XX74H Search Results

CI 4066 vol

Abstract: 74HCT logic family specifications HCT CMOS family characteristics 74HCMOS MGK563 hcmos family CI 4016 74HCT Logic Family Specification CMOS Logic Family Specifications F TTL family characteristics
Contextual Info: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 Philips Semiconductors FAMILY SPECIFICATIONS HCMOS family characteristics A subset of the family, designated as XX74HCTXXXXX,

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

DT28F016SA

Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Contextual Info: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate

DD28F032SA

Contextual Info: REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or xt6 Operation ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ 1 Million Typical Erase Cycles per Block ■ 56-Lead, 1.2 x 14 x 20 mm Advanced

DT28F016SV080

Contextual Info: in t e i 16-MBIT Flash File MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • Sm artVoltage Techn o logy — U ser-Selectab le 3.3 V or 5 V V c c — U ser-Selectab le 5 V or 12 V V PP ■ Backw ards-Com patible with 28F016SA ,

vhdl code for multiplexer 16 to 1 using 4 to 1

Abstract: 0528 BUS ARCHITECTURE OF MICROPROCESSOR 68000 R 2.8 no pinout 4 vhdl code 32 bit processor 68000 28F008SA 28F016SA 28F016SV 28F032SA
Contextual Info: E ADVANCE INFORMATION 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY SmartVoltage Technology  User-Selectable 3.3V or 5V VCC  User-Selectable 5V or 12V VPP Backwards-Compatible with 28F016SA, 28F008SA Command Set 65 ns Access Time  Multiple Command Execution

28F008SA

Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA NS480
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block

Contextual Info: in te l DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V V qc User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block 56-Lead, 1.2 x 14 x 20 mm Advanced

Contextual Info: in te i SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or x16 Operation _ ^ ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ Revolutionary Architecture

28F008SA

Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA BSR4 equivalent 28F64
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block

DT28F016

Abstract: xx96H
Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 16-MBIT FlashFile MEMORY 28F016S V Includes C om m ercial and Extended Temperature Specifications • SmartVoltage Technology — User-Selectable 3.3 V or 5 V V cc - User-Selectable 5 V or 12 V V PP

297372

Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — U s er-S electa b le 5 V o r 12V V PP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set

ap393 "pin compatible"

Abstract: 297372
Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rato ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set

28F008SA

Abstract: 28F016SA 28F016SV 28F160S3 28F160S5 28F320S3 28F320S5 28f320s5 cross e28f016
Contextual Info: SEE NEW DESIGN RECOMMENDATIONS i n t e i REFERENCE ONLY 16-MBIT FlashFile MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — User-Selectable 3.3 V or 5 V Vcc - User-Selectable 5 V or 12 V V PP ■ 65 ns Access Time

74HC9046

Abstract: 74hct4050 74HC273 CMOS TTL Logic Family Specifications 74hc245 74HCT297 74hc154 application 74hct133 74hc297 application notes 74HC7014 74HCT299
Contextual Info: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 INTEGRATED CIRCUITS DATA SHEET Package outline drawings January 1996 File under Integrated Circuits, IC06 Philips Semiconductors

29059

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst W rite Transfer Rate

PEF 22552 E V1.1

Abstract: PEF 22552 PEF22552E
Contextual Info: D a t a S h e e t , R e v . 1 . 1 , N o v . 2 00 5 DualFALC D u a l E 1 / T 1/ J 1 F r a m e r a n d L i n e I nt e r f ac e C o m p o n en t f o r L o n g- a n d S h o r t - H a u l A p p l i c a t i o ns P E F 22 5 5 2 , V e r s i o n 1 . 1 C o m m u ni c a t i o n s

K9K1G08U0A-YCB0

Contextual Info: K9K1G08U0A-VCB0,VIB0,FCB0,FIB0 K9K1G16U0A-YCB0,YIB0,PCB0,PIB0 K9K1G08U0A-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Initial issue. Remark Mar. 17th 2003

Contextual Info: 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications • User-Selectable 3.3V or 5V Vcc ■ Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: in te l P R S U IM IO IiQ A Ifflf 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY • ■ ■ ■ ■ User-Selectable 3.3V or 5V Vcc ■ Revolutionary Architecture User-Configurable x8 or x16 Operation — Pipelined Command Execution 70 ns Maximum Access Time

Contextual Info: P R iy if flD I iO M Ÿ in te i EXTENDED TEMPERATURE 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Extended Temperature Operation 40°C to +85°C User-Selectable 3.3V or 5V Vcc , „ , . „ User-Configurable x8 or x16 Operation 100 ns Maximum Access Time at 5V

IC 4093

Abstract: K9K1G08U0A K9K1G16U0A 63FBGA K9K1G08Q0A K9K1G08Q0A-GCB0 K9K1G08U0A-YCB0
Contextual Info: Preliminary K9K1G08Q0A K9K1G08U0A K9K1G16U0A FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Mar. 17th 2003 Preliminary 0.1 1. Note is added. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

Contextual Info: AN11044 Pin FMEA for 74HC/74HCT family Rev. 1 — 16 March 2011 Application note Document information Info Content Keywords FMEA, HC, HCT, CMOS Abstract This application note provides a Failure Modes and Effects Analysis FMEA for the NXP Semiconductors’ 74 HC/74HCT family under typical

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS inU REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA User-Selectable 3.3 V or 5 V V cc 28.6 MB/sec Burst Write Transfer Rate Revolutionary Architecture — 100% Backwards-Compatible with Intel 28F016SA — Pipelined Command Execution