ta9192
Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Text: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,
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O205AF)
RFL4N12,
RFL4N15
25BVDSS
AN7254
AN7260.
ta9192
TA919
AN7260
RFL4N12
RFL4N15
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PDF
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AN7254
Abstract: AN7260 RFP2N12 RFP2N15 TB334
Text: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,
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O220AB)
RFP2N12,
RFP2N15
AN7254
AN7260
RFP2N12
RFP2N15
TB334
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PDF
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
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PDF
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AN7254
Abstract: AN7260 RFL1N12L RFL1N15L
Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,
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O205AF)
RFL1N12L,
RFL1N15L
RFL1N12L
O-205AF
AN7254
AN7260.
AN7260
RFL1N12L
RFL1N15L
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PDF
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FZT855Ta
Abstract: fzt855
Text: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V IC = 5A high Continuous Collector Current Case Material: Molded Plastic. “Green” Molding Compound.
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FZT855
OT223
110mV
FZT955
AEC-Q101
OT223
J-STD-020
DS33176
FZT855Ta
fzt855
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
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PDF
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IRF5NJ6215
Abstract: 75vds p mosfet
Text: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ6215
-150V
-150V,
IRF5NJ6215
75vds p mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT625 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 150V Maximum Continuous Collector Current IC = 1A 625mW Power dissipation
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FMMT625
625mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33237
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PDF
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IRF232
Abstract: IRF230 IRF231 IRF233 TB334
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
IRF232
IRF230
IRF231
IRF233
TB334
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PDF
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RFL1N15
Abstract: AN7254 AN7260 RFL1N12 TB334
Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
RFL1N15
AN7260
RFL1N12
TB334
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PDF
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irf9230
Abstract: IRF9231 IRF9232 IRF9233 TB334
Text: IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
-200V
irf9230
IRF9231
IRF9232
IRF9233
TB334
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PDF
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IRF220
Abstract: IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220
Text: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF220,
IRF221,
IRF222,
IRF223
IRF220
IRF223
irf2210
IRF221
IRF222
TB334
MOSFET IRF220
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PDF
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marking N95
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX495 150V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 150V IC = 1A high Continuous Current Case Material: Molded Plastic, “Green” Molding Compound Low saturation voltage VCE sat < 300mV @ 0.5A
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FCX495
300mV
AEC-Q101
J-STD-020
MIL-STD-202,
FCX495
DS33057
marking N95
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PDF
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fzt 655
Abstract: FZT655 FZT755 DS33151 FZT655TA
Text: A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V IC = 1A high Continuous Current Low Saturation Voltage Complementary PNP Type – FZT755
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FZT655
OT223
FZT755
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
DS33151
fzt 655
FZT655
FZT655TA
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT625 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO = 150V IC = 1A 625mW Power dissipation Low Equivalent On Resistance Low Saturation Voltage
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FMMT625
625mW
OT-23
J-STD-020
DS33237
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94268 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y3315CM 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3315CM 150V RDS(on) 0.085Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRF5Y3315CM
O-257AA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4286A
O-254AA)
IRF5M3415
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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PDF
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IRF5NJ3315
Abstract: No abstract text available
Text: PD - 94287 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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IRF5NJ3315
IRF5NJ3315
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PDF
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IRF5NJ3315
Abstract: No abstract text available
Text: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94287B
IRF5NJ3315
IRF5NJ3315
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PDF
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Untitled
Abstract: No abstract text available
Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
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PDF
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Untitled
Abstract: No abstract text available
Text: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFP2N12,
RFP2N15
TA09196.
RFP2N12
TB334
AN7254
AN7260
RFP2N15
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PDF
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ta9192
Abstract: No abstract text available
Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFL4N12,
RFL4N15
TA9192.
AN7254
AN7260.
ta9192
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PDF
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