1506B Search Results

TCM1506A

Contextual Info: TC M 1531, TC M 1532, TC M 1536, TC M 1539 TC M 1501B, TC M 1506B, TCM 1512B TELEPHONE TONE RINGER DRIVERS Electronic Replacement for Electromechanical Telephone Bell When Used with Transducer

1002 SCR

Abstract: FI2522 1002 ringer
Contextual Info: TCM 1501B, TCM 1506B, TCM 1512B TCM 1531, TCM 1532, TCM 1536, TCM 1539 TELEPHONE TONE RINGER DRIVERS D2940 MARCH 1986-REVISED APRIL 1987 • Electronic Replacement for Electromechanical Telephone Bell When Used with Transducer • Designed to Meet or Exceed FCC Part 68

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: TCM1501B, 1506B, TCM1512B TCM1531, TCM1532, TCM1536, TCM1539 TELEPHONE TONE RINGER DRIVERS D2940 MARCH 1986-REVISED APRIL 1987 • ■ • Electronic Replacement for Electromechanical Telephone Bell When Used with Transducer ■ • I Designed to Meet or Exceed FCC Part 68

thyristor scr oscillator circuit

Abstract: 110v thyristor scr 501B 8 P TCM1539 TCM1501A TCM1501B TCM1506B TCM1512B TCM1531 TCM1532
Contextual Info: TC M 15 01B , 1506B, TC M 15 12B TC M 15 3 1, TCM1532, TCM1536, TCM1539 TELEP H O N E TON E RINGER DRIVERS D 2 9 4 0 M A R C H 1 9 8 6 - R E V I S E D A P R IL 1 9 8 7 • Electronic Replacement for Electromechanical Telephone Bell When Used with Transducer

1510UFB

Abstract: 1502B 1502FB 1502UFB 1506B 1506FB 1506UFB 1510B 1510FB
Contextual Info: 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 1502B - 1510B 1502FB - 1510FB 1502UFB - 1510UFB ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current @TC

dsep 2x91-03a

Abstract: DSEC 240-04A DSEP 2X31-12A dsep 12-12a 2x61-06A
Contextual Info: 3= J- HiPerFRED Diodes Kl V RRM '1f a v @ T1 c d=0.5 V ► N ew K3 DSEP. DSEE. lFAV = 8 - 2x120 A Type T ^FSM VF @ 10 ms m ax. A °C 45°C A V lF = 150°C A t rr ^RM @ - d i / d t typ- typ. TVJ=25 °C ns A T V, DSEC. ^VJM ^thJC DSEP 2x. o = 100°C

ATMEL smart card

Abstract: atmel 2000 1506B AT05SC3208R HC05
Contextual Info: Features AT05SC3208R Simulator Features • • • • • • • • • Cycle Accurate Instruction Set Simulation of the CPU AT05SC3208R Specific Modular Peripherals Developer Feedback via Status and Error Messages Custom Module Configuration I/O Interface to Smart Card Readers

181 OPTOCOUPLER

Abstract: 501B 8 P M.P Diode 2T203 bux diode TCM1539 phct IL0If 501B TCM1506B
Contextual Info: TIL101 OPTOCOUPLER SO OSOO2 D 2906 OCTOBER 1 9 8 5 - R E V IS E D M ARCH 1988 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio

Contextual Info: Features AT05SC3208R Simulator Features • • • • • • • • • Cycle Accurate Instruction Set Simulation of the CPU AT05SC3208R Specific Modular Peripherals Developer Feedback via Status and Error Messages Custom Module Configuration I/O Interface to Smart Card Readers

SKM100GB101D

Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
Contextual Info: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D

Contextual Info: DSEP15-06B HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips

Contextual Info: DSEP 15-06B HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 25 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06B A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 130°C; rectangular, d = 0.5

Contextual Info: TIL181 OPTOCOUPLER D 2 9 0 6 , OCTOBER 1 9 8 5 -R E V IS E D MARCH 1 98 8 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio

Contextual Info: DSEP 15-06B HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V = 25 ns trr with soft recovery Preliminary data VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06B A C TAB D4 A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS

Contextual Info: DSEP 15-06B HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 25 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06B A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 130°C; rectangular, d = 0.5

Contextual Info: DSEP 15-06B HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 25 ns with soft recovery VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 15-06B A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 130°C; rectangular, d = 0.5

Contextual Info: DSEP15-06BS HiPerFRED VRRM = 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06BS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips