Untitled
Abstract: No abstract text available
Text: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STE110NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STE110NS20FD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH360N055T2 IXTT360N055T2 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTH360N055T2
IXTT360N055T2
O-247
360N055T2
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IXTH360N055T2
Abstract: IXTT360N055T2 S20NF
Text: Preliminary Technical Information IXTH360N055T2 IXTT360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTH360N055T2
IXTT360N055T2
O-247
O-268
360N055T2
IXTH360N055T2
IXTT360N055T2
S20NF
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IXFH320N10T2
Abstract: IXFT320N10T2 320N10T
Text: Advance Technical Information IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXFH320N10T2
IXFT320N10T2
O-247
320N10T2
IXFH320N10T2
IXFT320N10T2
320N10T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTH360N055T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR
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IXTH360N055T2
O-247
360N055T2
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100v, 100a mosfet
Abstract: siemens Low voltage AC Motor
Text: IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100
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IXFH320N10T2
IXFT320N10T2
O-247
062in.
O-247)
O-247
O-268
Characterist150
100v, 100a mosfet
siemens Low voltage AC Motor
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Untitled
Abstract: No abstract text available
Text: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH320N10T2 IXFT320N10T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions D D (Tab) S Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXFH320N10T2
IXFT320N10T2
O-247
320N10T2
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IXFN360N10T
Abstract: No abstract text available
Text: GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFN360N10T = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR
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IXFN360N10T
130ns
OT-227
E153432
360N10T
IXFN360N10T
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IXFN360N10T
Abstract: 360N10T F360 IXFN360N10 ixfn
Text: IXFN360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR
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IXFN360N10T
130ns
OT-227
E153432
360N10T
IXFN360N10T
F360
IXFN360N10
ixfn
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IXTN600N04T2
Abstract: No abstract text available
Text: Advance Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS
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IXTN600N04T2
OT-227
E153432
600N04T2
IXTN600N04T2
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STE110NS20FD
Abstract: No abstract text available
Text: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STE110NS20FD
STE110NS20FD
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3110a
Abstract: STE110NS20FD
Text: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STE110NS20FD
3110a
STE110NS20FD
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360N10T
Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions
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IXFK360N10T
IXFX360N10T
130ns
O-264
360N10T
PLUS-247
IXFK360N10T
IXFX360N10T
PLUS247
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions
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IXFK360N10T
IXFX360N10T
O-264
130ns
360N10T
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IXFH340N075T2
Abstract: IXFT340N075T2 2230PF
Text: Advance Technical Information IXFH340N075T2 IXFT340N075T2 TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXFH340N075T2
IXFT340N075T2
O-247
340N075T2
IXFH340N075T2
IXFT340N075T2
2230PF
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E80276
Abstract: FM200TU-3A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated
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FM200TU-3A
E80276
E80271
E80276
FM200TU-3A
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"MOSFET Module"
Abstract: E80276 FM200TU-07A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated
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FM200TU-07A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-07A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 IXFH340N075T2 IXFT340N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXFH340N075T2
IXFT340N075T2
O-247
340N075T2
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DIODE T25
Abstract: "MOSFET Module" DIODE T25 4 E80276 FM200TU-3A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated
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FM200TU-3A
E80276
E80271
30K/W
DIODE T25
"MOSFET Module"
DIODE T25 4
E80276
FM200TU-3A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-07A ● ID rms . 100A ● VDSS . 75V ● Insulated
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FM200TU-07A
E80276
E80271
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DIODE T25
Abstract: DIODE T25 4 E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
DIODE T25
DIODE T25 4
E80276
FM200TU-2A
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BV 030 7162
Abstract: APT30M30B2FLL APT30M30LFLL
Text: APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M30B2FLL
APT30M30LFLL
O-264
O-264
O-247
BV 030 7162
APT30M30B2FLL
APT30M30LFLL
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"MOSFET Module"
Abstract: E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-2A
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