10DEC09 Search Results

cfw 32

Contextual Info: D E S C R IP T IO N RE V APPROVED BY/DATE o E C O -09-026495 RECOMMENDED PANEL CUTOUT AEG 10DEC09 A1 NOT TO SCALE NOTES, (A3 FOR PANEL TH'K. OF .037 -,079 CSJ FOR PANEL TH'K. OF .003 - .126 C O FOR SNAP-IN APPLICATION. THE SIDES OF THE CUTOUT MUST HAVE A

AEG CF 250

Contextual Info: APPROVED BY DESCRIPTION DATE REV 5 AEG ECO-09-026495 4 10DEC09 SAFETY ORGANIZATIONCS : THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED OR APPROVED BY THE LISTED AGENCY. THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS

Contextual Info: i A P P R O V E D BY D E S C R IP T IO N DATE REV 3 AEG ECO-09-026495 4 10DEC09 SAFETY ORGAN1ZATI ON S : THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED OR APPROVED BY THE LISTED AGENCY. THEREFORE , ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS

aeg td

Contextual Info: SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIONS THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED DR APPROVED BY THE LISTED AGENCY, THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION DF THE FOLLOWING AGENCY STANDARDS HAVE BEEN MET: STORAGE TEMPERATURE: -4CTC TD +85°C

Vishay nobel

Contextual Info: Model CLC Vishay Nobel Low Profile Shear Force Load Cell FEATURES • Capacity 25, 50t, 100t and 200t • Other capacities on request • Very low profile • High long-term stability and repeatability • Operating temperature range -40 to +80°C +125°C with

Contextual Info: MIB Vishay Electro-Films Thin Film Microwave Resistor FEATURES MICROWAVE RESISTORS Product may not be to scale • Wire bondable • Small single chip size: 0.010" x 0.020" • Microwave resistance range: 20 Ω to 100 Ω • Overall resistance range: 20 Ω to 2 kΩ

ECO-09-026495

Contextual Info: 8 Standardausführung: standard versions: V42254-A5235-C* V42254-A5231-C* Maße mi t O b e r t e i l im v o r g e r a s t e t e n Zustand dimensions with snap-on cover pre latch ed Maße mi t O b e r t e i l im v e r p r e ß t e n Z u s t a n d und m o n t i e r t e n

R20TU0018ED0100

Abstract: uPD70F3522 uPD70F3522-26 uPD70F35 V850E2 DX4 renesas v850e2 hardware manual Dx4 renesas EEDT-OP-0044-4 renesas v850e2 user manual renesas v850e2
Contextual Info: Customer Notification QB-70F3534-PD In-Circuit-Emulator Operating Precautions Target Device µPD70F3522-26, 35-37, V850E2/DX4 www.renesas.com Document No. R20TU0018ED0100 Date Published: August 2010 Notice 1. All information included in this document is current as of the date this document is issued. Such

Contextual Info: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC

303144U

Abstract: 303145 CSM2512 CSM3637 EEE-INST-002 0R004 303144 MIL-PRF-49465
Contextual Info: 303144, 303145 Vishay Foil Resistors Models # 303144 and 303145 - Fixed Resistors CSM2512 and CSM3637 with Screen/Test Flow in Compliance with EEE-INST-002 Tables 2A and 3A, Film/Foil, Level 1 MIL-PRF-55342 and MIL-PRF-49465 FEATURES 303144 and 303145 are low value current sense resistors,

lU137

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S 00 AD RESERVED. LTR 8 I . 60 DESCRIPTION E I 4 . 95 i DATE DWN APVD E C O - 06 - 7 8 7 I 28SEP2006

Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT December 2009 - Rev 10-Dec-09 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

smd diode GW

Contextual Info: VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBPW104S • Package form: GW, RGW • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity

XP1080-QU-0NP0

Contextual Info: 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm P1080-QU December 2009 - Rev 10-Dec-09 Features Linear Power Amplifier On-Chip Power Detector Output Power Adjust 25.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point +38.0 dBm OIP3 General Description Absolute Maximum Ratings1,2

v4148

Abstract: 2SD1410 MIL-C-27500 shielded wire V414 1N4148 1N4148-TAP 1N4148-TR 1N914 DO35
Contextual Info: 1N4148 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon epitaxial planar diodes • Electrically equivalent diodes: 1N4148 - 1N914 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC BY - 1969343-1,-2,-3,-4,-5,-6 REVISIONS DIST - ALL RIGHTS RESERVED. - P LTR DESCRIPTION B C E WIRE COLOR SEE TABLE DATE DWN APVD PER ECR-11-017710 28MAR2012 PB PB ECR-13-004256

796502-1

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - R EVIS IO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N C2 D RECEPTACLE MATL: THERMOPLASTIC