Untitled
Abstract: No abstract text available
Text: KVR1333D3S4R9S/2GEF FEATURES: 2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered w/ Parity CL9 240-Pin DIMM • • • • • • • DRAM SUPPORTED: Elpida F-Die • • • JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin
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KVR1333D3S4R9S/2GEF
72-Bit
DDR3-1333
240-Pin
667MHz
1333Mb/sec/pin
DDR31333)
110ns
VALUERAM0955-001
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FBGA DDR3 x32
Abstract: "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number
Text: DDR3 SDRAM Feature Comparison of DDR3, DDR2, and DDR SDRAM Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 533/667MHz 200/266/333/400MHz 100/133/166/200MHz Transfer data rate 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps I/O width x4/x8/x16 x4/x8/x16
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533/667MHz
200/266/333/400MHz
100/133/166/200MHz
1066/1333Mbps
400/533/667/800Mbps
200/266/333/400Mbps
x4/x8/x16
x4/x8/x16/x32
512Mb
FBGA DDR3 x32
"DDR3 SDRAM"
DDR3 SDRAM
78 ball fbga
ddr3 specification
DDR3 architecture
ELPIDA DDR3
1066
Single Data Rate SDRAM Memory Controller with 512MB
DDr3 part number
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Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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NT1GC72B89A0NF
Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency
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NT1GC72B89A0NF
NT2GC72B8PA0NF
NT1GC72B89A1NF
NT2GC72B8PA1NF
PC3-8500
PC3-10600
DDR3-1066/1333
128Mx8
PC3-8500
nanya 2gb DDR3 DIMM
NT2GC72B8PA0NF-CG
ddr3 PCB footprint
NT2GC72B8PA0NF
Nanya DDR3
DDR3 DIMM footprint
DDR3 udimm jedec
PC3-10600
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k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
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Untitled
Abstract: No abstract text available
Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5173BH0
M471B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx64
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Untitled
Abstract: No abstract text available
Text: UG64U6400L8DU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR3 SDRAM Unbuffered DIMM based on 8 pcs 64M x 8 DDR3 SDRAM 8K Refresh FEATURES SPECIFICATIONS • Density: 512MB
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UG64U6400L8DU
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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L9D3256M32SBG1
Abstract: No abstract text available
Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
DDR3-1333
LDS-L9D3xxxM32SBG1
L9D3256M32SBG2I107
L9D3256M32SBG1
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L1333
Abstract: ARM v7
Text: 300 series Marvell ARMADA 370 System-on-Chip SoC Family of Integrated Controllers PRODUCT OVERVIEW The Marvell ARMADA 370 is a highly integrated and high-performance ARM V7-based system-on-chip (SoC) suited for a variety of home and enterprise applications. With its on-chip floating point engine, 256K L2 cache, and multiple
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SoC-01
L1333
ARM v7
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TA 7698 AP
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
F5478O54UDI3<
54Ogi
F5734O54UDI3<
86Ogi
3057X
/202897X1-203X
TA 7698 AP
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Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873GB0
M471B5673GB0
204pin
78FBGA
K4B1G0846G
128Mbx8
256Mx64
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K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KVR1333D3E9SK2/4GI 4GB 2GB 256M x 72-Bit x 2 pcs. PC3-10600 CL9 ECC 240-Pin DIMM Kit DESCRIPTION ValueRAM’s KVR1333D3E9SK2/4GI is a kit of two 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory modules, Intel
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KVR1333D3E9SK2/4GI
72-Bit
PC3-10600
240-Pin
KVR1333D3E9SK2/4GI
2048MB)
DDR3-1333
DDR31333
4096MB)
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2gb ddr3
Abstract: ddr3-1333 2gb pc3-10600 DDR3 DIMM SPD DDR3-1333 DDR3 DIMM SPD JEDEC kvr1333d3n9 2rx8 DDR3 1333 2Rx8
Text: Memory Module Specifications KVR1333D3N9/2G 2GB 2Rx8 256M x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may
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KVR1333D3N9/2G
64-Bit
PC3-10600
240-Pin
64-bit
DDR3-1333
VALUERAM0662-001
2gb ddr3
ddr3-1333 2gb pc3-10600
DDR3 DIMM SPD
DDR3 DIMM SPD JEDEC
kvr1333d3n9
2rx8
DDR3 1333 2Rx8
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C9D3K4/16GX 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)
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KHX1600C9D3K4/16GX
64-Bit
DDR3-1600
240-Pin
160ns
KHX1600C9D3K4/16GX
64-bit
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)
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KHX1600C9D3K6/12GX
64-Bit
DDR3-1600MHz
240-Pin
110ns
KHX1600C9D3K6/12GX
2048MB)
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72-BIT
Abstract: DDR3 DIMM SPD JEDEC KVR1333
Text: Memory Module Specifications KVR1333D3D8R9S/2GHT 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB DRAM Supported: Hynix T-Die SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin)
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KVR1333D3D8R9S/2GHT
72-Bit
PC3-10600
240-Pin
2048MB)
DDR3-1333MHz
1333MHz
DDR3 DIMM SPD JEDEC
KVR1333
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KVR1333D3E9S
Abstract: 1333Mb
Text: Memory Module Specifications KVR1333D3E9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 ECC 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh
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KVR1333D3E9S/2GI
72-Bit
PC3-10600
240-Pin
2048MB)
DDR3-1333MHz
DDR3-1333
1333MHz
KVR1333D3E9S
1333Mb
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Untitled
Abstract: No abstract text available
Text: Memory Module Specification KVR1333D3E9SK3/6G 6GB 2GB 256M x 72-Bit x 3 pcs. PC3-10600 Triple-Channel CL9 ECC 240-Pin DIMM Kit DESCRIPTION: ValueRAM's KVR1333D3E9SK3/6G is a kit of three 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC triple-channel memory modules, based on eighteen 128M x 8-bit DDR3-1333 FBGA
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KVR1333D3E9SK3/6G
72-Bit
PC3-10600
240-Pin
KVR1333D3E9SK3/6G
2048MB)
DDR3-1333
6144MB)
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)
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KHX1600C7D3K3/6GX
64-Bit
DDR3-1600MHz
240-Pin
110ns
KHX1600C7D3K3/6GX
2048MB)
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ddr3
Abstract: DDR3 DIMM SPD JEDEC DDR3 SPD
Text: T E C H N O L O G Y Memory Module Specification KHX1333C7D3/1G 1GB 128M x 64-Bit DDR3-1333MHz CL7 240-Pin DIMM DESCRIPTION: This document describes Kingston's 128M x 64-bit 1GB 1024MB DDR3-1333MHz CL7 SDRAM (Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR3 FBGA components. This module has been tested to run
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KHX1333C7D3/1G
64-Bit
DDR3-1333MHz
240-Pin
1024MB)
ddr3
DDR3 DIMM SPD JEDEC
DDR3 SPD
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K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
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