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Infineon Technologies AG IKD10N60RC2ATMA1 IGBT TRENCH FS 600V 18.8A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKD10N60RC2ATMA1	Digi-Reel	5,824		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53442 10000 $0.53442	Buy Now
	IKD10N60RC2ATMA1	Cut Tape	5,824		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53442 10000 $0.53442	Buy Now
	IKD10N60RC2ATMA1	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.48006	Buy Now
Avnet Americas	IKD10N60RC2ATMA1	Reel		19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.48177	Buy Now
Mouser Electronics	IKD10N60RC2ATMA1		2,028			1 $0.67 10 $0.664 100 $0.577 1000 $0.48 10000 $0.433	Buy Now
Newark	IKD10N60RC2ATMA1	Cut Tape	2,226		1	1 $0.707 10 $0.699 100 $0.6 1000 $0.499 10000 $0.499	Buy Now
Rochester Electronics	IKD10N60RC2ATMA1		1,243		1	1 $0.4814 10 $0.4814 100 $0.4525 1000 $0.4092 10000 $0.4092	Buy Now

Chip One Stop	IKD10N60RC2ATMA1	Cut Tape	2,440	0 Weeks, 1 Days	5	1 - 10 $0.493 100 $0.491 1000 $0.482 10000 $0.481	Buy Now
EBV Elektronik	IKD10N60RC2ATMA1			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STD10N60M2 MOSFET N-CH 600V 7.5A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD10N60M2	Digi-Reel	4,849		1	1 $2.1 10 $1.344 100 $2.1 1000 $0.66486 10000 $0.66486	Buy Now
	STD10N60M2	Cut Tape	4,849		1	1 $1.73 10 $1.173 100 $1.73 1000 $0.64434 10000 $0.64434	Buy Now
Mouser Electronics	STD10N60M2		16,712			1 $1.7 10 $1.15 100 $0.812 1000 $0.612 10000 $0.551	Buy Now
Newark	STD10N60M2	Bulk	10,999		1	1 $1.7 10 $1.15 100 $0.812 1000 $0.612 10000 $0.551	Buy Now
STMicroelectronics	STD10N60M2		16,712		1	1 $1.67 10 $1.13 100 $0.8 1000 $0.65 10000 $0.65	Buy Now
TME	STD10N60M2		2,350		1	1 $1.23 10 $1.11 100 $0.88 1000 $0.82 10000 $0.82	Buy Now

ComSIT USA	STD10N60M2		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STD10N60M2		97,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STD10N60M2	Cut Tape	2,500	0 Weeks, 1 Days	5	1 - 10 $1.05 100 $0.747 1000 $0.608 10000 $0.608	Buy Now
Win Source Electronics	STD10N60M2		30,000			1 - 10 - 100 - 1000 $0.3063 10000 $0.2746	Buy Now
Infineon Technologies AG IGB10N60TATMA1 IGBT NPT FS 600V 20A TO263-3-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGB10N60TATMA1	Digi-Reel	3,783		1	1 $1.91 10 $1.216 100 $1.91 1000 $0.64944 10000 $0.64944	Buy Now
	IGB10N60TATMA1	Cut Tape	3,783		1	1 $1.91 10 $1.216 100 $1.91 1000 $0.64944 10000 $0.64944	Buy Now
	IGB10N60TATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.59476 10000 $0.4925	Buy Now
Mouser Electronics	IGB10N60TATMA1		3,072			1 $1.74 10 $1.1 100 $0.78 1000 $0.584 10000 $0.492	Buy Now
Rochester Electronics	IGB10N60TATMA1		1,062		1	1 $0.5472 10 $0.5472 100 $0.5144 1000 $0.4651 10000 $0.4651	Buy Now
TME	IGB10N60TATMA1		497		1	1 $1.36 10 $1.1 100 $0.83 1000 $0.74 10000 $0.74	Buy Now
Chip One Stop	IGB10N60TATMA1	Cut Tape	935	0 Weeks, 1 Days	1	1 $0.58 10 $0.579 100 $0.577 1000 $0.568 10000 $0.568	Buy Now

