SG-10LS
Abstract: SG-10LLXR SG-10LXR SG-10LXS SG-10LZ23R SG-10LZ23S SG-10LLR SG-10LLS SG-10LLXS SG-10LLZ23S
Text: Rectifier Diodes for Alternators Electrical Characteristics Absolute maximum ratings Type No. SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR SG-10LS SG-10LR SG-10LXS SG-10LXR SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR SG-10LZ23S SG-10LZ23R SG-10LLZ23S SG-10LLZ23R VRM V IF (AV)
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SG-10LS
SG-10LS
SG-10LLXR
SG-10LXR
SG-10LXS
SG-10LZ23R
SG-10LZ23S
SG-10LLR
SG-10LLS
SG-10LLXS
SG-10LLZ23S
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GDH04S
Abstract: P048F048T12AL-CB capacitor 2,2 nF thru hole QPI-10LZ CY10 QPI-7
Text: QPI-10-CB1 QUIETPOWER QPI-10LZ Filter Carrier Board for 48 V V•I Chip EMI Evaluation Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . Page 1 Board overview . . . . . . . . . . . . . . . . . . . . . . . . Page 2 Bill of materials . . . . . . . . . . . . . . . . . . . . . . . . Page 2
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QPI-10-CB1
QPI-10LZ
P048F048T12AL-CB,
P048F048T24AL-CB,
P048F048T17AL-CB,
P048F048T32AL-CB,
QPI-10-CB1
GDH04S
P048F048T12AL-CB
capacitor 2,2 nF thru hole
CY10
QPI-7
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QPI-10LZ
Abstract: "Power over Ethernet"
Text: Power Over Ethernet POE Systems • • • • • Wide range input EMI Filter (QPI-10LZ) Paralleled PRMs with ORing Redundant/backup PRM Trimmed PRM voltage (54 V) into POE Hub
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QPI-10LZ)
QPI-10LZ
"Power over Ethernet"
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Scans-0017254
Abstract: general electric
Text: ELKCTROXn • » PRODUCT INFORMATION Page 1 10LZ8 IN ACTION Triode-Pentode TUBES The 10LZ8 is a miniature triode-pentode containing a high-mu triode and a sharpcutoff pentode. The pentode is intended for use as a video amplifier and the triode for general-purpose use.
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10LZ8
R-5561I-T0304-4
10LZ8
K-5561
1-TD304-7
00tl0
R-55611-T0304-8
Scans-0017254
general electric
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10LZ
Abstract: IR 732 H
Text: TLP731,732 GaAs IRED S PHOTO-TRANSISTOR OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor o ptically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP731
TLP732
E67349
EN60950)
BS7002
TLP732
10LZ
IR 732 H
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Untitled
Abstract: No abstract text available
Text: 256KB/1MB/4MB IDT79R4000 SECONDARY CACHE MODULE BLOCK FAMILY PRELIMINARY IDT7MP6074 IDT7MP6084 IDT7MP6094 FEATURES: DESCRIPTION: • High-speed B iC E M O S /C E M O S ™ secondary cache module block constructed to support the IDT79R4000 CPU • Available as a pin compatible family to build 256 kilobyte
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256KB/1MB/4MB
IDT79R4000
IDT7MP6074
IDT7MP6084
IDT7MP6094
50MHz
75MHz
IDT79R4000
IDT7MP6074/84/94
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 d a ta s h e e t SDC16UL7284- 67/84/100/125 T-S 128MByte (16M x 72) CMOS Synchronous DRAM Module General Description The SDC16UL7284-(67/84/100/125)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized
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SDC16UL7284-
128MByte
128-megabyte
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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SDC8UV7284-
64MByte
64-megabtye
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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SDC8UV6484-
64MByte
64-megabtye
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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PDF
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UL7284-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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SDC8UL7284-
64MByte
64-megabyte
168-pin,
MB81164842A-
64MByte
67Mhz
84Mhz
100Mhz
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Q8-DQ15
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC16UV6484- 67/84/100/125 T-S 128MByte (16M x 64) CMOS Synchronous DRAM Module General Description The SDC16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynamic RAM module organized
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SDC16UV6484-
128MByte
128-megabtye
168-pin,
B81164842A-
67Mhz
84Mhz
100Mhz
125Mhz
Q8-DQ15
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C5857
Abstract: C5352 L7970
Text: INTEGRATE» DEVICE bflE j m 4fl2S771 Q Q x 4g23 ^ Tb mil>T HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM IDT7099S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output tim es — Military: 20/25/30ns (max.) — C om m ercial: 15/20/25ns (max.)
