1210 MEMORY 12 Search Results

1206 footprint dimension

Contextual Info: Low Profile Ceramic Chip Capacitors NMC-E Series CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210 FOOTPRINT

1206 footprint dimension

Abstract: 1206Z5U104
Contextual Info: Low Profile Ceramic Chip Capacitors NMC-E Series FEATURES • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210

Contextual Info: Low Profile Ceramic Chip Capacitors NMC-E Series FEATURES CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U DIELECTRIC DECOUPLING CAPACITOR FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 1206 AND 1210 FOOTPRINT •DESIGNED TO BE MOUNTED BENEATH A PLASTIC SURFACE

A-18

Contextual Info: Index <D– Fetch<Dis mnemonic 13-15 > connection symbol 11-4, 16-3 >D– (Fetch>Dis) mnemonic 13-15 0 connection symbol 5-7 2ndWord mnemonic 13-14 2w– (2ndWord) mnemonic 13-14 32-bit counter, configuring 15-12 to 15-13 A Absolute mode 9-3, 14-17, C-1

MS-1210 IC

Contextual Info: A A CALIFORNIA MICRO DEVICES CORP. 2000 WEST 14TH STREET TEMPE, ARIZO NA 85281 CM D C M 1210 M ic r o c ir c u CMOS Nonvolatile Controller Circuit Operation Features Makes volatile nonvolatile

Contextual Info: Chapter 12 Defining Events The XDS522A is an event-driven tool that allows you to monitor activity on the buses in the SE device: - Program address bus - Program data bus - Data address bus - Data data bus The XDS522A detects the execution of instructions on these buses. In addition, you can use up to 16 external probes to monitor other parts of your target

A18T

Abstract: 1X16
Contextual Info: TO SHIBA TC58FVT800/B800F/FT-85#-10#-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable

A18T

Abstract: 1X16
Contextual Info: TOSHIBA TC58FVT800/B800F/FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable

WPCM450RA0BX

Abstract: WPCM450 lga 1155 socket intel i5 PWS-1K62P-1R WPCM450R nuvoton TPM 1155 lga socket Matrox g200eW SC938
Contextual Info: Contact Us Advanced Search Search Reseller Resource Center SuperServer 5037MC-H8TRF Products Systems MicroCloud [ 5037MC-H8TRF] Key Features per node 1. Intel Xeon® processor E3-1200 family; socket H2 (LGA 1155) Integrated Board 2. 2x 3.5" Hot-swap SATA3 (6 Gbps)

Contextual Info: SURFACE MOUNT LED LAMP SUPER BRIGHT 1210 QTLP650C-RY Red/Yellow QTLP650C-RAG Red/Yellow-Green PACKAGE DIMENSIONS 0.127 3.2 1 3 2 4 0.107 (2.7) TOP CATHODE MARK 0.080 (2.0) 0.043 (1.1) 0.024 (0.6) SIDE 0.083 (2.1) Ø0.019 (0.5) 4X 0.054 (1.4) 0.020 (0.5) 0.087 (2.2)

Contextual Info: A B C D E REVISION HISTORY ECO REV _ RTR1 RTR3 OPT SVIN RSS1 VIN 3 4 5 6 TRACK EXT SS INT 4.7M U1 LTC3618EUF PGOOD1 VIN 2.25V - 5.5V 100k E5 E6 CIN6 100uF GND 18 VIN + CIN5 100uF OPT CIN4 22uF 6.3V 1206 + CIN3 22uF 6.3V 1206 CIN2 22uF 6.3V 1206 21 22 CIN1

Contextual Info: TOSHIBA TC58FVT800/B800F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only ele ctrically erasable and program m able

kemet c.93

Contextual Info: General Purpose, High Stability and AC Line EMI Suppression LDB Series Unencapsulated Winding, Size 1206 – 1812, 16 & 50 VDC Overview Applications Polyphenylene sulphide PPS film capacitor for surface mounting. Typical applications include timing, filtering and use as a memory

Contextual Info: General Purpose, High Stability and AC Line EMI Suppression LDB Series Unencapsulated Winding, Size 1206 – 1812, 16 & 50 VDC Overview Applications Polyphenylene sulphide PPS film capacitor for surface mounting. Typical applications include timing, filtering and use as a memory

LDBAA2390

Abstract: DBCB2220 LDBCB2390 LDBAA2220 LDBAA2120 DBAA2270 LDBCA2100 LDBCB2220 LDBCC3100 LDBAB3100
Contextual Info: General Purpose, High Stability and AC Line EMI Suppression LDB Series Unencapsulated Winding, Size 1206 – 1812, 16 & 50 VDC Overview Applications Polyphenylene sulphide PPS film capacitor for surface mounting. Typical applications include timing, filtering and use as a memory

7500FE

Abstract: ARM7500FE ARM FPA 1838 infrared FPA11 arm processor 300D B-01 str 1229 0077B
Contextual Info: ARM 7500FE Data Sheet Document Number: ARM DDI 0077B Issued: September 1996 Copyright Advanced RISC Machines Ltd ARM 1996 All rights reserved ENGLAND GERMANY Advanced RISC Machines Limited 90 Fulbourn Road Cherry Hinton Cambridge CB1 4JN UK Telephone: +44 1223 400400

Ras 1210

Abstract: 2332 prom mar 552 Marking code 016f CS25E marking code 576 p 0118 da a 214 renesas tioca hd64f2339 H0050
Contextual Info: REJ09B0245-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2339 Group 16 Hardware Manual

sensor book

Abstract: 6a20e Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DS1210 DALLAS SEMICONDUCTOR DS 1210 Nonvolatile Controller Chip PIN ASSIGNMENT FEATURES • Converts CM OS RAMs into nonvolatile memories v cco £ • Unconditionally write protects when V c c is out of tolerance 7 VBAT2 TOL £ 3 6 ] CEO GND [[ 4 5 J CË VBAT1

8X13

Abstract: T15V256B
Contextual Info: tm TE CH Preliminary T15V256B 32K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 12/15ns The T15V256B is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 2.7V to 3.6V power

TSO-C16

Contextual Info: RELIABILITY MONITOR SAMPLING PLAN Begins 10/97 PRODUCT FAMILY TECHNOLOGY ASSEMBLY/ALT 1991 AUTO. ID. Battery 2401 AUTO. ID. 0.8 Ox Ni 2502 AUTO. ID. 0.8 Ox Ni EPROM 2502 AUTO. ID. 0.8 Ox Ni EPROM 1210 BAT. BACK. 3.0 Ox Ni 1232 CPU SUP. 3.0 Ox Ni 1233 CPU SUP.

1210 Memory 12

Contextual Info: RELIABILITY MONITOR SAMPLING PLAN PRODUCT FAMILY TECHNOLOGY ASSEMBLY/ALT 1991 AUTO. ID. Battery 2401 AUTO. ID. 0.8 Ox Ni 2502 AUTO. ID. 0.8 Ox Ni EPROM 2502 AUTO. ID. 0.8 Ox Ni EPROM 1210 BAT. BACK. 3.0 Ox Ni 1232 CPU SUP. 3.0 Ox Ni 1233 CPU SUP. 1.2 Ni 1000

2181a

Abstract: SOIC208 hyundai SAMPLING PLAN
Contextual Info: RELIABILITY MONITOR SAMPLING PLAN PRODUCT FAMILY ASSEMBLY PACKAGE QUANTITY FREQUENCY 1992 2401 2502 1210 1232 1233 1000 1267 1669 1868 232A 5000T 5002M 80C320 1225 1230 2250 / 2290 2107A 21S07A 2165 / 2175 2180A / 2181A 1620 12885 12887 1302 1585 1643 AUTO. ID.

Architecture of TMS320C67X

Abstract: PCI1221 catalyst research corp battery PCI1210 java card 1997 TMS320 TMS626812B TNETE2008 TNETE2101 TNETX3270
Contextual Info: 4 ▼ INTEGRATION DECEMBER 1997 PCI bus HOT NEWS Continued from page 2 video while minimizing bus traffic on the PCI bus. The 1221 provides two slots for CardBus or PC Card modules; the 1210 supports one. By providing just one slot, the 1210 addresses the emerging