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    onsemi FDA59N30

    MOSFET N-CH 300V 59A TO3PN
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    DigiKey FDA59N30 Tube 586 1
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    Mouser Electronics FDA59N30 4,607
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    Richardson RFPD FDA59N30 450
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    Fairchild Semiconductor Corporation FDA59N30

    MOSFET N-CH 300V 59A TO-3P / Trans MOSFET N-CH 300V 59A 3-Pin(3+Tab) TO-3P Tube
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    Win Source Electronics FDA59N30 15,119
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    FDA59N30 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDA59N30 Fairchild Semiconductor 300V N-Channel MOSFET Original PDF
    FDA59N30_NL Fairchild Semiconductor 300V N-Channel MOSFET Original PDF

    FDA59N30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDA59N30

    Abstract: No abstract text available
    Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA59N30 FDA59N30 PDF

    mosfet equivalent fda 59 n 30

    Abstract: FDA59N30
    Text: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)


    Original     		FDA59N30 FDA59N30 mosfet equivalent fda 59 n 30 PDF

    mosfet equivalent fda 59 n 30

    Abstract: MOSFET 300V FDA59N30 mosfet fda 59 n 30
    Text: TM FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS on = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)


    Original     		FDA59N30 FDA59N30 mosfet equivalent fda 59 n 30 MOSFET 300V mosfet fda 59 n 30 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA59N30 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF