14DBTYP Search Results

O10050

Contextual Info: 2.4GHz Band Chip 0 deg. Splitter / Combiner Model No. SLH-240 Equivalent Circuits r . N Shape & Size < - o '-0 H < k >f o_ >r _> o r J DO— ^ ©3 <D 30 -o© € © (D > > > m ® jg f o> in (Sum port @ Out-1 © 0ut-2 Ij, © © > © Ground

BASS mid TREBLE CIRCUIT

Abstract: M62413FP bass mid treble control circuit BB02
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M62413FP ELECTRONIC SOUND CONTROL WITH ELECTRONIC VOLUME FOR MULTIPLE SOURCES DESCRIPTION The M 6 2 41 3F P Integrated Circuit is developed for audio-visual equipment. It being used for controls sound in the power amplifier fro nt stage.

3SK129

Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Contextual Info: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘

3SK97

Abstract: 3SK122 3SK121 3SK125 3SK101 3SK114 3SK87 3SK102 3SK112 3SK113
Contextual Info: - s tí: € ffl iÊ m iS V* II K V Vg s * tt* B ÍL UH F RF MOS N DE 15 DS ±8 B ÍL VHF RF M OS N DE 15 D S ±8 3SK85 B ÍL V H F RF MOS N DE 22 DS ±8 3SK87 NEC U H F RF MOS N DE 20 D S ±10 3SK88 NEC U H F RF MOS N DE 20 D S ±10 A-Sff. C h o p MOS

Contextual Info: M irm O T METÄL 2.4GHz Band Chip 0 deg. Splitter I Combiner Model No. SLH-240 Equivalent Circuits Shape & Size < k î4 i » D In (Sum port \r v o _ _ m m /. @ Out-1 O) I*! (D *tr o a © Out-2 sa-. y (D(D(D •rr © <D Ground o > Com biners unit (mm)

AM-132

Abstract: AMC-132
Contextual Info: M / A- CO M/ M I C R O E L E C T R O N I C S bTE ]> • 5 b 4 S 1 6 3 □ a 0 0 cil5 057 * M A C O High Performance Amplifiers, 10 dB Gain 5-200 MHz AM-/AMC-132 ■ + 4 9 dBm Typical Midband Third Order Intercept ■ + 2 9 dBm Typical Midband 1 dB Compression

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M62413FP ELECTRONIC SOUND CONTROL WITH ELECTRONIC VOLUME FOR MULTIPLE SOURCES DESCRIPTION The M 62413F P Integrated Circuit is developed for audio-visual equipment. It being used for controls sound in the power amplifier front stage.

Contextual Info: an A M P com pany High Performance Amplifiers, 10 dB Gain 5 - 200 MHz AM-/AMC-132 V2.00 Features FP-8 • +49 dBm Typical Midband Third Order Intercept • +29 dBm Typical Midband 1 dB Compression 0.109 2.8 D IA THR U I 4 H O LE S / 0 312 MIN T Y P (7.9 MIN)

RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING

RF MOSFET

Abstract: MRF141G
Contextual Info: LPioaucti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies

mos 4069

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

RD04HMS2

Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING