SB553. 2-10A1A O-220AB 2SD553 Toshiba 2sd553