Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4502
5SYA1115-03
CH-5600
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COSMIC
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 920 IFRMS = 1440 IFSM = 25 VF0 = 1.6 rF = 1.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115- 01 July 98 Features • Patented free-floating silicon technology
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10H4502
CH-5600
COSMIC
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PDF
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A125
Abstract: B125 C125 D125 10H4503
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
A125
B125
C125
D125
10H4503
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PDF
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A140
Abstract: B140 C140 VF140 VF25
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ Ω V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 Nov. 03 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating
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10H4520
5SYA1170-00
CH-5600
A140
B140
C140
VF140
VF25
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PDF
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A140
Abstract: B140 C140 VF140 VF25 5SDF kn 18
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating
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10H4520
5SYA1170-00
CH-5600
A140
B140
C140
VF140
VF25
5SDF
kn 18
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PDF
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snubber IGCT
Abstract: No abstract text available
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 950 1500 24 1.94 0.86 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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10H4502
CH-5600
snubber IGCT
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Jan. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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Original
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10H4503
5SYA1163-00
CH-5600
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PDF
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snubber IGCT
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology
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10H4502
CH-5600
snubber IGCT
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PDF
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5.5 kw abb
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 810 24x103 2.42 1.1 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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Original
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10H4502
5SYA1115-03
CH-5600
5.5 kw abb
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PDF
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10H45
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1170 20 1.75 0.75 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4503 PRELIMINARY Doc. No. 5SYA1163-00 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-00
CH-5600
10H45
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10H4503
Abstract: abb b25
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Nov. 04 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
10H4503
abb b25
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum
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SS10PH45
AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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TO220FPAB
Abstract: diode V101 power supply lcd monitor tb3t V101
Text: 10H45C 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. High junction temperature capability Good trade off between leakage current and forward voltage drop
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GMR10H45C
220FPAB
220AB
10H45C
10max)
GMR10H45C
O220AB
O220FPAB
TO220FPAB
diode V101
power supply lcd monitor
tb3t
V101
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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PDF
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IGCT thyristor ABB
Abstract: high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 March 05 • High snubberless turn-off rating • Optimized for medium frequency (<1kHz) and
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26L4510
5SYA1230-02
CH-5600
IGCT thyristor ABB
high power igct abb
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PDF
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IGCT thyristor ABB
Abstract: high power igct abb agilent 5SZK 9107 Specification
Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 06 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and
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26L4510
5SYA1230-02
CH-5600
IGCT thyristor ABB
high power igct abb
agilent
5SZK 9107 Specification
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PDF
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Untitled
Abstract: No abstract text available
Text: 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. ̈ High junction temperature capability ̈ Good trade off between leakage current and forward voltage drop ̈ Low leakage current
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220FPAB
220AB
10max)
GMR10H45C
O220AB
O220FPAB
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PDF
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Untitled
Abstract: No abstract text available
Text: 10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency
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MBRS10H45CTC
MBRS10H200CTC
2011/65/EU
2002/96/EC
J-STD-020,
O-263AB
mbrs10hctc
Jul-12
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PDF
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S16070
Abstract: No abstract text available
Text: MITSUBISHI ICs TV { M51307BSP i NTSC SYSTEM SINGLE-CHIP COLOR TV SIGNAL PROCESSOR DESCRIPTION The M51307BSP is a semiconductor integrated circuit with signal processing functions for video IF, sound IF, video, color, deflection signals and a single chip capable of
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M51307BSP
M51307BSP
S16070
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PDF
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5SDF28L4520
Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing Cosmic radiation withstand rating Optimized low on-state
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28L4520
5SYA1185-01
CH-5600
5SDF28L4520
8106AS
28L4520
VF125
tfr 586
ABB rcl
5SDF 28L4520
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PDF
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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SS10PH45
Abstract: No abstract text available
Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum
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SS10PH45
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
SS10PH45
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PDF
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SS10PH45
Abstract: No abstract text available
Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C
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Original
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SS10PH45
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
SS10PH45
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PDF
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IGCT 7000
Abstract: No abstract text available
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5500 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-04 May 08 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity
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55L4500
5SYA1243-04
CH-5600
IGCT 7000
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PDF
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