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    128FB Price and Stock

    NKK Switches YB25CKW01-28-FB

    SWITCH PUSHBUTTON DPDT 3A 125V
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    DigiKey YB25CKW01-28-FB Box
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    NKK Switches YB25SKW01-28-FB

    SWITCH PUSHBUTTON DPDT 3A 125V
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    DigiKey YB25SKW01-28-FB Bulk
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    Macronix International Co Ltd MX29VS128FBXJI-80G

    IC FLASH 128MBIT PAR 56CSPBGA
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    DigiKey MX29VS128FBXJI-80G Tray 3,000
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    Vishay Beyschlag SMM02070C4128FBP00

    RES SMD 4.12 OHM 1% 1W MELF
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    DigiKey SMM02070C4128FBP00 Reel 1,500
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    XMOS Ltd XLF208-128-FB236-I10

    IC MCU 32BIT 1MB FLASH 236FBGA
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    DigiKey XLF208-128-FB236-I10 Tray
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    Find more 128FB price and stock on Findchips.com

    128FB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDR2 x32

    Abstract: K4T1G313QI-MCE7
    Text: DDR2 SDRAM K4T1G313QI 1Gb x32 I-die DDR2 SDRAM Specification 128FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4T1G313QI 128FBGA DDR2 x32 K4T1G313QI-MCE7

    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT 128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56

    ML8011-LC-US28

    Abstract: ML-8005 ML8011-LCR-US28 lansrlu1 fingerprint scanner circuit PRO22R2 PRO22ENC1 PRO22E1EN PRO22BAT1 N-485-PCI-2
    Text: Honeywell Access Systems Honeywell Security Honeywell Access Systems Let’s Talk Solutions Intro Tabs.indd 3 8/13/08 3:39:49 PM HONEYWELL ACCESS SYSTEMS CONTENTS SOFTWARE & SYSTEMS STANDALONE SYSTEMS WIN-PAK SE .235


    Original     		PDF N-485 NC2441-TN NCP2441-TN RS485 Systems-329-376 ind376 ML8011-LC-US28 ML-8005 ML8011-LCR-US28 lansrlu1 fingerprint scanner circuit PRO22R2 PRO22ENC1 PRO22E1EN PRO22BAT1 N-485-PCI-2

    ADS29464

    Abstract: MO-195 y14.5m
    Text: THIS DRAWING CONTAINS CONFIDENTIAL INFORMATION PROPRIETARY TO SEC IT MUST NOT BE REPRODUCED OR DISCLOSED TO OTHERS OR USED IN ANY OTHER WAY IN WHOLE OR PART EXCEPT AS AUTHORIZED IN WRITING BY SEC REV. DATE 000 2008.01.24 0.10 C 2X 8.00 128-Φ0.30±0.05 A


    Original     		PDF 5M-1994 MO-195 128-FBGA-08 SJ-07172-O ADS29464 ADS29464 MO-195 y14.5m

    R01US0015E

    Abstract: R20UT0728E
    Text: User’s Manual FF QB-RL78G13 In-Circuit Emulator User’s Manual Target Devices RL78/G12, G13 Rev.2.00 2012.3 General Precautions for Handling This Product 1. Circumstances not covered by product guarantee • If the product was disassembled, altered, or repaired by the customer


    Original     		PDF QB-RL78G13 RL78/G12, R20UT0764EJ0200 R01US0015E R20UT0728E

    1f1-1717-a19

    Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
    Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O


    Original     		PDF 60WMBG 60M/54WBGA-8 10X15 10-8X12-A LA69-00635A 48TBGA 48-TBGA-10 0-8X16-O LA69-00267A ADS11981 1f1-1717-a19 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9

