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    140NS Search Results

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    140NS Price and Stock

    Texas Instruments SN74S140NS

    IC GATE NAND 2CH 4-INP 14SO
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    DigiKey SN74S140NS Tube 949 1
    • 1 $3.23
    • 10 $2.424
    • 100 $2.0007
    • 1000 $1.77877
    • 10000 $1.69001
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    Mouser Electronics SN74S140NS
    • 1 $3.23
    • 10 $2.11
    • 100 $2
    • 1000 $1.74
    • 10000 $1.67
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    Rochester Electronics SN74S140NS 11,752 1
    • 1 $1.75
    • 10 $1.75
    • 100 $1.65
    • 1000 $1.49
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    Microchip Technology Inc MCP73114-0NSI-MF

    IC BATT CONTRL LI-ION 1CEL 10DFN
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    DigiKey MCP73114-0NSI-MF Tube 869 1
    • 1 $1.51
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    ebm-papst G2E140-NS38-01

    FAN BLWR CENT 237X100MM 230VAC
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    DigiKey G2E140-NS38-01 Bulk 10 1
    • 1 $232.23
    • 10 $207.028
    • 100 $191.0252
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    Avnet Americas G2E140-NS38-01 Bulk 19 Weeks 10
    • 1 -
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    • 100 $186.732
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    Mouser Electronics G2E140-NS38-01 10
    • 1 $218.81
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    Newark G2E140-NS38-01 Bulk 10
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    RS G2E140-NS38-01 Bulk 12 Weeks 1
    • 1 $223.8
    • 10 $212.61
    • 100 $179.04
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    TME G2E140-NS38-01 1
    • 1 $188.81
    • 10 $157.34
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    Master Electronics G2E140-NS38-01 7
    • 1 $233.21
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    • 100 $190.04
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    Neutron USA G2E140-NS38-01 32
    • 1 $527.94
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    Sager G2E140-NS38-01 1
    • 1 $232.66
    • 10 $212.71
    • 100 $189.73
    • 1000 $189.73
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    Lumimax Optoelectronic Technology FM140-NS-H

    DIODE SCHOTTKY 40V 1A SOD323S
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    DigiKey FM140-NS-H Reel 10
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    • 10 $0.153
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    STMicroelectronics STY140NS10

    MOSFET N-CH 100V 140A MAX247
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    DigiKey STY140NS10 Tube 600
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    Bristol Electronics STY140NS10 2,188
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    ComSIT USA STY140NS10 150
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    140NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFK240N15T2

    Abstract: IXFX240N15T2 PLUS247
    Text: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    PDF IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247

    Mosfet 75V 120A

    Abstract: Power Mosfet 75V 120A IXFN240N15T2
    Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


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    PDF IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2

    ixfn420n10t

    Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
    Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


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    PDF IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16

    HCF4086B

    Abstract: HCF4086BEY HCF4086BM1 HCF4086M013TR
    Text: HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns Typ. at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS


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    PDF HCF4086B 140ns 100nA JESD13B HCF4086B HCF4086BEY HCF4086BEY HCF4086BM1 HCF4086M013TR

    byp303

    Abstract: C67047-A2253-A2 BYP 303
    Text: BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5


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    PDF 140ns O-218 C67047-A2253-A2 byp303 C67047-A2253-A2 BYP 303

    CD4076B

    Abstract: CD4086BMS IOH15
    Text: CD4086BMS CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate December 1992 Features Pinout • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns Typ. at 10V CD4086BMS TOP VIEW • High Voltage Type (20V Rating) A 1 • INHIBIT and ENABLE Inputs B 2 J = INH + ENABLE +


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    PDF CD4086BMS 140ns 100nA CD4076B CD4086BMS IOH15

    2SK2045

    Abstract: No abstract text available
    Text: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.


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    PDF ENN4287A 2SK2045 140ns) 2078B 2SK2045] O-220FI 2SK2045

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFN240N15T2 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions


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    PDF IXFN240N15T2 140ns OT-227 E153432 240N15T2

    IRS25411

    Abstract: SO8 NARROW 156V IRS2540 IRS254 irs25411pbf IRS25401
    Text: LIGHTING High-Voltage Buck Control ICs for Constant LED Current Regulation THE POWER MANAGEMENT LEADER Features: • Micropower Startup less than 500µA • ± 2% voltage reference • 140ns deadtime • PWM Dimmable • Free running frequency • 200V (IRS25401) and 600V (IRS25411)


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    PDF 140ns IRS25401) IRS25411) 500kHz IRS254 IRS25401SPbF IRS25401STRPbF IRS25411PbF IRS25411SPbF IRS25411 SO8 NARROW 156V IRS2540 irs25411pbf IRS25401

    2SK2045

    Abstract: 42871
    Text: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.


