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    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    CY7C1355C

    Abstract: No abstract text available
    Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead


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    PDF CY7C1355C, CY7C1357C CY7C1355C/CY7C1357C CY7C1355C

    CY7C1382DV33-200BZI

    Abstract: No abstract text available
    Text: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation


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    PDF CY7C1380DV33 CY7C1382DV33 18-Mbit CY7C1380DV33/CY7C1382DV33 CY7C1382DV33-200BZI

    Untitled

    Abstract: No abstract text available
    Text: CY7C1352G 4-Mbit 256 K x 18 Pipelined SRAM with NoBL Architecture 4-Mbit (256 K × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need


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    PDF CY7C1352G CY7C1352G

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)


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    PDF CY7C1347G CY7C1347G

    IS61LPS102418A

    Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
    Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


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    PDF IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 1024K JEDE30 PK13197LQ 5M-1982. IS61LPS102418A IS61LPS25672A IS61LPS51236A IS61LPS51236A-200TQLI 1024Kx18

    N18N1825F1B

    Abstract: N18N1833F1B N18N3625F1B N18N3633F1B
    Text: N18N1825F1B N18N1833F1B N18N3625F1B N18N3633F1B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture Features


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    PDF N18N1825F1B N18N1833F1B N18N3625F1B N18N3633F1B 133MHz N18N1825F1BQ- N18N3625F1BQ- N18N1833F1BF- 165-FPBGA N18N3633F1BF- N18N1833F1B N18N3633F1B

    IS61LPD51218A

    Abstract: IS61LPD25636A IS61VPD25636A IS61VPD51218A
    Text: ISSI IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


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    PDF IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 100-Pin 119-pin 165-pin PK13197LQ 5M-1982. IS61LPD51218A IS61LPD25636A

    IS61LPS25632A

    Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


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    PDF IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PK13197LQ 5M-1982. IS61LPS25632A IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A

    IS64LF12832A-7

    Abstract: is64lf12832a LF12836A E0108 IS61LF12836A-6.5B3
    Text: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


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    PDF LF12832A IS64VF12832A LF12836A VF12836A LF25618A VF25618A 100-Pin 119-pin 165-pin LF12832A, IS64LF12832A-7 is64lf12832a E0108 IS61LF12836A-6.5B3

    Untitled

    Abstract: No abstract text available
    Text: CY7C1361A CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz Fast OE access times: 3.5 ns and 4.0 ns


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    PDF CY7C1361A CY7C1363A 36/512K 100MHz CY7C1361A/CY7C1363A

    Untitled

    Abstract: No abstract text available
    Text: IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM MAY 2007 FEATURES DESCRIPTION • 100 percent bus utilization The 4 Meg 'NLF/NVF' product family feature high-speed, low-power synchronous static RAMs designed to provide


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    PDF IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 100-pin 119-ball 165ball 5M-1982. PK13197LQ

    Untitled

    Abstract: No abstract text available
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


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    PDF IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 100-Pin 119-bC 5M-1982. PK13197LQ

    CY7C1386C

    Abstract: CY7C1387C
    Text: CY7C1386C CY7C1387C 18-Mb 512K x 36/1M x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 225, 200 and 167 MHz • Registered inputs and outputs for pipelined operation


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    PDF CY7C1386C CY7C1387C 18-Mb 36/1M 250-MHz CY7C1386C/CY7C1387C CY7C1386C CY7C1387C

    Untitled

    Abstract: No abstract text available
    Text: IS61NLP25636A/IS61NVP25636A IS61NLP51218A/IS61NVP51218A 256K x 36 and 512K x 18 9Mb, PIPELINE 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION JANUARY 2005 FEATURES DESCRIPTION • 100 percent bus utilization The 9 Meg 'NLP/NVP' product family feature high-speed,


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    PDF IS61NLP25636A/IS61NVP25636A IS61NLP51218A/IS61NVP51218A PK13197LQ 5M-1982.

    CY7C1325G

    Abstract: CY7C1325G-133AXC CY7C1325G-133AXI CY7C1325G-133BGC CY7C1325G-133BGI CY7C1325G-133BGXC CY7C1325G-133BGXI
    Text: CY7C1325G PRELIMINARY 4-Mbit 256K x 18 Flow-Through Sync SRAM Functional Description[1] Features • 256K X 18 common I/O • 3.3V –5% and +10% core power supply (VDD) • 2.5V or 3.3V I/O supply (VDDQ) • Fast clock-to-output times — 6.5 ns (133-MHz version)


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    PDF CY7C1325G 133-MHz 117-MHz 100-MHz 100-pin 119-ball CY7C1325G CY7C1325G-133AXC CY7C1325G-133AXI CY7C1325G-133BGC CY7C1325G-133BGI CY7C1325G-133BGXC CY7C1325G-133BGXI

    Untitled

    Abstract: No abstract text available
    Text: IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A ISSI PRELIMINARY INFORMATION SEPTEMBER 2005 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM FEATURES DESCRIPTION • 100 percent bus utilization The 4 Meg 'NLF/NVF' product family feature high-speed,


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    PDF IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A PK13197LQ 5M-1982.

