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Infineon Technologies AG IAUT150N10S5N035ATMA1 MOSFET N-CH 100V 150A 8HSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IAUT150N10S5N035ATMA1	Cut Tape	5,660		1	1 $3.31 10 $2.377 100 $3.31 1000 $1.29499 10000 $1.29499	Buy Now
	IAUT150N10S5N035ATMA1	Digi-Reel	5,660		1	1 $3.31 10 $2.377 100 $3.31 1000 $1.29499 10000 $1.29499	Buy Now
	IAUT150N10S5N035ATMA1	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $1.27525	Buy Now
Mouser Electronics	IAUT150N10S5N035ATMA1		8,467			1 $3.12 10 $2.31 100 $1.66 1000 $1.3 10000 $1.27	Buy Now
Rochester Electronics	IAUT150N10S5N035ATMA1		22,361		1	1 $1.42 10 $1.42 100 $1.33 1000 $1.21 10000 $1.21	Buy Now
Chip One Stop	IAUT150N10S5N035ATMA1	Cut Tape	1,936	0 Weeks, 1 Days	1	1 $2.73 10 $1.95 100 $1.46 1000 $1.46 10000 $1.34	Buy Now
New Advantage Corporation	IAUT150N10S5N035ATMA1		2,000		1	1 - 10 - 100 - 1000 - 10000 $2.02	Buy Now

Vyrian	IAUT150N10S5N035ATMA1		8,490			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FDI150N10 MOSFET N-CH 100V 57A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDI150N10	Tube	3,026		1	1 $3.53 10 $3.53 100 $3.53 1000 $1.22188 10000 $1.19213	Buy Now
Mouser Electronics	FDI150N10		356			1 $3.24 10 $2.72 100 $1.61 1000 $1.19 10000 $1.19	Buy Now
Richardson RFPD	FDI150N10				800	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Buy Now
Avnet Silica	FDI150N10			8 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDI150N10			9 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	FDI150N10		6,970			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STP150N10F7 MOSFET N-CH 100V 110A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP150N10F7	Tube	1,405		1	1 $3.11 10 $3.11 100 $3.11 1000 $1.29135 10000 $1.21025	Buy Now
Avnet Americas	STP150N10F7	Bulk		15 Weeks	1	1 $3.01 10 $1.88 100 $1.8 1000 $1.8 10000 $1.8	Buy Now
	STP150N10F7	Tube		26 Weeks	1,000	1 - 10 - 100 - 1000 $1.22557 10000 $1.15262	Buy Now
Mouser Electronics	STP150N10F7		1,715			1 $2.79 10 $1.59 100 $1.57 1000 $1.29 10000 $1.21	Buy Now
Newark	STP150N10F7	Bulk	1		1	1 $0.464 10 $0.464 100 $0.464 1000 $0.464 10000 $0.464	Buy Now
STMicroelectronics	STP150N10F7		1,715		1	1 $2.73 10 $1.56 100 $1.54 1000 $1.4 10000 $1.4	Buy Now

