1230 IF FM AMPLIFIER Search Results

bl-13 korin giken

Abstract: LA3401 csb456f10 1231N SANYO A 1231N CBS456F11 CSB456F 11typ Murata LA1265 LA1235 csb456f11
Contextual Info: Ordering number:ENN1868C Monolithic Linear IC LA3401 VCO Non-Adjusting PLL FM MPX Stereo Demodulator with FM Accessories Features [LA3401] 22 12 0.25 • VCO non-adjusting function. • PLL MPX stereo demodulator. • Gain variable type post amplifier. • FM-AM changeover.

Contextual Info: 7 ~ 7 ^ -Q 9 ~ ô [ 11/89 ^ 74 -if s r W' COMPONENTS nauG H H 2225-KM artin Avenue, Santa Clara, CA 95050 408 492-1400 FAX (408)492-1500 10 to 2000 MHz TOS Cascadable Amplifier AC2066 (Typical Values) High Gain - Two S tag es .

BY1230

Abstract: 1000 divider
Contextual Info: Carradio IC FM Car Radio IC with PLL TUA 4401K Specification 1 B6CA Features • Double balanced RF mixer with low noise figure, high IP3 and wide dynamic range • Strictly symmetrical RF circuitry • IF amplifier with adjustable gain • 7 stage limiter amplifier with dB linear fieldstrength output

Contextual Info: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

UN2910

Abstract: EIMAC Application Bulletin 4CX25 SK-320 ELECTRONIC REGULATOR EIMAC Application Bulletin #20 Eimac 450 SK-360 vacuum tube amplifier 25-KILOWATTS
Contextual Info: The EIMAC 4CX25,000C is a ceramic/metal power tetrode intended for use as a VHF power amplifier. It features a type of internal mechanical structure which results in high rf operating efficiency. Low rf losses in this structure permit operation at full ratings to 110 MHz.

A4514

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

z40 mosfet

Abstract: MRF19120
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

226 35K

Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

c38 transistor

Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K

Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

FP24 MIXER DATA

Abstract: TUA4401 PH01 Capacitance Varactor Diode KV
Contextual Info: Carradio IC FM Car Radio IC with PLL TUA 4401 Specification 1 B6CA Features • Double balanced RF mixer with low noise figure, high IP3 and wide dynamic range • Strictly symmetrical RF circuitry • IF amplifier with adjustable gain • 7 stage limiter amplifier with dB linear fieldstrength output

Contextual Info: Raytheon Electronics Semiconductor Division ANALOG R C 2211 FSK D em odulator/Tone D ecoder Features • Wide frequency range - 0.01 Hz to 300 kHz • Wide supply voltage range - 4.5 V to 20V • DTL/TTL/ECL logic compatibility • FSK demodulation with carrier-detector

old fm radio diagram

Abstract: digital TUNING FM RADIO RECEIVER hp 2539 PM3295A TEA6821T AV41 DIGITAL FM RADIO v44 diode FM/AM HF AMPLIFIER HP 2530
Contextual Info: Philips Semiconductors Preliminary specification ICE car radio TEA6821T FEATURES GENERAL DESCRIPTION • FM mixer for conversion from FM IFi = 72.2 MHz to FM IF2 = 10.7 MHz « AM mixer for conversion from AM IF1 = 10.7 MHz to AM IF2 = 450 kHz • FM IF gain stage

old fm radio diagram

Abstract: 1230 if fm amplifier digital TUNING FM RADIO RECEIVER AUTO SEARCH TUNING FM RADIO RECEIVER philips ic fm am receiver pin voltage of ic 393 AM/FM tuning capacitor stereo to 5.1 converter circuit diagram FM receiver car FM Stereo Decoder Integrated Circuit 16 pin
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA6821T ICE car radio Preliminary specification File under Integrated Circuits, IC01 September 1993 Philips Semiconductors Preliminary specification ICE car radio TEA6821T FEATURES General • FM mixer for conversion from FM IF1 = 72.2 MHz to FM

old fm radio diagram

Abstract: stereo to 5.1 converter circuit diagram TEA6821T VSO56 1230 if fm amplifier VP85 TEA6811T V444
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA6821T ICE car radio Preliminary specification File under Integrated Circuits, IC01 September 1993 Philips Semiconductors Preliminary specification ICE car radio TEA6821T FEATURES General • FM mixer for conversion from FM IF1 = 72.2 MHz to FM

PM3295A

Abstract: 0C76 7110F diode ko 474 TEA6821T old fm radio diagram max 474 equivalent ic v474 mai56 TEA6811T
Contextual Info: Philips Semiconductors Preliminary specification ICE car radio TEA6821T FEATURES GENERAL DESCRIPTION • FM mixer for conversion from FM IF 1 = 72.2 MHz to FM IF 2 = 10.7 MHz « AM mixer for conversion from AM IF 1 = 10.7 MHz to AM IF2 = 450 kHz • FM IF gain stage

V43A

Abstract: old fm radio diagram TEA6824T MHA202 MHA193
Contextual Info: Philips Semiconductors Preliminary specification In Car Entertainment ICE car radio TEA6824T FEATURES • FM mixer for conversion from FM-IFi = 72.2 MHz to FM-IF2 = 10.7 MHz • AM mixer for conversion from AM-IFi = 10.7 MHz to AM-IF2 = 450 kHz BUS • FM-IF gain stage

226 35K capacitor

Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

capacitor 226 35K

Abstract: R 226 35k 226 35K capacitor
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

z40 mosfet

Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

MRF19120

Abstract: Z25 transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110