13H4501 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link

Contextual Info: Key Parameters VRRM = 4500 IFAVM = 1200 IFRMS = 1900 IFSM = 25 VF0 = 1.30 rF = 0.48 VDClink = 2800 V A A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses

5SDF01R2501

Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­

ABB GTO

Abstract: stud type diodes fjs 500
Contextual Info: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.

ABB 5SGA

Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.