11E6
Abstract: 11E1 11E2 11E4
Text: 11E1 - 11E6 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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DO-41
UL94V-O
MIL-STD-202,
11E6
11E1
11E2
11E4
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Untitled
Abstract: No abstract text available
Text: 11E1 - 11E2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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DO-41
UL94V-O
MIL-STD-202,
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11E1
Abstract: No abstract text available
Text: ｓ DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: ｓ DIODE 11E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.21g Rating Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: 11E100-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E100-230
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Untitled
Abstract: No abstract text available
Text: 11E11 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)110m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E11
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Untitled
Abstract: No abstract text available
Text: 11E11-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)110m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E11-230
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Untitled
Abstract: No abstract text available
Text: 11E100 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 11 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A
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11E100
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1
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NE68808
8e-16
8e-15
5e-16
8e-12
55e-12
11e-12
5e-14
29e-12
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Untitled
Abstract: No abstract text available
Text: ÎÏÀ PER I COM PI74FCT163240 I I [ t I 11 I I M 11 I I 11 11 111 M I 111 111 II I I I II I 11 I 11 II 1111 11 ! 11E111 I 11 II 11 111 11 111 i 111 111111 i 1111 111 1111 U 1111 t M 111III M Fast CMOS 3.3V 16-Bit Octal Buffer/Line Driver Product Features:
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48-pin
PI74FCT163240
16-Bit
PS2051A
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Untitled
Abstract: No abstract text available
Text: ia / ioo ~ SILICON RECTIFIER DIODE 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size vt £_ ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7 .027 0.5(.020) ° High Surge Capability DIA 2 .7(.106) d i a MAX U1A 27 (1 .06 ) MIN » 26mm and 52mm Inside Tape Spacing
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bblS123
G0Q23Ã
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11E1
Abstract: 11E2 11E4
Text: SILICON RECTIFIER DIODE 11E1 11E2 11E4 ia / 1 0 0 ~ 4 0 0 v FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 26mm and 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS \ type Voltage Rating
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IA/100
52mra
bbl5123
11E1
11E2
11E4
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AV RF modulator
Abstract: Scans-0017259
Text: EDISWAN 11E16 H.F. DOUBLE TETRODE Indirectly heated TENTATIVE G EN ERA L The 11E16 is an internally neutralised h.f. double tetro d e. It has a centre tapped heater and is intended fo r use as a push-pull am plifier o r frequency treb ler at frequencies up to
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11E16
11E16
AV RF modulator
Scans-0017259
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Ediswan
Abstract: 11E13 Scans-0017259
Text: 11E13 EDISWAN IIEI3 H.F. D O U B LE TETRO D E Indirectly heated TENTATIVE G ENERAL The 11E13 is an indirectly heated, miniature based, h.f. double tetrode. It is internally neutralised and is intended for use as a push-pull amplifier at frequencies up to 225 Mc/s.
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11E13
11E13
Ediswan
Scans-0017259
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Untitled
Abstract: No abstract text available
Text: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S
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11D1475B
11E1475B
IBM11D2475B
IBM11E2475B
72-Pin
IBM11D1475B
QG03fl2Q
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AV RF modulator
Abstract: 11E-15 11E15 Scans-0017259
Text: EDISWAN 11E15 H.F. D O U B LE T ETR O D E Indirectly heated TENTATIVE G EN ER AL The 11E15 is an internally neutralised h.f. double tetrode. It is intended for use as a push-pull amplifier o r frequency trebler at frequencies up to 500 Me,s. R A T IN G S Heater Voltage
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11E15
11E15
AV RF modulator
11E-15
Scans-0017259
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature
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1SS315
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
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SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV277
SV277
SV277
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42c27
Abstract: No abstract text available
Text: T E X A S IN S T R -CASIC/MEMORY} 42 Ô 96Ï725 1 I PROGRAMMABLE L0G|C 42C 27235 TEXAS D E § aTt.l7 aS 0 0 S 7 2 3 S I'NSTR <AS I C /MEMORY TYPES SN54PL333, SN54PL335, SN74PL333, SN74PL335 FIELD-PROGRAMMABLE LOGIC SEQUENCERS D2707r DECEMBER 1982 07 J OR N DUAL-IN-LINE PACKAGE
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SN54PL333,
SN54PL335,
SN74PL333,
SN74PL335
D2707r
PL333
PL33HH
42c27
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV276
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1SV304
Abstract: No abstract text available
Text: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV304
1SV304
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Untitled
Abstract: No abstract text available
Text: 1SV231 TO SHIBA 1 S V2 3 1 TO SHIBA VAR IABLE CAPACITANCE DIODE C ATV TUN IN G . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C 2 V /C 2 5 V = 15 Typ. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
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1SV231
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Untitled
Abstract: No abstract text available
Text: 1SV229 TO SHIBA 1 SV2 2 9 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE Unit in mm Ultra Low Series Resistance : rs = 0.2fl Typ. Useful for Small Size Set M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV229
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