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    CEP05P03

    Abstract: S800C-D
    Text: CEP05P03 PRELIMINARY Single P-Channel Enhancement Mode MOSFET FEATURES • -3 0 V , - 4 .9 A , RDS ON =70m Q D @ Vgs=-1 0 V Rds(on)=120itiQ @ V gs =-4.5V • Super high dense cell design for extremely low R d s (on>. • High power and current handling capability.


    OCR Scan     		PDF CEP05P03 120mQ O-220 O-220 CEP05P03 S800C-D