Outline Dimensions
Abstract: CS70
Text: Outline Dimensions Vishay Semiconductors B-8 DIMENSIONS in millimeters inches Ceramic housing 26 (1.023) MAX. 5 (0.20) ± 0.3 (0.01) 10.5 (0.41) DIA. 12 (0.47) MIN. C.S. 70 mm2 245 (9.645) 255 (10.04) 38 (1.5) DIA. MAX. 80 (3.15) MAX. 115 (4.52) MIN. 47 (1.85)
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-16UNF-2A
11-Apr-08
Outline Dimensions
CS70
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JESD22-B102
Abstract: J-STD-002
Text: RS1A thru RS1K Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • High forward surge capability
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
11-Mar-11
JESD22-B102
J-STD-002
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Untitled
Abstract: No abstract text available
Text: VS-SD453N/R Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Stud Version , 400 A, 450 A FEATURES • High power fast recovery diode series • 2.0 s to 3.0 μs recovery time • High voltage ratings up to 2500 V • High current capability
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VS-SD453N/R
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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BYG24D
Abstract: BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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BYG24D
BYG24J
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
BYG24G
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Untitled
Abstract: No abstract text available
Text: RS1A thru RS1K Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • High forward surge capability
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002
JESD22-B102
08-Apr-05
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LST676-P2
Abstract: c250 VLMK31R2S2 LST676-R1
Text: VLMK31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES 19225 DESCRIPTION This device has been designed to meet the increasing demand for AlInGaP technology. The package of the VLMK31. is the PLCC-2. It consists of a lead frame which is embedded in a
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VLMK31.
00lectual
18-Jul-08
LST676-P2
c250
VLMK31R2S2
LST676-R1
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Si4126DY
Abstract: 2936 7406 datasheet 9940 AN609
Text: Si4126DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si4126DY
AN609,
11-Apr-08
2936
7406 datasheet
9940
AN609
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AN609
Abstract: Si4459ADY 284259
Text: Si4459ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si4459ADY
AN609,
11-Apr-08
AN609
284259
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4017 SPICE MODEL
Abstract: AN609
Text: Si4170DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si4170DY
AN609,
11-Apr-08
4017 SPICE MODEL
AN609
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5717
Abstract: AN609
Text: SUM75N15-18P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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SUM75N15-18P
AN609,
11-Apr-08
5717
AN609
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AN609
Abstract: Si7170DP
Text: Si7170DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si7170DP
AN609,
11-Apr-08
AN609
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BYM11-600
Abstract: BYM11-1000 BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
Text: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique
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BYM11-50
BYM11-1000,
RGL41A
RGL41M
MIL-S-19500
J-STD-020,
2002/95/EC
2002/96/EC
DO-213AB
08-Apr-05
BYM11-600
BYM11-1000
DO-213AB
J-STD-002
RGL41M
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marking code 2 SOD523
Abstract: VESD05A1B-02V-GS08
Text: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge e3 > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)
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VESD05A1B-02V
OD523
2002/95/EC
2002/96/EC
VESD05A1B-02V-GS08
08-Apr-05
marking code 2 SOD523
VESD05A1B-02V-GS08
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Untitled
Abstract: No abstract text available
Text: SD200N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types
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SD200N/R
DO-205AC
DO-30)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-SD200N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V • High surge current capabilities • Stud cathode and stud anode version • Standard JEDEC types
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VS-SD200N/R
DO-205AC
DO-30)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SD600N/R Series Vishay Semiconductors Standard Recovery Diodes Stud Version , 600 A FEATURES • • • • • • • • • B-8 Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types
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SD600N/R
SD600N/R
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SD600N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 600 A FEATURES • • • • • • • • • B-8 Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version
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SD600N/R
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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mosfet 4423
Abstract: C 3866 0539 AN609
Text: Si4943CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si4943CDY
AN609,
11-Apr-08
mosfet 4423
C 3866
0539
AN609
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DO301
Abstract: No abstract text available
Text: SD200N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types
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SD200N/R
DO-205AC
DO-30)
11-Mar-11
DO301
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DO-214BA
Abstract: JESD22-B102 J-STD-002 code 67a DO214BA
Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement
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MIL-S-19500
J-STD-020,
2002/95/EC
2002/96/EC
18-Jul-08
DO-214BA
JESD22-B102
J-STD-002
code 67a
DO214BA
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BYG21M
Abstract: vishay MARKING UM SMA BYG21K JESD22-B102 J-STD-002
Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time
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BYG21K
BYG21M
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
18-Jul-08
BYG21M
vishay MARKING UM SMA
BYG21K
JESD22-B102
J-STD-002
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11202-1
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
11-APR-08
05-DEC-07
02-JAN-07
31-MAR-04
17-NOV-99
11202-1
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25t125
Abstract: 25t125 switch V15T16-CC100
Text: REV HONEYWELL PART NUMBER A DOCUMENT 0038847 CHANGED BY PK 11APR08 V15T16-CC100 CHECK ASD 2X 8.30 + 0.15 4.20 2.80 NOTES: A 1. TERMINALS WILL ACCEPT 6 .35 m m WIDE QUICK CONNECT RECEPTACLES AND CO M PLY WITH E N 6 1 0 5 8 -1 REQUIREMENTS. CHARACTERISTICS ELECTRICAL DATA
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V15T16-CC100
11APR08
EN61058-1
100qf
A250V~
25T125
16A1/2HP
125/250VAC
25t125 switch
V15T16-CC100
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