TME	STP150N10F7		86		1	1 $2.98 10 $2.68 100 $2.12 1000 $1.98 10000 $1.98	Buy Now
Avnet Silica	STP150N10F7		600	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP150N10F7			27 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	STP150N10F7		5,856			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	STP150N10F7		65,000			1 - 10 - 100 $0.982 1000 $0.7603 10000 $0.7603	Buy Now
Wuhan P&S	STP150N10F7		10,000		1	1 $1.1 10 $1.1 100 $1.1 1000 $1.1 10000 $1.1	Buy Now
onsemi FDP150N10 MOSFET N-CH 100V 57A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP150N10	Tube	926		1	1 $2.79 10 $2.79 100 $2.79 1000 $1.1323 10000 $1.09113	Buy Now
Avnet Americas	FDP150N10	Tube		9 Weeks	800	1 - 10 - 100 - 1000 $1.06451 10000 $1.02694	Buy Now
Mouser Electronics	FDP150N10		783			1 $2.74 10 $1.45 100 $1.35 1000 $1.09 10000 $1.09	Buy Now
Richardson RFPD	FDP150N10				800	1 - 10 - 100 - 1000 $1.09 10000 $1.09	Buy Now
Avnet Silica	FDP150N10			10 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FDP150N10			11 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FDB150N10 MOSFET N-CH 100V 57A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB150N10	Cut Tape	431		1	1 $4.63 10 $3.111 100 $4.63 1000 $4.63 10000 $4.63	Buy Now
	FDB150N10	Digi-Reel	431		1	1 $4.63 10 $3.111 100 $4.63 1000 $4.63 10000 $4.63	Buy Now
Mouser Electronics	FDB150N10		633			1 $4.4 10 $3.16 100 $2.25 1000 $1.78 10000 $1.78	Buy Now
Rochester Electronics	FDB150N10		241		1	1 $1.99 10 $1.99 100 $1.87 1000 $1.69 10000 $1.69	Buy Now
Richardson RFPD	FDB150N10				800	1 - 10 - 100 - 1000 $1.79 10000 $1.79	Buy Now
Avnet Silica	FDB150N10			11 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FDB150N10			12 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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150N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
150N15 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 150N15	PDF
Tf 227 Abstract: No abstract text available Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM	Original	150N15 OT-227 Tf 227	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 150N15 247TM	PDF
150N15 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150	Original	O-264 150N15 150N15	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	150N15P O-247	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	150N15P O-247	PDF
150N15P Abstract: 150n15 IXTQ150N15P 2709V Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	150N15P O-264 150N15P 150n15 IXTQ150N15P 2709V	PDF
Untitled Abstract: No abstract text available Text: IXYS VDSS HiPerFET Power MOSFETs IXFK100N10 IXFN 150N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D ^025 DS on 100 V 100 A 12 mQ 100 V 150 A 12 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN vDSS	OCR Scan	IXFK00N10 IXFN150N10 O-264 to150 OT-227 E153432	PDF
150N15 Abstract: No abstract text available Text: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150	Original	O-264 150N15 150N15	PDF
150N15 Abstract: fast IXFX Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150	Original	150N15 150N15 fast IXFX	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 150N15 247TM E153432	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	150N15P O-264	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30	Original	150N15 OT-227	PDF
150N15 Abstract: E 150N10 150N10 9100pF Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20	Original	150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF	PDF

IXFH 150N15P Abstract: 150n15 150N15P 2709V Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	150N15P O-247 IXFH 150N15P 150n15 150N15P 2709V	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V VGS VGSM	Original	150N15 OT-227 E153432	PDF
100N120 Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352 Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50	Original	15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352	PDF
E 150N10 Abstract: 150N10 100N10 IXFK100N10 IXFN150N10 Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C	Original	IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10	PDF
Untitled Abstract: No abstract text available Text: 150N10F7, 150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.0042 Ω 150N10F7 ID PTOT 110 A 250 W 150N10F7	Original	STI150N10F7, STP150N10F7 O-220 STI150N10F7 O-220 DocID024552	PDF
SKIIP 33 nec 125 t2 Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.	Original	734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302	PDF
0405B Abstract: 0581B NE5539D NE5539F NE5539N SE5539F Text: Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and	OCR Scan	NE/SE5539 350MHz 48MHz 7110fl2b NE/SE5539 500nH-VW 2-20pF 711002b 0405B 0581B NE5539D NE5539F NE5539N SE5539F	PDF
150N10 Abstract: No abstract text available Text: HiPerFET Power MOSFETs IXFK 100 N10 IXFN 150 N10 V DSS ^025 100 V 100 V 100 A 150 A D DS on 12 mQ 12 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Voss T, = 25 °C tO l50°C 100 100 V Voen T, = 25°C to 150°C; RGS = 1 M£2	OCR Scan	IXFK100N10 IXFN150N10 O-264 OT-227 E153432 IXFK10QN40 150N10	PDF
Diode D25 N10 R Abstract: Diode D25 N10 P Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK	OCR Scan	IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF

150N1 Search Results

150N1 Price and Stock

Infineon Technologies AG IAUT150N10S5N035ATMA1

onsemi FDI150N10

STMicroelectronics STP150N10F7

onsemi FDP150N10

onsemi FDB150N10

150N1 Datasheets Context Search

150N15

Tf 227

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150N15

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150N15P

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150N15

150N15

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150N15

IXFH 150N15P

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100N120

E 150N10

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SKIIP 33 nec 125 t2

0405B

150N10

Diode D25 N10 R

IXTD08N100P-1A