12V TO 300V DC-DC USING Search Results

Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

IGBT 40A

Abstract: igbt 300V 70A FGA70N30T FGA70N30TTU
Contextual Info: FGA70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 200v 30a

Abstract: FGPF50N30T FGPF50N30TTU
Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 300V 10A datasheet

Abstract: FGPF30N30TTU
Contextual Info: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 300V 30A

Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Contextual Info: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGA70N30TD

Contextual Info: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF70N30T

Abstract: igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU
Contextual Info: FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF70N30TD

Abstract: igbt 300V 10A datasheet
Contextual Info: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: FQB9N30 / FQI9N30 May 2000 QFET TM FQB9N30 / FQI9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB9N30 / FQI9N30 May 2000 QFET TM FQB9N30 / FQI9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: Automation Controls Catalog 1a 8A, 1a1b/2a 5A small polarized power relays RoHS compliant Protective construction: Sealed type 3. High sensitivity Using the same type of highperformance polar magnetic circuits as DS relays, by matching the spring load to the magnetic force of attraction,

Tenma

Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
Contextual Info: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals

HV9910B dc to dc converter 12v design

Abstract: 300V dc to dc buck converter circuit diagram of .5 watt led driver for 12v dc h48 diode AC 12V to DC 12 V with Bridge Diode Diagram half bridge converter 80V output 15A 300V dc dc STEP DOWN DC DC converter 1A 400V TO 220 Package diode H48 hv9910b
Contextual Info: AN-H48 Application Note Buck-based LED Drivers Using the HV9910B Fundamental Buck Converter topology is an excellent choice for LED drivers in off-line as well as low-voltage applications as it can produce a constant LED current at very high efficiencies and low cost. A peak-current-controlled buck

IPC-2221

Abstract: flyback transformer philips transformer pulse 6 pin 500v Philips Electrolytic Capacitor 150uF Flyback Transformers SANYO flyback transformer sanyo output capacitor charging flyback 10 pin flyback transformer PHILIPS TDK Pulse Transformers LT3750
Contextual Info: L DESIGN FEATURES Tiny Controller Makes It Easy to by David Ng Charge Large Capacitors Introduction Emergency warning beacons, inventory control scanners, professional photoflash and many other systems operate by delivering a pulse of energy to a transducer. This energy typically

in5231

Abstract: driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245
Contextual Info: AN-H20 Application Note HVCMOS Drivers for Non-Impact Printing This article discusses the use of monolithic high voltage ICs for non-impact printing and plotting applications. Supertex’s HVCMOS process technology allows combining low voltage logic as well as high voltage DMOS outputs up to 400V on

MBM400GR6

Abstract: PDE-M400GR6-0 Hitachi DSA0047 99016
Contextual Info: Spec. No. IGBT-SP-99016 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM400GR6 [Rated 400A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

YAZAKI 7282-1020

Abstract: YAZAKI 7283 VARISTOR znr YAZAKI relay YAZAKI Terminal varistor 400V YAZAKI Terminal 7282-1020 YAZAKI 7283-1020 connector yazaki 7283 yazaki
Contextual Info: EV AEV Capsule contact Mechanism and High-capacity Cut-off Compact Relay 10A 20A 80A 120A EV RELAYS (AEV) FEATURES TYPICAL APPLICATIONS 1. Compact and lightweight Charged with hydrogen gas for high arc cooling capacity, short gap cutoff has been achieved at high DC voltages.

mosfet equivalent fda 59 n 30

Abstract: FDA59N30
Contextual Info: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)

mosfet equivalent fda 59 n 30

Abstract: MOSFET 300V FDA59N30 mosfet fda 59 n 30
Contextual Info: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)

FDP46N30

Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)

Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)