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    PDF ENN4287A 2SK2045 140ns) 2078B 2SK2045] O-220FI 2SK2045 42871

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    PDF IXFK220N17T2 IXFX220N17T2 140ns O-264 220N17T2

    10 GHz rf delay line

    Abstract: PN9000 Aeroflex PN9000 PN9240 PN9712 PN9711 rf delay line PN9710 PN9713 phase shifter
    Text: Tommorrow’s Phase Noise Testing Today PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DELAY LINE OPTIONS DELAY LINE DELAY LINE TO RF 50Ω τ =100 INPUT TO LO 50Ω 50Ω TO DL INPUT 50Ω 50Ω φ 50Ω τ=20/140nS TO LO INPUT TO LO 0 dBm Min 50Ω 50Ω


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    PDF PN9000 20/140nS 20dBm PN9710 PN9711 PN9712 PN9713 PN9710-00 10 GHz rf delay line Aeroflex PN9000 PN9240 PN9712 PN9711 rf delay line PN9710 PN9713 phase shifter

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


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    PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


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    PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH

    140NSF

    Abstract: No abstract text available
    Text: 140NSF R Naina Semiconductor Ltd. Fast Recovery Diodes, 140A Features • • • • • Diffused Series Industrial grade Excellent surge capabilities Available in Normal and Reverse polarity Optional Avalanche Characteristic Electrical Specifications (TA = 250C, unless otherwise noted)


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    PDF 140NSF DO-203AB

    HCF4086B

    Abstract: HCF4086BEY HCF4086BM1 HCF4086M013TR
    Text: HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns Typ. at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS


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    PDF HCF4086B 140ns 100nA JESD13B HCF4086B HCF4086BEY HCF4086BEY HCF4086BM1 HCF4086M013TR

    2SK140

    Abstract: 2SK1406 t1624
    Text: P o w e r F-MOS FET 2SK1406 2S K 1406 Silicon N-Channel Power F-MOS FET P ackage Dim ensions • Features • • • • Low RRD o„ = 0.32il (typ.) High speed switching tf= 140ns (typ.) Secondary breakdown free High voltage power Unit: mm 5.2max. 15.5max.


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    PDF 2SK1406 140ns i717b 2SK140 2SK1406 t1624

    IOL15

    Abstract: No abstract text available
    Text: CD4086BMS CD CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Decem ber 1992 Pinout Features CD4086BMS TOP VIEW • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns OVP. at10V • High Voltage Type 20V Rating) • INHIBIT and ENABLE Inputs *E B& j > in h +EHZECE+ r r


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    PDF CD4086BMS CD4086BMS 140ns at10V 100nA IOL15

    AN541

    Abstract: harris AN541
    Text: HA-2540 ÎH HARRIS S E M I C O N D U C T O R 400MHz, Fast Settling Operational Amplifier November 1996 Description Features • Very High Slew R a te . 400V/|xs • Fast Settling T im e . 140ns


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    PDF HA-2540 400MHz, HA-2540 400MHz 1930nm AN541 harris AN541

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1406 2SK1406 Silicon N-Channel Power F-MOS FET Package Dim ensions • Features • Low R rd „„ =0 .3 2 n (typ.) Unit: mm • High speed switching tf= 140ns (typ.) 5.2max. 15.5max. 6.9mm. • Secondary breakdown free 3.2- • High voltage power


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    PDF 2SK1406 140ns 1717b 2ski40Ã

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


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    PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3

    jeida dram 88 pin

    Abstract: STI321000C2
    Text: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic


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    PDF STI321000C2-xxV STI3210O0C2-60 STI321000CZ-70 STI3210OOC2-8O 120ns 140ns 160ns 88-PIN STI321000C2 jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.


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    PDF EN4287A 2SK2045 140ns)

    Untitled

    Abstract: No abstract text available
    Text: H "» CD4086BMS CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate December 1992 Pinout Features CD4086BMS • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns Typ. at 10V TOP VIEW • High Voltage Type (20V Rating) • INHIBIT and ENABLE Inputs *E • 100% Tested for Quiescent Current at 20V


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    PDF CD4086BMS 140ns 100nA 18Vand CD4086BMS