EBV Elektronik	IGB10N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nisshinbo Micro Devices R1210N602D-TR-FE IC REG BOOST 5MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1210N602D-TR-FE	Digi-Reel	2,995		1	1 $1.22 10 $0.883 100 $0.7064 1000 $0.61398 10000 $0.61398	Buy Now
	R1210N602D-TR-FE	Cut Tape	2,995		1	1 $1.22 10 $0.883 100 $0.7064 1000 $0.61398 10000 $0.61398	Buy Now
Infineon Technologies AG IKP10N60TXKSA1 IGBT NPT FS 600V 20A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKP10N60TXKSA1	Tube	2,265		1	1 $2.39 10 $2.39 100 $2.39 1000 $0.7702 10000 $0.66975	Buy Now
Avnet Americas	IKP10N60TXKSA1	Bulk			1	1 $1.36 10 $0.849 100 $0.766 1000 $0.599 10000 $0.599	Buy Now
Mouser Electronics	IKP10N60TXKSA1		1,266			1 $2.33 10 $1.12 100 $0.997 1000 $0.7 10000 $0.669	Buy Now
Newark	IKP10N60TXKSA1	Bulk	2,378		1	1 $1.36 10 $0.849 100 $0.766 1000 $0.595 10000 $0.595	Buy Now
TME	IKP10N60TXKSA1				1	1 $1.13 10 $0.94 100 $0.88 1000 $0.88 10000 $0.88	Get Quote

Chip One Stop	IKP10N60TXKSA1	Tube	499	0 Weeks, 1 Days	1	1 $0.773 10 $0.77 100 $0.765 1000 $0.749 10000 $0.749	Buy Now
EBV Elektronik	IKP10N60TXKSA1			20 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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10N60 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
10N60	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60-B-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60C5M	IXYS	CoolMOS Power MOSFET	Original	PDF
10N60L-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF

10N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743	PDF
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l	PDF
Untitled Abstract: No abstract text available Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220	PDF
10n60b Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
10n60p Abstract: d 1065 Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V	Original	10N60P O-220 O-263 O-263) O-263 10n60p d 1065	PDF
10N60C Abstract: IXKP10N60C5 Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N60K-MT 10N60K-MT QW-R205-022	PDF
Untitled Abstract: No abstract text available Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K O-220F O-220F1 QW-R502-743	PDF
MOSFET IXYS TO-263 Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263	PDF
10N60C Abstract: GS54 Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	10N60C5M O-220 20070704a9 10N60C GS54	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 O-220 O-220F O-220at QW-R502-119	PDF

Untitled Abstract: No abstract text available Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080310a	PDF
10n60b Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2 10n60b	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N60Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator	Original	10N60Y0 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
10N60C Abstract: c16tj 10N60C5M Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M	PDF
"7 Segment Display" Abstract: light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0 Text: Plastic fiber optic sensors Series 10 Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm Standard PNP light/dark operate FVDK 10P60Y0 Remote Teach-in FVDK 10P65Y0 4102010 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm	Original	10P60Y0 10P65Y0 10N60Y0 10N65Y0 "7 Segment Display" light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0	PDF
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A	PDF
10N60A Abstract: IGBT 10N60 10N6Q Text: nixYS ^ 10N60 IXGA/IXGH 10N60A \|g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s	OCR Scan	IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
Untitled Abstract: No abstract text available Text: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s	OCR Scan	10N60AU1 O-247AD	PDF

10N60 Search Results

10N60 Price and Stock

Infineon Technologies AG IKD10N60RC2ATMA1

STMicroelectronics STD10N60M2

Infineon Technologies AG IGB10N60TATMA1

Nisshinbo Micro Devices R1210N602D-TR-FE

Infineon Technologies AG IKP10N60TXKSA1

10N60 Datasheets (5)

10N60 Datasheets Context Search

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10N60G

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10n60b

10n60p

10N60C

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MOSFET IXYS TO-263

10N60C

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10n60b

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10N60C

"7 Segment Display"

diode DSDI 9

10N60A

ixgh 1500

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