13JUN05 Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC REVISIONS Dl ST CM 54 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LTR DATE DESCRIPTION R EC 0G3B 1043 04 DWN APVD BSV DPB 13JUN05 D D ro CL CM < ^ _ □ C 0.38 A + -0.25

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LÛC ALL RIGHTS RESERVED. DIST REVISIONS CM 54 LTR V DATE DESCRIPTION EC 0G3B 1043 04 DWN APVD BSV DPB 13JUN05 D D CL CN 95.1 0 3 .7 4 4 24 5-640474-4 91.13

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC Dl ST CM 54 LTR R DATE DESCRIPTION DWN BSV DPB 13JUN05 EC 0G3B 1043 04 APVD D CL Csl < □ C 2.46+0.15 +0,38 -0.25 + .015

Si7308DN

Contextual Info: SPICE Device Model Si7308DN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7818DN

Abstract: si7818
Contextual Info: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested

Si7421DN

Abstract: Si7421DN-T1
Contextual Info: Si7421DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −9.8 0.043 @ VGS = −4.5 V −7.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Contextual Info: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space

Contextual Info: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Si4430BDY

Abstract: A18280
Contextual Info: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SIP41109DY-T1-E3

Abstract: SiP41109 SiP41109DB SiP41110 SiP41110DB
Contextual Info: SiP41109/41110 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS PWM With Tri-State Enable 12-V Low-Side Gate Drive SiP41109 8-V Low-Side Gate Drive (SiP41110) Undervoltage Lockout

Si4413DY

Contextual Info: SPICE Device Model Si4413DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4401DY

Contextual Info: SPICE Device Model Si4401DY Vishay Siliconix P-Channel 40-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

72741

Abstract: Integrated Circuit 72741 72741 B Si4473BDY
Contextual Info: SPICE Device Model Si4473BDY Vishay Siliconix P-Channel 14-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4451DY

Contextual Info: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4405DY

Abstract: Si4405DY SPICE Device Model
Contextual Info: SPICE Device Model Si4405DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI7423DN-T1-E3

Abstract: Si7423DN
Contextual Info: Si7423DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −11.7 0.030 @ VGS = −4.5 V −9.0 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC

SI4464

Abstract: Si4464DY
Contextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4430DY

Contextual Info: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4425BDY

Abstract: 15TR13
Contextual Info: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

13JAN

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D C A SPACES AT 2.5 4 [.1 00] = B 1.14 [.045] L 2.29 + 0.05 [.0 9 0 + .002] 0.7 6 + 0.05 [.0 3 0 + .002] RECOMMENDED PC BOARD MOUNTING DIMENSIONS

Contextual Info: SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling

Contextual Info: SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling

Contextual Info: SiE800DF Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided