80C51
Abstract: 80C562 83C562 8XC562 S80C562-4A68 S83C562-4A68 ebft
Text: • 711062b ÜDbbSTG MfiS ■ P H I N Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 80C562/83C562 Single-chip 8-bit microcontroller with 8-bit A/D, capture/compare timer, high-speed outputs, PWM DESCRIPTION
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711065b
80C562/83C562
8XC562)
80C51
83C562/83C562
80C51.
8XC562
83C562)
80C562
83C562
S80C562-4A68
S83C562-4A68
ebft
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7480N
Abstract: FJH191 FJH191A H191A
Text: T.T.L. GATED FU LL ADDER FJHI9I FJHI9IA Corresponds to 74 Series type 7480N TEN TA TIV E DATA T h e s e d e v ic e s a r e t r a n s i s t o r - t r a n s i s t o r lo g ic b in a r y fu ll a d d e r s , w ith g a te d c o m p le m e n ta r y in p u ts, c o m p le m e n ta ry su m m a tio n 2 a n d 2 o u tp u ts, a n d in v e r te d c a r r y
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7480N
FJH191
7480N.
O-116
14-lead
FJH191A
H191A
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AX764
Abstract: No abstract text available
Text: 19-0176; R e v 0; 6/94 y k M X iA i -5V/-12V /-15V or A djustable, High-Efficiency, Low IQ DC-DC In verters _ Features ♦ High Efficiency for a W ide Range of Load Currents The input voltage range is 3V to 16V. The output volt age is preset at -5V MAX764 , -12V (MAX765), or -15V
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-5V/-12V
/-15V
MAX764/MAX765/MAX766
120fiA
/-12V
X764/M
X765/M
MAX766CSA
AX764
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Microwave Semiconductor
Abstract: TIM1414-4-252
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB
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TIM1414-4-252
120mA
-120fiA
case-120fiA
Microwave Semiconductor
TIM1414-4-252
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sma Mu diode
Abstract: 7400N 7401N 7402N 7403AN 7403N 7404N 7405AN 7405N 7420N
Text: IN TEG RATED C IR C U IT S LIST OF C O M P A R A B L E TYPES T T L RANGE COM M ERCIAL V ERSIO N S Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 A N 7442N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
sma Mu diode
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Goldstar prime 2
Abstract: goldstar gm16c450 prime2 prime3b Goldstar prime GOLDSTAR GD75188 GM16C550 gm82c803a 8086 assembly prime number GM82C803
Text: GM82C803A/B GoldStar FDC, UARTS with FIFO, EPP/ECP, IDE Controller GOLDSTAR ELECTRON CO., LTD. General Description Features T he G M 82C803A/B chip rep laces w ith a single 100 pin chip, a floppy d isk co n tro ller FDC w ith data separator, tw o UARTs(GM16C550), one IEEE
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GM82C803A/B
GM16C550)
GM82C803
Goldstar prime 2
goldstar gm16c450
prime2
prime3b
Goldstar prime
GOLDSTAR GD75188
GM16C550
gm82c803a
8086 assembly prime number
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB
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120mA
-120fiA
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MQ 6 gas sensor
Abstract: bq2011 S280 3dt1
Text: b q 2011 BENCHMARQ Gas Gauge IC Features General Description >• Conservative an d repeatable m easurem ent of available charge in rechargeable batteries The bq2011 Gas Gauge IC is intended for battery-pack installation to m ain ta in an accurate record of a b attery’s
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bq2011
120fiA
16-pin
bq2011
00031D1
MQ 6 gas sensor
S280
3dt1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-4-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA RF PERFORMANCE SPECI ICATIONS Ta=25 °C CHARACTERISTICS SYMBOL CONDITION UNIT Output Power at ldB PldB dBm Gain Compression Point VDD=9V Power Gain at ldB GldB f= 13.75-14.5GHz dB
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120mA
-120fiA
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Untitled
Abstract: No abstract text available
Text: BENCHMARQ b q 2 1 Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries The bq2010 Gas Gauge IC is intended for battery-pack or in-sys tem installation to m aintain an accurate record of a b a tte ry ’s
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bq2010
120fiA
137001e]
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BUF601
Abstract: No abstract text available
Text: MPC104 BURR-BROWN H D AVAILABLE IN DIE Wide-Bandwidth 2 x 1 VIDEO MULTIPLEXER FEATURES • BANDWIDTH: 210MHz 1.4Vp-p • LOW INTERCHANNEL CROSSTALK: —79dB (30MHz, SO); -77dB (30MHz, DIP) • LOW SWITCHING TRANSIENTS: +13mV/-~4mV • LOW DIFFERENTIAL GAIN/PHASE
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MPC104
210MHz
30MHz,
-77dB
13mV/-
MPC104
BUF601
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evic vt 60w
Abstract: LM1040 Transistor Shortform Datasheet & Cross References TRANSISTOR C 6090 EQUIVALENT 6 pin TRANSISTOR SMD CODE CAA Fairchild Databook LMF120 lm331 equivalent LM1819 Harris Semiconductor LF124
Text: A Corporate Dedication to Quality and Reliability National Sem iconductor is an industry leader in the manufacture of high quality, high reliability integrated circuits. We have been the leading proponent of driv ing down 1C defects and extending product lifetim es.
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7555 low power timer ic
Abstract: IC 7555 pin IC 7555 7555 timer ic icm 7556 timer 7555 timer astable multivibrator icm7555 SE 7555 7555 7555 monostable mode
Text: G E SOLID STATE D 1 D E | 3fi7S0fll QQ1131fl 5 | Q GENERAL DESCRIPTION FEATURES The ICM7555/6 are CMOS RC timers providing signifi cantly improved performance over the standard S E /N E 555/6 and 355 timers, while at the same time being direct replacements for those devices in most applications.
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QQ1131fl
755S/IC
7555/IC
ICM7555/6
T-51-19
7555 low power timer ic
IC 7555 pin
IC 7555
7555 timer ic
icm 7556 timer
7555 timer astable multivibrator
icm7555
SE 7555
7555
7555 monostable mode
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lb233
Abstract: p8xc552 P80CE598FHB
Text: Short form Product specification Philips Semiconductors Microcontroller Products 8-bit microcontroller with on-chip CAN 1.0 2.0 FEATURES • 80C51 central processing unit CPU • 32 kbyte on-chip ROM (EPROM), externally expandable to 64 kbyte • 2 x 256 byte on-chip RAM, externally
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P8xCE598
80C51
16-bit
10-bit
lb233
p8xc552
P80CE598FHB
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