110 100A MOSFET Search Results

Contextual Info: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STE110NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH360N055T2 IXTT360N055T2 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

IXTH360N055T2

Abstract: IXTT360N055T2 S20NF
Contextual Info: Preliminary Technical Information IXTH360N055T2 IXTT360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

IXFH320N10T2

Abstract: IXFT320N10T2 320N10T
Contextual Info: Advance Technical Information IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Advance Technical Information IXTH360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR

100v, 100a mosfet

Abstract: siemens Low voltage AC Motor
Contextual Info: IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100

Contextual Info: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH320N10T2 IXFT320N10T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions D D (Tab) S Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXFN360N10T

Contextual Info: GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFN360N10T = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR

IXFN360N10T

Abstract: 360N10T F360 IXFN360N10 ixfn
Contextual Info: IXFN360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR

IXTN600N04T2

Contextual Info: Advance Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS

STE110NS20FD

Contextual Info: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

3110a

Abstract: STE110NS20FD
Contextual Info: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING

360N10T

Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Contextual Info: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

IXFH340N075T2

Abstract: IXFT340N075T2 2230PF
Contextual Info: Advance Technical Information IXFH340N075T2 IXFT340N075T2 TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

E80276

Abstract: FM200TU-3A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated

"MOSFET Module"

Abstract: E80276 FM200TU-07A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

Contextual Info: Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 IXFH340N075T2 IXFT340N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

DIODE T25

Abstract: "MOSFET Module" DIODE T25 4 E80276 FM200TU-3A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated

DIODE T25

Abstract: DIODE T25 4 E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

BV 030 7162

Abstract: APT30M30B2FLL APT30M30LFLL
Contextual Info: APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

"MOSFET Module"

Abstract: E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated