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111111H Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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desfire commands
Abstract: MIFARE DESFire Features and Hints MIFARE DESFire Functional Specification APDU DESFire change key examples MIFARE DESFire Functional Specification Mifare APDU Command DESFire Create File Command native desfire commands desfire Mifare Desfire APDU protocol
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RD700 RD701 M111010 desfire commands MIFARE DESFire Features and Hints MIFARE DESFire Functional Specification APDU DESFire change key examples MIFARE DESFire Functional Specification Mifare APDU Command DESFire Create File Command native desfire commands desfire Mifare Desfire APDU protocol | |
Contextual Info: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance |
OCR Scan |
Am28F010A 32-pin | |
PEC 4179 DIODE
Abstract: 327879-001US
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327879-001US LK100 PEC 4179 DIODE 327879-001US | |
TLC5910Contextual Info: TLC5910 LED DRIVER SLLS392 – NOVEMBER 1999 D D D D D D D D Drive Capability and Output Counts – 80 mA Current Sink x 16 Bits Constant Current Output Range – 5 to 80 mA (Current Value Setting for All Output Terminals Using External Resistor and Internal Brightness Control Register) |
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TLC5910 SLLS392 TLC5910 | |
Contextual Info: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including |
OCR Scan |
Am28F010A 32-pin 16-038-TSOP-2 TSR032â TSR032 | |
842 317 SO8Contextual Info: Intel Communications Chipset 89xx Series Datasheet June 2013 Order Number: 327879-002US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS |
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327879-002US LK100 842 317 SO8 | |
kyocera LCC-32
Abstract: kyocera 48 lead ceramic LCC package MB89120 MB89120A MB89121 MB89123A kyocera 48 lead ceramic CC package 0311012
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DS07-12509-5E MB89120/120A B89121/P131/123A/P133 /125A/P135 /PV130 MB89120 MB89120A MB89120, 21-bit kyocera LCC-32 kyocera 48 lead ceramic LCC package MB89121 MB89123A kyocera 48 lead ceramic CC package 0311012 | |
TLC5910Contextual Info: TLC5910 LED DRIVER SLLS392 – NOVEMBER 1999 D D D D D D D D Drive Capability and Output Counts – 80 mA Current Sink x 16 Bits Constant Current Output Range – 5 to 80 mA (Current Value Setting for All Output Terminals Using External Resistor and Internal Brightness Control Register) |
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TLC5910 SLLS392 TLC5910 | |
Contextual Info: TLC5910 LED DRIVER SLLS392 – NOVEMBER 1999 D D D D D D D D Drive Capability and Output Counts – 80 mA Current Sink x 16 Bits Constant Current Output Range – 5 to 80 mA (Current Value Setting for All Output Terminals Using External Resistor and Internal Brightness Control Register) |
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TLC5910 SLLS392 | |
qt2025
Abstract: amcc qt2025 qt2225 QT2025-1 smd marking 1GE Amcc QT2225 qt2025prk PN-2112 sfp reference qt2025-1 QT2025PxKD
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QT2025PxKD 10Gbps-to-XAUI 10Gbps 10GbE 10GFC 125MHz 25MHz) 25MHz qt2025 amcc qt2025 qt2225 QT2025-1 smd marking 1GE Amcc QT2225 qt2025prk PN-2112 sfp reference qt2025-1 | |
1000BASE-KX Backplane
Abstract: qt2225 qt2025 Amcc QT2225 st smd diode marking code C701 QT2225PRKD amcc qt2025 Auto-Negotiation 10Gbase kr 22W8 10Gbase-kr backplane connector
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QT2225PRKD 10Gbps-to-XAUI 10Gbps 10GbE 10GFC 125MHz 25MHz) 25MHz 1000BASE-KX Backplane qt2225 qt2025 Amcc QT2225 st smd diode marking code C701 amcc qt2025 Auto-Negotiation 10Gbase kr 22W8 10Gbase-kr backplane connector | |
MPC8641DRM
Abstract: rcs 72 MPC8640D TOD 5261 Br e600 MPC8640 MPC8641D MAC13 BCM 7418 gigabyte 945
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MPC8641D MPC8640 MPC8640D MPC8641 MPC8641DRM EL516 MPC8641D II--e600 MPC8641DRM rcs 72 MPC8640D TOD 5261 Br e600 MPC8640 MAC13 BCM 7418 gigabyte 945 | |
MEC0384V1-0000-A99
Abstract: 94v-0 RoHS
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120X120X38 MEC0384V1-0000-A99 D12012760G-00 E10700043 3500ppm 4000ppm 20ppm 1000ppm 94v-0 RoHS | |
M5L8085AP
Abstract: M50530-001FP M5L8085 m50530 M50530-XXXFP M50524FP interfacing of RAM and ROM with 8085 interfacing 8085 with lcd fcom 8d m50524
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M50530-XXXFP M50530-XXXFP M50521FP M50524FP. H-L4221-B Kt-8912 H-L4221-A M5L8085AP M50530-001FP M5L8085 m50530 M50524FP interfacing of RAM and ROM with 8085 interfacing 8085 with lcd fcom 8d m50524 | |
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Contextual Info: AMDÍ1 FINAL Am28F256A 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current |
OCR Scan |
Am28F256A 32-Pin | |
Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current |
OCR Scan |
Am28F512A 32-Pin AM28F512A | |
Contextual Info: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit |
OCR Scan |
KMM536100QA/AG/A1 20-pin 72-pin 361000A- M5361000A/A1: KMM5361000 111il 111111h | |
BT 151 PIN DIAGRAM
Abstract: MK31VT864A MK31VT864A-8YC
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MK31VT864A-8YC MK31VT864A-8YC_ MK31VT864A-8YC 64bit 168-pin 64-Bit Lj7EM240 00271D1 BT 151 PIN DIAGRAM MK31VT864A | |
Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e |
OCR Scan |
28F512 32-Pin Am28F512 | |
t428
Abstract: t437 fd-55gfr teac fd 235hf tag 8838 82C491 FD-235HF jumper T442 TAG t444 ATI T507
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-486SXWB 82C493/82C392/82C206) 82C493/82C392 82C206 80486/P23N t428 t437 fd-55gfr teac fd 235hf tag 8838 82C491 FD-235HF jumper T442 TAG t444 ATI T507 | |
Contextual Info: i» m c Semiconductor | Implementation of a High Rate Radio Receiver HSP43124, HSP43168, HSP43216, HSP50110, HSP5Q210 A p p l i c a t i o n No te J a n u a r y 1999 AN9658.1 Authors: John Henkelman and David Damerow Features • Modulation Formats: BPSK, QPSK, SQPSK, 8-PSK, FM, |
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HSP43124, HSP43168, HSP43216, HSP50110, HSP5Q210) AN9658 140MHz HSP50110 HSP50110/210 | |
FD-235HF jumper
Abstract: toshiba laptop battery pack pinout tag 8838 teac fd 235hf OPTi chipset 486 82C491 tvga teac fd-235hf fd-55gfr ATI T507
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-486SXWB 82C493/82C392/82C206) 82C493/82C392 82C206 80486/P23N FD-235HF jumper toshiba laptop battery pack pinout tag 8838 teac fd 235hf OPTi chipset 486 82C491 tvga teac fd-235hf fd-55gfr ATI T507 | |
2DM220P1001-1-H
Abstract: 2DM220P1002-1-H 2DM220P2001-1-H
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2D01/VD7 2DM220P1001-1-H 2DM220P1002-1-H 2DM220P2001-1-H | |
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. |
OCR Scan |
BUK102-50GS s/lis25 |