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4fl2S771
IDT7099S
20/25/30ns
15/20/25ns
T7099S
D1423D
IDT7099S
MIL-STD-883,
68-pin
C5857
C5352
L7970
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC16UL6484- 67/84/100/125 T-S 128MByte (16M x 64) CMOS Synchronous DRAM Module General Description The SDC16UL6484-(67/84/100/125)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized
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SDC16UL6484-
128MByte
128-megabyte
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
125Mhz
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UPD42S17805LG5-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿J P D 4 2 S 1 7 8 0 5 L , 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The /xPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17805L
uPD4217805L
/xPD42S17805L
/xPD42S17805L,
4217805L
28-pin
UPD42S17805LG5-A60-7JD
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Untitled
Abstract: No abstract text available
Text: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 m eg ab it C M O S static R A M m odule T h e ID T 7 M 4 0 4 8 is a 4 m eg ab it 5 1 2 K x 8 C M O S static • Equivalent to the J E D E C stan dard for future monolithic
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IDT7M4048
IDT7M4048
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Untitled
Abstract: No abstract text available
Text: IDT7MP4045 IDT7MP4145 2 5 6 K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 The IDT7MP4045/4145 is a 256K x 32 static RAM module
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045/4145
IDT7MP4045/7MP4145
7MP4045
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7M1002 16 Kx 32 CMOS DUAL-PORT STATIC RAM MODULE Integrated Device Technology, Inc. DESCRIPTION FEATURES • High density 512K CMOS dual-port RAM modules • Fast access times The IDT7M1002 is a 16K x 32 high speed CMOS Dual-Port static RAM Module constructed on a co-fired ceramic sub
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IDT7M1002
100ns
IDT7M1002
IDT7006)
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • Equal access and cycle times — Military: 20/25ns — Commercial: 15/17ns • One Chip Select plus one Output Enable pin
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IDT71028
20/25ns
15/17ns
28-pin
MIL-STD-883,
IDT71028
576-bit
200mV
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE _ bflE D • 4055771 0013031 flbl ■ IDT . fflffljp X fR'i CMOS SyncBiFlFO IDT72605 256 x 18 x 2 and 512 x 18 x 2 IDT72615 I dt Integrated D evice Technology, In c p o w e r bidirectional First-In , F irs t-O u t F IF O ) m em o rie s , with
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IDT72605
IDT72615
IDT72605/IDT72615
68-pm
68-pin
64-pin
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TLC3702
Abstract: TLC3704
Text: - 146 — TLC3702, TLC3704 *E¿fct08 fi*, h' L i n C M O S * ¡ O Í S * H £ ^ « « ! » j f F , ffifiWHJtKOÌftffl=i V A U — ? X , \ÜtS ¡ i -/-y - > a y ; H Í ¿ 4 i T Í J n ± 2 0 m A « t S S f i t i n t l ' ä . TLC3702 l i f i 7 ) K TLC3704 l± ? 7 -y h ' - a y ^ l / - i i t * 5 .
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TLC3702,
TLC3704
TLC3702
TLC3704
TLC3702)
TLC3704)
10lzQtyp
23//V/
10kHz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL6414- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UL6414-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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SDC8UL6414-
64MByte
64-megabyte
168-pin,
B811641642A-
4Mx16
64MByte
67Mhz
84Mhz
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 1 28K 8K x 16 BIT PRELIMINARY SEQUENTIAL-ACCESS mJ708S ? RANDOM-ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. • FEATURES: • 8K x 16 Sequential-Access Random-Access Memory (SARAM™) - Sequential Access from one port and standard Random
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mJ708S
MIL-STD-883,
84-pln
G84-3)
80-pin
PN80-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet SDC2UL7284- 671841100 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UL7284-(67/84/100)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M
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SDC2UL7284-
16MByte
16-megabyte
168-pin,
B81116822C-
67Mhz
84Mhz
100Mhz
125Mhz
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PDF
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Untitled
Abstract: No abstract text available
Text: BPX 48 BPX 48F SIEMENS DAYLIGHT FILTER Silicon Differential Photodiode Dimensions in inches mm .159(4.05) I .147 (3.75) I H 0e to 5° Cathode uauiuub / ?4 _ noR Lead spacing n 6 2) ~ T .096 (2.45) idre" DESCRIPTION The differential photodiode BPX 48 is designed for special industrial electronic
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18-pln
fl535t
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