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    Vishay Intertechnologies CRCW0603511RFKEA

    Thick Film Resistors - SMD 1/10watt 511ohms 1%
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    TTI CRCW0603511RFKEA Reel 975,000 5,000
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    Vishay Intertechnologies CRCW0805511RFKEA

    Thick Film Resistors - SMD 1/8watt 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW0805511RFKEA Reel 410,000 5,000
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    KOA Speer Electronics Inc RK73H1JTTD5110F

    Thick Film Resistors - SMD 1/10watts 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RK73H1JTTD5110F Reel 340,000 5,000
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    Vishay Intertechnologies CRCW1206511RFKEA

    Thick Film Resistors - SMD 1/4watt 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW1206511RFKEA Reel 325,000 5,000
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    Kyocera AVX Components TAJA105K016RNJ

    Tantalum Capacitors - Solid SMD 16V 1uF 10% 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TAJA105K016RNJ Reel 230,000 2,000
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    11OHMS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    types of transistors

    Abstract: BFP405 VPS05605 internal circuit diagram of choke BCR410W AN064 RF Transistor reference SOT343 C1 c4 rf amplifier
    Text: Application Note No. 064 Silicon Discretes Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits Introduction 3 Low supply voltages in mobile electronic devices increasingly jeopardize your efforts to supply your RF amplifiers with stable bias current. Most of the commonly


    Original     		BCR410W BFP405 BFP405, VPS05605 AN064 BFP405 BCR410W types of transistors VPS05605 internal circuit diagram of choke AN064 RF Transistor reference SOT343 C1 c4 rf amplifier PDF

    DIM600XSM45-F000

    Abstract: 110nF
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25832) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


    Original     		DIM600XSM45-F000 DS5874-1 LN25832) DIM600XSM45-F000 110nF PDF

    DIM600NSM45-F000

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.1 February 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		DIM600NSM45-F000 DS5873-1 LN24464) DIM600NSM45-F000 PDF

    Untitled

    Abstract: No abstract text available
    Text: HV219 HV219 Low Charge Injection 8-Channel High Voltage Analog Switch Features General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω Low parasitic capacitance DC to 10MHz analog signal frequency


    Original     		HV219 HV219 dissipation-10 10MHz -60dB 28-Pin 48-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		DIM600NSM45-F000 DS5873-1 LN24760) DIM600NSM45-F000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Summary Sheet HV219 Low Switch Resistance, Low Charge Injection, 8-Channel, High Voltage Analog Switch IC LATCHES DIN Applications ‰ Medical ultrasound imaging ‰ Nondestructive evaluation LEVEL SHIFTERS OUTPUT SWITCHES D LE CL SW0 D LE CL SW1 D LE


    Original     		HV219 48-lead 28-lead HV219 med28-lead HV219FG HV219PJ PDF

    110nF

    Abstract: DIM600NSM45-F000
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		DIM600NSM45-F000 DS5873-1 LN24760) 110nF DIM600NSM45-F000 PDF

    ge traction motor

    Abstract: DIM600XSM45-F000
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module


    Original     		DIM600XSM45-F000 DS5874-1 LN24724) ge traction motor DIM600XSM45-F000 PDF

    DIM600NSM45-F000

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.4 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25833) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


    Original     		DIM600NSM45-F000 DS5873-1 LN25833) DIM600NSM45-F000 450ibility PDF

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: HV20220 HV20220FG HV20220PJ HV219 HV219PJ
    Text: HV219 HV219 Initial Release Low Charge Injection 8-Channel High Voltage Analog Switch Features ! ! ! ! ! ! ! ! ! ! ! General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω


    Original     		HV219 dissipation-10 10MHz -60dB HV219 48-Pin A042705 DC 5V to DC 100V CIRCUIT DIAGRAM HV20220 HV20220FG HV20220PJ HV219PJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.2 May 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25346) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


    Original     		DIM600XSM45-F000 DS5874-1 LN25346) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.3 April 2007 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


    Original     		DIM600NSM45-F000 DS5873-1 LN25242) 650bility PDF