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    BUD Industries Inc PN-1333-MB

    BOX PLASTIC GRAY 6.39"L X 3.25"W
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    1333MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KVR1333D3S4R9S/2GEF FEATURES: 2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered w/ Parity CL9 240-Pin DIMM • • • • • • • DRAM SUPPORTED: Elpida F-Die • • • JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin


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    PDF KVR1333D3S4R9S/2GEF 72-Bit DDR3-1333 240-Pin 667MHz 1333Mb/sec/pin DDR31333) 110ns VALUERAM0955-001

    FBGA DDR3 x32

    Abstract: "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number
    Text: DDR3 SDRAM Feature Comparison of DDR3, DDR2, and DDR SDRAM Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 533/667MHz 200/266/333/400MHz 100/133/166/200MHz Transfer data rate 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps I/O width x4/x8/x16 x4/x8/x16


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    PDF 533/667MHz 200/266/333/400MHz 100/133/166/200MHz 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps x4/x8/x16 x4/x8/x16/x32 512Mb FBGA DDR3 x32 "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


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    PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


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    PDF NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64

    Untitled

    Abstract: No abstract text available
    Text: UG64U6400L8DU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR3 SDRAM Unbuffered DIMM based on 8 pcs 64M x 8 DDR3 SDRAM 8K Refresh FEATURES SPECIFICATIONS • Density: 512MB


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    PDF UG64U6400L8DU

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


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    PDF EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


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    PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1

    L1333

    Abstract: ARM v7
    Text: 300 series Marvell ARMADA 370 System-on-Chip SoC Family of Integrated Controllers PRODUCT OVERVIEW The Marvell ARMADA 370 is a highly integrated and high-performance ARM V7-based system-on-chip (SoC) suited for a variety of home and enterprise applications. With its on-chip floating point engine, 256K L2 cache, and multiple


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    PDF SoC-01 L1333 ARM v7

    TA 7698 AP

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:


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    PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M F5478O54UDI3< 54Ogi F5734O54UDI3< 86Ogi 3057X /202897X1-203X TA 7698 AP

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64

    K4B4G0846C

    Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
    Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4B4G0446C K4B4G0846C 78FBGA K4B4G0846C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KVR1333D3E9SK2/4GI 4GB 2GB 256M x 72-Bit x 2 pcs. PC3-10600 CL9 ECC 240-Pin DIMM Kit DESCRIPTION ValueRAM’s KVR1333D3E9SK2/4GI is a kit of two 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory modules, Intel


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    PDF KVR1333D3E9SK2/4GI 72-Bit PC3-10600 240-Pin KVR1333D3E9SK2/4GI 2048MB) DDR3-1333 DDR31333 4096MB)

    2gb ddr3

    Abstract: ddr3-1333 2gb pc3-10600 DDR3 DIMM SPD DDR3-1333 DDR3 DIMM SPD JEDEC kvr1333d3n9 2rx8 DDR3 1333 2Rx8
    Text: Memory Module Specifications KVR1333D3N9/2G 2GB 2Rx8 256M x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may


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    PDF KVR1333D3N9/2G 64-Bit PC3-10600 240-Pin 64-bit DDR3-1333 VALUERAM0662-001 2gb ddr3 ddr3-1333 2gb pc3-10600 DDR3 DIMM SPD DDR3 DIMM SPD JEDEC kvr1333d3n9 2rx8 DDR3 1333 2Rx8

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C9D3K4/16GX 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)


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    PDF KHX1600C9D3K4/16GX 64-Bit DDR3-1600 240-Pin 160ns KHX1600C9D3K4/16GX 64-bit

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)


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    PDF KHX1600C9D3K6/12GX 64-Bit DDR3-1600MHz 240-Pin 110ns KHX1600C9D3K6/12GX 2048MB)

    72-BIT

    Abstract: DDR3 DIMM SPD JEDEC KVR1333
    Text: Memory Module Specifications KVR1333D3D8R9S/2GHT 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB DRAM Supported: Hynix T-Die SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin)


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    PDF KVR1333D3D8R9S/2GHT 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333MHz 1333MHz DDR3 DIMM SPD JEDEC KVR1333

    KVR1333D3E9S

    Abstract: 1333Mb
    Text: Memory Module Specifications KVR1333D3E9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 ECC 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 72-bit 2GB SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh


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    PDF KVR1333D3E9S/2GI 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333MHz DDR3-1333 1333MHz KVR1333D3E9S 1333Mb

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR1333D3E9SK3/6G 6GB 2GB 256M x 72-Bit x 3 pcs. PC3-10600 Triple-Channel CL9 ECC 240-Pin DIMM Kit DESCRIPTION: ValueRAM's KVR1333D3E9SK3/6G is a kit of three 256M x 72-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC triple-channel memory modules, based on eighteen 128M x 8-bit DDR3-1333 FBGA


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    PDF KVR1333D3E9SK3/6G 72-Bit PC3-10600 240-Pin KVR1333D3E9SK3/6G 2048MB) DDR3-1333 6144MB)

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)


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    PDF KHX1600C7D3K3/6GX 64-Bit DDR3-1600MHz 240-Pin 110ns KHX1600C7D3K3/6GX 2048MB)

    ddr3

    Abstract: DDR3 DIMM SPD JEDEC DDR3 SPD
    Text: T E C H N O L O G Y Memory Module Specification KHX1333C7D3/1G 1GB 128M x 64-Bit DDR3-1333MHz CL7 240-Pin DIMM DESCRIPTION: This document describes Kingston's 128M x 64-bit 1GB 1024MB DDR3-1333MHz CL7 SDRAM (Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR3 FBGA components. This module has been tested to run


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    PDF KHX1333C7D3/1G 64-Bit DDR3-1333MHz 240-Pin 1024MB) ddr3 DDR3 DIMM SPD JEDEC DDR3 SPD

    K4B4G0846B-HYK0

    Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
    Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4B4G0446B K4B4G0846B 78FBGA K4B4G0846B-HYK0 K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932