11APR08 Search Results

25t125

Abstract: 25t125 switch V15T16-CC100
Contextual Info: REV HONEYWELL PART NUMBER A DOCUMENT 0038847 CHANGED BY PK 11APR08 V15T16-CC100 CHECK ASD 2X 8.30 + 0.15 4.20 2.80 NOTES: A 1. TERMINALS WILL ACCEPT 6 .35 m m WIDE QUICK CONNECT RECEPTACLES AND CO M PLY WITH E N 6 1 0 5 8 -1 REQUIREMENTS. CHARACTERISTICS ELECTRICAL DATA

Outline Dimensions

Abstract: CS70
Contextual Info: Outline Dimensions Vishay Semiconductors B-8 DIMENSIONS in millimeters inches Ceramic housing 26 (1.023) MAX. 5 (0.20) ± 0.3 (0.01) 10.5 (0.41) DIA. 12 (0.47) MIN. C.S. 70 mm2 245 (9.645) 255 (10.04) 38 (1.5) DIA. MAX. 80 (3.15) MAX. 115 (4.52) MIN. 47 (1.85)

JESD22-B102

Abstract: J-STD-002
Contextual Info: RS1A thru RS1K Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • High forward surge capability

Contextual Info: VS-SD453N/R Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Stud Version , 400 A, 450 A FEATURES • High power fast recovery diode series • 2.0 s to 3.0 μs recovery time • High voltage ratings up to 2500 V • High current capability

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BYG24D

Abstract: BYG24G
Contextual Info: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time

Contextual Info: RS1A thru RS1K Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • High forward surge capability

LST676-P2

Abstract: c250 VLMK31R2S2 LST676-R1
Contextual Info: VLMK31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES 19225 DESCRIPTION This device has been designed to meet the increasing demand for AlInGaP technology. The package of the VLMK31. is the PLCC-2. It consists of a lead frame which is embedded in a

Si4126DY

Abstract: 2936 7406 datasheet 9940 AN609
Contextual Info: Si4126DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

AN609

Abstract: Si4459ADY 284259
Contextual Info: Si4459ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

4017 SPICE MODEL

Abstract: AN609
Contextual Info: Si4170DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

5717

Abstract: AN609
Contextual Info: SUM75N15-18P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

AN609

Abstract: Si7170DP
Contextual Info: Si7170DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

BYM11-600

Abstract: BYM11-1000 BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique

DO-213AA

Abstract: GL34 JESD22-B102 J-STD-002 RGL34A RGL34K
Contextual Info: RGL34A thru RGL34K Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

Contextual Info: SD200N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types

Contextual Info: VS-SD200N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V • High surge current capabilities • Stud cathode and stud anode version • Standard JEDEC types

Contextual Info: SD600N/R Series Vishay Semiconductors Standard Recovery Diodes Stud Version , 600 A FEATURES • • • • • • • • • B-8 Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types

Contextual Info: SD600N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 600 A FEATURES • • • • • • • • • B-8 Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version

mosfet 4423

Abstract: C 3866 0539 AN609
Contextual Info: Si4943CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

DO301

Contextual Info: SD200N/R Series Vishay High Power Products Standard Recovery Diodes Stud Version , 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types

DO-214BA

Abstract: JESD22-B102 J-STD-002 code 67a DO214BA
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

BYG21M

Abstract: vishay MARKING UM SMA BYG21K JESD22-B102 J-STD-002
Contextual Info: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time

11202-1

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C