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Contextual Info: HARRIS Mill SEMICONDUCTOR MbE D • 1302Sfa1 0 0 0 0 1 5 3 " T 2 j HARRIS - 3 t | - 3 S H M F -03100 -1 0 0 -200 -3 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * +15, +19 and +21 dBm Output Power Selections Available * Large Cross Section Ti/Pt/Au Gates |
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