13-AB TRANSISTOR Search Results

buz7l

Abstract: BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated Type V„ Tc ^DS on Package 1> Ordering Code BUZ 71 50 V 14 A 28 *C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 'C 0.12 Q TO-220 AB

Contextual Info: TO -22 AB BUK953R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

MJD310

Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Contextual Info: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

transistor marking z9

Abstract: Arco Variable Capacitors MRF282
Contextual Info: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

16l soic8

Abstract: qfn16 thermal resistance
Contextual Info: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters

SD2903

Abstract: Dow Corning 140 M229
Contextual Info: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

Contextual Info: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

SD2903

Contextual Info: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION

variable capacitor

Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

30pf variable capacitor

Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

Contextual Info: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

SD2903

Contextual Info: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS

HF75-12

Abstract: transistors MRF454 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR

DIODE BUZ 94

Contextual Info: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current

DIODE BY 255

Abstract: C67078-S1406-A2
Contextual Info: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol

Contextual Info: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current

C67078-S1316-A3

Contextual Info: BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 Ω TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter

sd 431 transistor

Abstract: transistor buz 210
Contextual Info: SIEMENS BUZ 71 AL N o t fo r n e w rip a ig n SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 71 AL Vbs 50 V 13 A flbs on 0.12 ß Package Ordering Code TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter

C67078-S1326-A3

Contextual Info: BUZ 71 AL Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 AL 50 V 13 A 0.12 Ω TO-220 AB C67078-S1326-A3 Maximum Ratings

VPT05381

Abstract: BUZ71
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated S t# VPT05381 Type VDS Id Tc ^DS on Package O rdering Code BUZ 71 50 V 14 A 28 "C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 "C

367 al

Abstract: buZ71 C67078-S1316-A2 BUZ 95
Contextual Info: SIPMOS Power Transistors ● ● ● ● BUZ 71 AL BUZ 71 L N channel Enhancement mode Avalanche-rated Logic Level Type VDS ID TC RDS on Package 1) Ordering Code BUZ 71 AL 50 V 13 A 25 ˚C 0.12 Ω TO-220 AB C67078-S1326-A5 BUZ 71 L 50 V 14 A 28 ˚C 0.10 Ω

Contextual Info: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is

IC CD4011B

Abstract: CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS
Contextual Info: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs

CD4012B

Abstract: CD4011B CD4011BMS CD4012BMS CD4023B CD4023BMS
Contextual Info: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs