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    128MBIT Search Results

    128MBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25SF128A-SHBHD-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF128A-SHB-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF128A-MHB-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25QF128A-MHB-T Renesas Electronics Corporation 128Mbit, 3V SPI Serial Flash Memory with Dual I/O and Quad I/O Support Visit Renesas Electronics Corporation
    AT25QF128A-SHBHD-T Renesas Electronics Corporation 128Mbit, 3V SPI Serial Flash Memory with Dual I/O and Quad I/O Support Visit Renesas Electronics Corporation

    128MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S280832D

    Abstract: No abstract text available
    Text: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM Revision History Revision 0.0 July, 2001


    Original     		PDF K4S280832D 128Mbit 100MHz A10/AP K4S280832D

    K4R271669F

    Abstract: No abstract text available
    Text: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669F 128Mbit K4R271669F

    K4S280432C

    Abstract: K4S280432D
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History Revision 0.0 Mar., 2001


    Original     		PDF K4S280432D 128Mbit 100MHz A10/AP K4S280432C K4S280432D

    K4R271669E

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669E 128Mbit K4R271669E

    K4R271669E-RcCS8

    Abstract: K4R271669E
    Text: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669E 128Mbit K4R271669E-RcCS8 K4R271669E

    NT5DS4M32EF-25

    Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
    Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.


    Original     		PDF NT5DS4M32EF 4Mx32 128Mbit 32Bit 144-Ball 144-Balla NT5DS4M32EF-25 NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4

    k4n26323ae

    Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
    Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003


    Original     		PDF K4N26323AE-GC 128Mbit 32Bit k4n26323ae K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C3128 128Mbit

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C3128 128Mbit

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 10 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz 100 MHz Clock Cycle Time (tCK3) 5 ns 6 ns 7 ns 7 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3128 128Mbit

    54BALL

    Abstract: V54C3128
    Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C3128 128Mbit 54BALL

    K4S280432C

    Abstract: K4S280432D
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S280432D 128Mbit K4S280432C 10/AP K4S280432D

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type M2V2840ATP-7L AVIC-H09 Model VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output


    Original     		PDF 128Mbit M2V2840ATP-7L AVIC-H09 A0-A11 DQ0-DQ15 A10/AP

    8096 microcontroller features

    Abstract: JESD22-A114A MX23L12854 MX23L12854MC-20G ST10
    Text: MX23L12854 128M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L12854 is a 128Mbit 16M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 128Mbit of Mask ROM 3.0 to 3.6V Single Supply Voltage


    Original     		PDF MX23L12854 128M-BIT 50MHz MX23L12854 128Mbit 128Mbit 16-PIN PM1141 APR/06/2005 8096 microcontroller features JESD22-A114A MX23L12854MC-20G ST10

    BT 4840 amp

    Abstract: K4D261638K-LC50 K4D261638K-LC40 cs 2648 k4d261638k 3620* IBIS
    Text: K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.2 November 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4D261638K 128Mbit 16Bit 65TYP 20MAX 25TYP BT 4840 amp K4D261638K-LC50 K4D261638K-LC40 cs 2648 k4d261638k 3620* IBIS

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.2 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4D263238I-VC 128Mbit 144-Ball

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary * Based on 128Mbit RDRAM D-die for short channel Datasheet 1.4 ver.


    Original     		PDF K4R271669E 128Mbit

    Untitled

    Abstract: No abstract text available
    Text: Primarily 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.1 Sep 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4D263238I-VC 128Mbit 144-Ball

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238I-UC 128Mbit GDDR SDRAM Revision 1.1 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4D263238I-UC 128Mbit

    Untitled

    Abstract: No abstract text available
    Text: K4S280432E CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 1.0 Nov. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev.1.0 Nov. 2002 K4S280432E CMOS SDRAM Revision History Revision 1.0 Nov., 2002


    Original     		PDF K4S280432E 128Mbit A10/AP

    K4D263238G-VC33

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 February 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238G-GC 128Mbit 32Bit 144-Ball 200MHz/ 166MHz K4D263238G-VC2A K4D263238G-VC33. K4D263238G-VC33

    Untitled

    Abstract: No abstract text available
    Text: Target spec 128M DDR SDRAM K4D261638E 128Mbit DDR SDRAM 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM Revision 0.3 December 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.3 Dec. 2002


    Original     		PDF K4D261638E 128Mbit 16Bit K4D261638E K4D261638E-TC33/36/40/50 K4D261638E-TC33 K4D261638E-TC36 66pin 65TYP

    tsop-ii 66 JEDEC TRAY

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 April 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GL36 K4D263238E-GC25