    ADS26817

    Abstract: MO-195
    Text: THIS DRAWING CONTAINS CONFIDENTIAL INFORMATION PROPRIETARY TO SEC IT MUST NOT BE REPRODUCED OR DISCLOSED TO OTHERS OR USED IN ANY OTHER WAY IN WHOLE OR PART EXCEPT AS AUTHORIZED IN WRITING BY SEC REV. DATE 000 2007.07.10 0.10 C 2X 8.00 128-Φ0.30±0.05 A


    Original     		PDF 5M-1994 MO-195 128-FBGA-08 PS-07087-O ADS26817 ADS26817 MO-195

    thermal analysis on pcb

    Abstract: 0808 128-FBGA-0808
    Text: 128-FBGA-0808 SAMSUNG SEMICONDUCTOR, INC. 128-FBGA-0808 ‰ Thermal Analysis ‰ Electrical Analysis R N E O D I N T U LA U M I S ❑ PCB layer standard 4layers. SAMSUNG SEMICONDUCTOR, INC.


    Original     		PDF 128-FBGA-0808 thermal analysis on pcb 0808 128-FBGA-0808

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    CR10

    Abstract: M58LR128FB M58LR128FT VFBGA56
    Text: M58LR128FT 128FB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR128FT M58LR128FB 54MHz CR10 M58LR128FB M58LR128FT VFBGA56

    EDE2116ACBG

    Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 Ver.9.0 Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1454E90 240-pin M01E0706 EDE2116ACBG EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG

    PC2-6400

    Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
    Text: セレクションガイド DRAM セレクションガイド Document No. J1241E80 Ver.8.0 Date Published August 2008 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1241E80 240-pin 204-pin x32/x16 512Mbit EDX5116ADSE 104-FBGA PC2-6400 DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide

    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

    EDJ2116DASE

    Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
    Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG

    Untitled

    Abstract: No abstract text available
    Text: WS57C128F HIGH SPEED 16Kx 8 CMOS EPROM FOR M A IN TE N A N C E PU R PO SES ONLY! N O T TO B E USED FOR N EW DESIGNS. SEE W S57C 128FB FOR N EW VERSION! KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption


    OCR Scan     		PDF WS57C128F 128FB MIL-STD-883C MIL-STD-883C S57C128FB WS57C128F

    A12C

    Abstract: WS27C128F WS27C128F-90 WS27C128F-90DM WS57C128FB
    Text: W S27C 128F M ILITA R Y 16K x 8 C M O S EPRO M FO R M A IN TE N A N C E PU R PO SES ONLY! N O T TO B E USED FOR N E W DESIGNS. S E E W S57C 128FB FO R N E W D ESIG N S! K E Y FEA TU R ES • Fast Access Time • EPI Processing — 90 ns Over Full Mil Temp Range


    OCR Scan     		PDF WS27C128F WS57C128FB WS27C128F WS27C128F-90DM MIL-STD-883C A12C WS27C128F-90

    Untitled

    Abstract: No abstract text available
    Text: 128FB HIGH SPEED 16Kx 8 CMOS EPROM KEY FEATURES • Very Fast Access Time • Standard EPROM Pinout — 35 ns DIP and Surface Mount Packaging Available • Low Power Consumption • EPI Processing — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION


    OCR Scan     		PDF WS57C128FB S57C128FB MIL-STD-883C MIL-STD-883C WS57C128FB-35D S57C128FB-45D S57C128FB-45DMB

    16K x 8

    Abstract: No abstract text available
    Text: lilla.I FAMILY OF HIGH PERFORMANCE CMOS EPROMs PART NUMBER SPEED ns DRAWING NO. NO. OF PINS PACKAGE 8 5 5 -7 0 C2 D2 J4 32 28 32 C LLC C C E R D IP . 0,6" P LD C C 8 90 C2 D2 32 28 C LLC C C E R D IP , 0.6" 16K X 8 5 5 -7 0 C2 D2 32 28 C LLC C C E R D IP , 0.6"


    OCR Scan     		PDF 128FB WS57C256F WS27C256F WS57C128F WS57C128FB WS27C128F WS57C64F WS27C64F 16K x 8