128KWORDS Search Results

nec dsp 32bit opcode

Abstract: D481850
Contextual Info: PRELIMINARY NEC / MOS Integrated Circuit UPD481850 8Mb Synchronous Graphics Memory 128Kword x 32b it x 2 Banks p.PD481850 is a synchronous graphics memory (SGRAM) organized as 128Kwords x 32bit x 2 Bank random access port. This device can operate up to 100MHz by using synchronous

MT28C3212P2FL

Abstract: MT28C3212P2NFL FX433 FY442
Contextual Info: ADVANCE‡ 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

TRS-150

Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

MB81G83222-010

Abstract: MB81G83222-012 MB81G83222-015 MB81G83222PQ 216-0040
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

FY442

Abstract: FY444 FY445
Contextual Info: 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

mb8114

Abstract: Fujitsu DRAM
Contextual Info: August 1994 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 4 1 6 2 3 -010/-012/-015 CMOS 2 X 128KX 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 131,072-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81141623 is a CMOS Synchronous Dynamic Random Access Memory

HM62G36128

Abstract: HM62G36128BP-4 HM62G36128BP-5 SA10 SA11 SA13 SA15 SA16 Hitachi DSA00481
Contextual Info: HM62G36128 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-1008(Z) Preliminary, Rev. 0.0 Feb. 5, 1999 Features • • • • • • • • • • • • • • • • 3.3V+10%, –5% Operation 4M bit density 200MHz - 250MHz frequency

tms 1035

Abstract: 74F00 74F153 74HCT4040 ADSP-21020 HN27C256FP-25T spl21k 280257 BY275
Contextual Info: JTAG Downloader 10 The ADSP-21020 has two external memory spaces—data memory which is 40-bits wide and stores data and program memory (which is 48-bits wide and can store instructions and data). After power-on reset, external RAM in the system is uninitialized. You must provide a method of

Contextual Info: [» [iS C m Y O !* ] In te l A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked

NM27C010

Contextual Info: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with

tms320cXX

Abstract: TMS57002 tms320c26 dsk TMS320C26 TMS320C31 TMS DASP 93C26 h004 ti31 CS4248
Contextual Info: S.E.E.D. Mr. M. Marani Viale Roma 88/A 54100 Massa MS Italy (+39) 585 792990 Fax: (+39) 585 792989 e-mail: mc4453@mclink.it Company Background S.E.E.D. is an association of electronic engineers and computer science specialists, founded in 1993 and based in Massa, Italy. S.E.E.D. operates in the DSP field giving consulting about specific applications of the customers and is able to design or integrate

MB81G83222-010

Abstract: MB81G83222-012 MB81G83222 MB81G83222-015
Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ December 1995 Edition 2.1 PRODUCT PROFILE SHEET MB81G83222-010/-012/-015 CMOS 2 x 128K x 32 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT

LX50CM4128

Abstract: linvex technology
Contextual Info: LINVEX TECHNOLOGY, CORP. LX50CM4128 512K x 8 Bit ROM and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • Both ROM and RAM in one chip • Wide Operating Voltage Range: 1.8 - 3.3V • Fast Access Time 1.8 V Operation: 500 ns Max.

Contextual Info: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

29050

Contextual Info: Ä m K l i 0M 1F® I^Ö M 1Ä ¥D ® M in te l A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive a x8/x16 Input/Output Architecture • ■ ■ ■ ■ ■ — A28F200BX-T, A28F200BX-B — For High Performance and High

FY442

Abstract: 128k memory ram MT28C3212P2FL MT28C3212P2NFL 150MAX FX433
Contextual Info: 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no

HM67S36130

Abstract: HM67S36130BP-7 SA10 SA11 SA12 SA13 SA15 SA16 Hitachi DSA0015
Contextual Info: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview, Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

ecg semiconductors master replacement guide

Abstract: BLOCK DIAGRAM FOR LPG GAS DETECTION digital blood glucose monitoring circuit diagram 12v dc to 200v ac inverter 100w circuit diagrams schematic diagram 48v bldc motor speed controller ultrasound piezoelectric design probe transducer finger pulse oximeter block diagram of ct scanner TRANSISTOR REPLACEMENT ECG ECG HEART BEAT SENSOR
Contextual Info: TM Technology for Innovators Medical Applications Guide Amplifiers, Clocks, Data Converters, Digital Signal Processors, Digital Temperature Sensors, Interface, Logic, Microcontrollers, Power Management, RF ICs 2Q 2007 ➔ Inside Consumer and Portable Medical 3

27C040

Abstract: 27C256 27C512 FM27C010 27C512 UV
Contextual Info: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

M29DW256

Abstract: 0C60000 06FFFFF 013F 099FFFF
Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • VPP/WP# pin for fast program and write – Protects the four outermost parameter blocks

28F400BC

Abstract: AB28F200BXB90 8XC196KC logical block diagram of 80286 microprocessor 80286 internal architecture 80960CA A28F200BX-B A28F200BX-T
Contextual Info: A28F200BX-T B 2-MBIT 128K x 16 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive Y x8 x16 Input Output Architecture A28F200BX-T A28F200BX-B For High Performance and High Integration 16-bit and 32-bit CPUs Y Optimized High Density Blocked Architecture One 16 KB Protected Boot Block

MB81G83222-012

Abstract: MB81G83222-010 MB81G83222-015
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing

OMRON EE-sx 412

Abstract: transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes
Contextual Info: Solution Selection Guide 2014 Au t o m a t i o n S y s t e m s M o t i o n & D r i ve s Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial

28F400BC

Abstract: AB28F200BX-B90 29050 AB28F
Contextual Info: M M /M'Vam OKllF ISIMiaTO Kl A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY A utom otive • Very High-Performance Read — 90 ns Maximum Access Time — 45 ns Maximum Output Enable Time ■ x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B