11IMETER Search Results

O-20-A

Contextual Info: DATASHEET P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS F ie ld E ffe c t T ra n sis­ PACKAGE DIMENSIONS to r designed fo r DC/DC c o n ve rter and power management in mi 11imeter a p p lic a tio n s o f notebook computers.

Contextual Info: 0ÆRJLIQHT O EVERLIGHT ELECTRONICS CO.,LTD. Device 5.0mm Round MODEL NO : Type LED Number : nm : Page : 1/4 1.A11 dimensions are mi 11imeters inch , • Audio Equipment • Moni tor tolerance is 0.25 mm except be specified. 2.An epoxy meniscus may extend about is

MIL-S-19500/578

Abstract: JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 Sep 94. INCH-POUND MIL-S-19500/578B 8 June 1994 SUPERSEDING MIL-S-19500/578A 19 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, SILICON, SUITCHING

5962-86032

Abstract: CMGA5-P114
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA A Inactive device 01 for new design. Add device 03. Upgrade to full military temperature range. Change drawing CAGE code. Editorial changes throughout. 88-04-15 W. Heckman B Add case outline Y. 89-09-08 W. Heckman

1N5A

Abstract: SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002
Contextual Info: MIL-M-385I0/190C 22 October 1986 suPERstunrsMIL-M-38510/190B 10 July 1984 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC This specification is approved for use by all Depart­

1h31

Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
Contextual Info: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,

5962-9206103HMX

Abstract: NHI-1573 5962-9206103HZX TXAL 808 B qml-38535 MR63147MFM-2 NHI-1559 1594F MR63147MPS NHI158
Contextual Info: REVISIONS D E S C R IP T IO N LTR DATE YR-MO-DA APPROVED A Add device type 02. Make corrections to paragragh 1.3 and table I. Add waveform distortion test to table 1. The entire document has been through rewrite. 93-06-15 K. A. Cottongim B Add vendor CAGE number 57363. Add device types 03, 04, 05, and 06. Add

qml-38535

Abstract: LT1078 LT1078A LT1079 LT1079A
Contextual Info: REVISIONS LTR DESCRIPTION Add device types 03 and 04. TABLE I. DATE Changes to Add case outline X. Inactivate case outline G. Make changes to 1.2.4, FIGURE I, and FIGURE 2. APPROVED YR-MO-DA 93-07-06 M. A. FRYE 95-06-30 M. A. FRYE THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

TL378A

Abstract: s-band magnetron M1461
Contextual Info: M 1 4 6 1 S-Band Magnetron G E N E R A L D ES C R IP T IO N M1461 is a fixed frequency pulsed type S-band magnetron, desined to operate in the frequency range of 3025 to 3075 MHz with a peak output power of 50 kW.It is waveguide output type and conduction cooled. A permanent magnet is packaged as part of the magnetron.

SVI 3206

Abstract: SVI 3206 D svi 3201 svi 3001 2N910 JANTX 2N910S 2N911 2N912 2N910 2N911S
Contextual Info: I— - 1 I- 1 | Thedocueentetion I and .process |conversion»çasores<nac*#sary to | | comply *ith.this revision.shall be | completed by 5 May 1995 | INCH-POUND | 1- - — ' j MIL-S-19500/274CCER I -

irf48n

Abstract: 79M15 mfd navy MIL-M-38510/115 79m05 IRF 24N 2N6296 TX2N4033
Contextual Info: MIL-M-38510/115 27 A pril 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for fixed output, monolithic

cdq8

Abstract: qml-38535 28F016 mil-h-38534 RHA level D XX74h xx96H QML-38534
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET 35 REV SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 4 5 6 7 8 9 10 11 12 13 14 REV REV STATUS OF SHEETS SHEET PREPARED BY Gary L. Gross PMIC N/A STANDARD MICROCIRCUIT DRAWING

EL 14v 4c

Abstract: LG E50 E41-E42 MIL-STD-8 7e46 q 1257 K5 transistor marking E39 E43 marking ic isl 887 bbc tq2
Contextual Info: M I L - M - 38510/118 31 March I 98 O MI LIT ARY S P E CIF ICA TIO N M I C R O C IR CUI TS, LINEAR, VOLTAGE R EGU LATORS, A DJU STABLE, NEGATIVE, MON O L I T H I C SILICON This s p e c i f i c a t i o n is approv ed for use by all D e p a r t ­ ments and

mb7138e

Abstract: mb7138
Contextual Info: FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY M B 7 1 3 7 E /H M B 7 1 3 8 E /H /Y M B 7 1 3 7 E -S K /H -S K M B 7 1 3 8 E -S K /H -5 K /Y -5 K Decem ber 1 987 E d itio n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 OWRDSX 8 BITS T h e F u jits u M B 7 1 3 7 and M B 7 1 3 8 are high speed S c h o ttk y T T L e le c tric a lly

IN3070

Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,

mc 4011

Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT

qml-38535

Abstract: 87C51 T0D47Q 5962-87684 ccpm
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M0-DA A Add case outline U. Add vendor cage 18325. Add programming method B. Changes 4.3.1c and 4.3.1e. Editorial changes throughout. 89-03-01 W. Heckman B Add device type 02, editorial changes throughout. Add test

1H28

Abstract: IN4557B IN4557 MR 4011 IN4502 TNR*G CI 4066 vol 1N2804 1N2811 1N2814
Contextual Info: MIL SP EC S IC1DDDD12S 0D0Q773 b | • " T-ll-lS MIL-S-19500/114E AMENDMENT 4 21 M a r c h 1 9 8 4 SUPERSEDING AMENDMENT 3 3 November 1982 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , D I O D E , S I L I C O N , V O L T A G E R E G U L A T O R B A N D RB T Y P E S ,