13000 TRANSISTOR Search Results

T108

Abstract: SMT6 T108 T246 sMT6 T100 T106 T110 T116 T146 T148
Contextual Info: Transistors Packaging Packaging FSurface-mount type Package Code packaging specification direction Basic ordering unit TL Embossed tape Pin 1 is nearest to the sprocket hole. 13000 pcs TBL Embossed tape Pin 1 is nearest to the sprocket hole. 15000 pcs T106

transistor bf 760

Abstract: MCH4008 945 npn
Contextual Info: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

MCH4008

Abstract: TB 2920
Contextual Info: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

mje 3007

Contextual Info: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)

sanyo eg 8500

Abstract: transistor 9747 MCH4009
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

sanyo eg 8500

Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

Contextual Info: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

NE64400

Abstract: 11744 502
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES The NE644 is a series of NPN silicon transistors designed foruse in low-noise, small signal amplifiers up to 6 GHz. The series features excellent power gain with very low noise figures. NE644 transistors are available in chip form or in

mje 3007

Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

13000 BR transistor

Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

TRANSISTOR K 2191

Abstract: nec 2761
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

NE334S01

Abstract: transistor C 2240 K 1358 fet transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

estamat pfc12

Abstract: ESTAMAT power factor ESTAMAT estamat pfc 6 power factor controller esta power factor controller ESTAMAT PFC6 SUMMATION current transformer vishay interactive INTERACTIVE . VISHAY
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book ESTAmat PFC vishay ESTA vse-db0050-0509 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM

Abstract: LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
Contextual Info: CY2292 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2292 or field-programmable Programming support available for all opportunities

NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM

Abstract: LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
Contextual Info: 5 CY2292 Three-PLL General-Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2292 or field-programmable Programming support available for all opportunities

laptop motherboard circuit diagram

Abstract: 4 MHz crystal 13000 transistor laptop motherboard resistors TRANSISTOR 13000 xtal 32.768 CY2295 ICD2023 ICD2028 CY2291
Contextual Info: CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities

NEC Ga FET

Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

CY2291

Abstract: CY2291F CY2291FI CY2291I CY2292 CY2295 ICD2023 ICD2028 laptop intel MOTHERBOARD CIRCUIT diagram ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Contextual Info: 5 CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities