Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
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Original
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR041105
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PDF
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voltage drop circuit from 220V to 10V
Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This
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Original
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
A042005
voltage drop circuit from 220V to 10V
SOT89 FET marking
diode p3c
TP5322
TP5322K1
TP5322K1-G
TP5322N8
FAST DMOS FET Switches
MOS P-Channel SOT23
fet sot-89 marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
|
Original
|
TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR011905
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PDF
|
Untitled
Abstract: No abstract text available
Text: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs b v dss/ R d S ON b v dgs (max) 18V 2.5Q If Ordering Information Order Number /Package TO-243AA* Dice+ VgS (th)* (max) 250mA 1.0V TN2501N8 TN2501ND ^S creening to 0.8V available. *S am e as SO T-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.
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OCR Scan
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TN2501
O-243AA*
TN2501N8
TN2501ND
250mA
110pFm
TN2501
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PDF
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