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    10V 50MA ZERO VOLTAGE SWITCH Search Results

    10V 50MA ZERO VOLTAGE SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    10V 50MA ZERO VOLTAGE SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 5HN01M N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 5HN01M 100mA 100mA 981111TM2fXHD

    Untitled

    Abstract: No abstract text available
    Text: 5HN01SS N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 5HN01SS 100mA 100mA 981111TM2fXHD

    5HN01C

    Abstract: No abstract text available
    Text: 5HN01C N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 5HN01C 100mA 100mA 981116TM2fXHD 5HN01C

    Untitled

    Abstract: No abstract text available
    Text: 5HN01N N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 5HN01N 100mA 100mA 981111TM2fXHD

    Untitled

    Abstract: No abstract text available
    Text: 3LP01C P- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 3LP01C -50mA -30mA -100mA 981111TM2fXHD

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X SOT-89-3L MOSFET N-Channel 11 2 2 3 3 FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-89-3L 2N7002X OT-89-3L 500mA 200mA 115mA 500mA, 500mA

    2N2907AUB

    Abstract: No abstract text available
    Text: FT2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier


    Original     		PDF FT2N2907AUB MIL-PRF-19500 FT2N2907AUB 150mA 500mA 150mA, 500mA, 2N2907AUB

    FT2N

    Abstract: No abstract text available
    Text: FT2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR Features: Applications: • • • • • • • • Hermetically sealed High Reliability Miniature, ceramic surface mount package MIL-PRF-19500 screening available Analog Switch Small Signal Amplifier


    Original     		PDF FT2N2907AUA MIL-PRF-19500 FT2N2907AUA 150mA 500mA 150mA, 500mA, FT2N

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002T FEATURES z Low on-resistance. z Low gate threshold voltge. z Low input capacitance. z Fast switching speed. z Low input/output leakage. Pb Lead-free APPLICATIONS z N-channel enhancement mode effect transistor.


    Original     		PDF 2N7002T OT-523 BL/SSMTH016

    Untitled

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage


    Original     		PDF TC1550 TC1550 DSFP-TC1550 A091608

    LX5 transistor

    Abstract: No abstract text available
    Text: Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V BD8355MWV No.11036EAT20 ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and


    Original     		PDF BD8355MWV 11036EAT20 BD8355MWV R1120A LX5 transistor

    LX5 transistor

    Abstract: NR3015T330M LX7 transistor DEM4518 DEM3518C
    Text: BD8355MWV Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V BD8355MWV No.11036EAT20 ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and


    Original     		PDF BD8355MWV 11036EAT20 BD8355MWV R1120A LX5 transistor NR3015T330M LX7 transistor DEM4518 DEM3518C

    LX5 transistor

    Abstract: No abstract text available
    Text: Regulators ICs for Digital Cameras and Camcorders System Switching Regulator IC with Built-in FET 10V No.11036EAT20 BD8355MWV ●Description BD8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and


    Original     		PDF BD8355MWV 11036EAT20 BD8355MWV R1120A LX5 transistor

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 FEATURES z High Density Cell Design For Low RDS ON 。 Pb z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability. Lead-free APPLICATIONS


    Original     		PDF 2N7002 OT-23 BL/SSMTC008

    2N7002 60V SOT-23

    Abstract: 2n7002 bl galaxy 2N7002 SOT-23 2N7002 mosfet 2n7002 sot-23 MARKING CODE 21 2N7002 MARKING Small Signal MOSFET 2N7002- SOT23 MOSFET TRANSISTOR K 135 mosfet
    Text: BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 FEATURES z High Density Cell Design For Low RDS ON 。 Pb z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability. Lead-free APPLICATIONS


    Original     		PDF 2N7002 OT-23 BL/SSMTC008 2N7002 60V SOT-23 2n7002 bl galaxy 2N7002 SOT-23 2N7002 mosfet 2n7002 sot-23 MARKING CODE 21 2N7002 MARKING Small Signal MOSFET 2N7002- SOT23 MOSFET TRANSISTOR K 135 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		PDF VN0550 DSFP-VN0550 C081913

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET N-Channel D WBFBP-03B (1.2x1.2×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching


    Original     		PDF WBFBP-03B 2N7002M WBFBP-03B 400mA 200mA 115mA, 500mA 250mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: 3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION Ø 3VD045060JL is a N-Channel enhancement mode 2 MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø High density cell design for low RDS ON Ø Rugged and reliable. Ø Fast switching performance.


    Original     		PDF 3VD045060JL 3VD045060JL OT-23 2N7002. 500mA 200mA 115mA,

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・ESD Protected 2000V. A ・High density cell design for low RDS ON . ・Voltage controlled small signal switch. ・Rugged and reliable.


    Original     		PDF 2N7000K 100ms

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms

    2N7000

    Abstract: 2n7000k
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms 2N7000 2n7000k

    10V 50mA zero voltage switch

    Abstract: M7002TTD03
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFET M7002TTD03 MOSFET N-Channel D WBFBP-03A (1.6x1.6×0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching


    Original     		PDF WBFBP-03A M7002TTD03 WBFBP-03A 400mA 200mA 115mA, 500mA 250mA width300s, 10V 50mA zero voltage switch M7002TTD03

    2N7002 MARKING

    Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252
    Text: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and


    OCR Scan     		PDF /170S 2N7002 N7002 OT-23 2N7002 X2N7002 443S2 000GT12 2N7002 MARKING N-700-2 2N7002 v02 RG252