110mJ
Abstract: IRFE024
Text: IRFE024 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 60V
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IRFE024
00A/ms
300ms,
110mJ
IRFE024
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7636 mosfet
Abstract: transistor mj 4035 BTS5235G GPS05094 PG-DSO-20-43 bts52
Text: T a r g et D a t a S h e et , V 1 . 2 , A u g 20 0 6 BTS 5235-2G Smart High-Side Power Switch PROFET Tw o C ha nn el s , 60 m Ω Automotive Power Smart High-Side Power Switch BTS 5235-2G Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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5235-2G
7636 mosfet
transistor mj 4035
BTS5235G
GPS05094
PG-DSO-20-43
bts52
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Untitled
Abstract: No abstract text available
Text: XX-XXXX, R e v O; 7/94 JVWÏXAJVX Low-Cost, 2-Channel, ± 14-Bit Serial ADCs The M A X 110/M A X 111 a n a lo g -to -d ig ita l converters ADCs use an on-chip auto-calibration technique to achieve 15-bit resolution plus overrange, with no exter nal com ponents. O p e ratin g su p p ly curre nt is only
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OCR Scan
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14-Bit
110/M
15-bit
MAX110
00CH070
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Untitled
Abstract: No abstract text available
Text: IRFE024 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 60V
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IRFE024
300ms,
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2SK2563
Abstract: F4F60VX2 600V,4A DIODE
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
2SK2563
F4F60VX2
600V,4A DIODE
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BTS5235-2G
Abstract: PG-DSO-20-43
Text: Data Sheet, Rev.1.0, June 2007 BTS5235-2G Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5235-2G
BTS5235-2G
PG-DSO-20-43
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5MIO
Abstract: 200mj AN4177 MC10XS3535 10XS3535 AECQ100 Monopulse 110mJ
Text: Freescale Semiconductor Application Note AN4177 Rev. 1.0, 7/2010 Repetitive Clamped Inductive Energy Capability for the MC10XS3535 By: Laurent Guillot 1 Introduction This document describes the functioning of the 10XS3535 smart power switch when switching inductive loads with no
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AN4177
MC10XS3535)
10XS3535
10XS3535
16-bit
5MIO
200mj
AN4177
MC10XS3535
AECQ100
Monopulse
110mJ
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PDF
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BTS5235-2G
Abstract: bts5235 transistor mj 4035 BTS5235L GPS05094 PG-DSO-20-43
Text: Data Sheet, Rev.1.1, Sep 2008 BTS5235-2G Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5235-2G
BTS5235-2G
bts5235
transistor mj 4035
BTS5235L
GPS05094
PG-DSO-20-43
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600V,4A DIODE
Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
600V,4A DIODE
2SK2563
600V4A
F4F60VX2
2a 400v mosfet
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513 scr
Abstract: No abstract text available
Text: Data Sheet, Rev.1.0, June 2007 BTS5235-2L Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2L Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5235-2L
513 scr
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Untitled
Abstract: No abstract text available
Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements
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NTE2984
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NTE2986
Abstract: No abstract text available
Text: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements
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NTE2986
NTE2986
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BTS 5235-2L
Abstract: 5235-2L BTS5235L load dump pulse
Text: T a r g et D a t a S h e et , V 1 . 2 , A u g 20 0 6 BTS 5235-2L Smart High-Side Power Switch PROFET Tw o C ha nn el s , 60 m Ω Automotive Power Smart High-Side Power Switch BTS 5235-2L Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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5235-2L
BTS 5235-2L
5235-2L
BTS5235L
load dump pulse
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NTE2984
Abstract: 110mJ
Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements
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NTE2984
NTE2984
110mJ
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PDF
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BTS5235-2L
Abstract: transistor mj 4035 BTS5235L PG-DSO-12-9 7415 ic pin details
Text: Data Sheet, Rev.1.1, Sep 2008 BTS5235-2L Smart High-Side Power Switch Automotive Power Smart High-Side Power Switch BTS5235-2L Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5235-2L
BTS5235-2L
transistor mj 4035
BTS5235L
PG-DSO-12-9
7415 ic pin details
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Untitled
Abstract: No abstract text available
Text: Target Data Sheet, V1.3, Nov 2006 BTS 5235-2G Smart High-Side Power Switch PROFET T w o C h a n n e l s , 6 0 mΩ Automotive Power Smart High-Side Power Switch BTS 5235-2G Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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5235-2G
5235-2L
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Untitled
Abstract: No abstract text available
Text: Target Data Sheet, V1.3, Nov 2006 BTS 5235-2L Smart High-Side Power Switch PROFET T w o C h a n n e l s , 6 0 mΩ Automotive Power Smart High-Side Power Switch BTS 5235-2L Table of Contents Page 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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5235-2L
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Untitled
Abstract: No abstract text available
Text: Series PSM10 PRECISION SCIENTIFIC POWER SUPPLY MODULES FEATURES 10W output power V & I control V & I monitor Output inhibit High stability Positive or negative polarity models Short circuit & lashover protected RoHS Compliant to EU Directive 2002/95/EC marked LVD
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PSM10
2002/95/EC
PSM10
D-63322
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