    CY7C1327B

    Abstract: No abstract text available
    Text: 327 CY7C1327B 256K x 18 Synchronous-Pipelined Cache RAM Features The CY7C1327B I/O pins can operate at either the 2.5V or the 3.3V level. The I/O pins are 3.3V tolerant when VDDQ=2.5V. • Supports 100-MHz bus for Pentium and PowerPC operations with zero wait states


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    PDF CY7C1327B CY7C1327B 100-MHz 166-MHz 166-Mpress

    CY7C1381B-100AI

    Abstract: 381B CY7C1381B CY7C1381B-117AC CY7C1383B
    Text: 381B CY7C1381B CY7C1383B 512 x 36/1M × 18 Flow-Thru SRAM Features • • • • • • • • • • • Fast access times: 7.5, 8.5, 10.0 ns Fast clock speed: 117, 100, 83 MHz Provide high-performance 3-1-1-1 access rate Optimal for depth expansion


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    PDF CY7C1381B CY7C1383B 36/1M CY7C1381B/CY7C1383B x36/1M CY7C1381B-100AI 381B CY7C1381B CY7C1381B-117AC CY7C1383B

    80486 microprocessor block diagram and pin diagram

    Abstract: CY7C1338B
    Text: 338B CY7C1338B 128K x 32 Synchronous-Flow-Through 3.3V Cache RAM Features Functional Description • Supports 117-MHz microprocessor cache systems with zero wait states • 128K by 32 common I/O • Fast clock-to-output times — 7.5 ns 117-MHz version • Two-bit wraparound counter supporting either interleaved or linear burst sequence


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    PDF CY7C1338B 117-MHz 100-pin CY7C1338B 80486 microprocessor block diagram and pin diagram

    CY7C1354C

    Abstract: CY7C1356C
    Text: CY7C1354C CY7C1356C 9-Mbit 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture Functional Description[1] Features • Pin-compatible and functionally equivalent to ZBT™ • Supports 250-MHz bus operations with zero wait states — Available speed grades are 250, 200, and 166 MHz


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    PDF CY7C1354C CY7C1356C 36/512K 250-MHz CY7C1354C CY7C1356C

    CY7C1327G

    Abstract: CY7C1327G-250AXC CY7C1327G-250AXI CY7C1327G-250BGC CY7C1327G-250BGI CY7C1327G-250BGXC CY7C1327G-250BGXI
    Text: CY7C1327G PRELIMINARY 4-Mbit 256K x 18 Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 256K x18 common I/O architecture • 3.3V core power supply • 3.3V / 2.5V I/O operation • Fast clock-to-output times


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    PDF CY7C1327G 250-MHz 225-MHz 200-MHz CY7C1327G CY7C1327G-250AXC CY7C1327G-250AXI CY7C1327G-250BGC CY7C1327G-250BGI CY7C1327G-250BGXC CY7C1327G-250BGXI

    GVT71256ZC36B-7.5

    Abstract: CY7C1356A-100AC CY7C1356A GVT71512ZC18
    Text: PRELIMINARY CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 200, 166, 133, and 100 MHz • Fast access time: 3.2, 3.6, 4.2, 5.0 ns


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    PDF CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256Kx36/512Kx18 GVT71256ZC36B-7.5 CY7C1356A-100AC CY7C1356A GVT71512ZC18

    CY7C1361V25

    Abstract: CY7C1363V25
    Text: C Y 7 C 1 3 6 1 V 25 C Y 7 C 1 3 6 3 V 25 PRELIMINARY ~= C Y P H hbb = 256K x 36 / 512K x 18 Flowthrough SRAM Functional Description Features • Supports 113-MHz bus operations The CY7C1361V25 and CY7C1363V25 are 2.5v, 256K x 36 and 512K x 18 synchronous-flowthrough SRAM designed to


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    PDF CY7C1361V25 CY7C1363V25 113-MHz 117-MHz 100-MHz 80-MHz 100-pin CY7C1361V25 CY7C1363V25