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    107NC Price and Stock

    Glenair Inc 800-011-07NC6-7SN

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    Mouser Electronics 800-011-07NC6-7SN
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    • 10 $288.66
    • 100 $221.07
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    Newark 800-011-07NC6-7SN Bulk 35 1
    • 1 $478.53
    • 10 $263
    • 100 $153.96
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    ROHM Semiconductor SCT3040KLGC11

    SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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    TTI SCT3040KLGC11 Tube 450 30
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    IXYS Corporation IXFH74N20P

    MOSFETs 74 Amps 200V 0.034 Rds
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    TTI IXFH74N20P Tube 300 30
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    • 100 $4.66
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    IXYS Corporation IXFH60N65X2

    MOSFETs MOSFET 650V/60A Ultra Junction X2
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    TTI IXFH60N65X2 Tube 300 30
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    ROHM Semiconductor SCT3040KRC14

    SiC MOSFETs TO247 1.2KV 55A N-CH SIC
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    TTI SCT3040KRC14 Tube 240 240
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    107NC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDB9406

    Abstract: FDB9406/MAX6958AAPE-datasheet
    Text: FDB9406_F085 N-Channel Power Trench MOSFET December 2012 FDB9406_F085 N-Channel Power Trench® MOSFET 40V, 110A, 1.8mΩ D D Features „ Typ rDS on = 1.31mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant


    Original     		FDB9406 107nC O-263AB FDB9406/MAX6958AAPE-datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 mΩ D D Features „ Typ RDS on = 1.31mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263 FDB SERIES Applications


    Original     		FDB9406 107nC O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 2.2 mΩ D Features „ Typ RDS on = 1.73mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 TO-262AB FDI SERIES Applications


    Original     		FDI9406 107nC O-262AB PDF

    FDI9406

    Abstract: No abstract text available
    Text: FDI9406_F085 N-Channel Power Trench MOSFET December 2012 FDI9406_F085 N-Channel Power Trench® MOSFET 40V, 110A, 2.2mΩ D Features „ Typ rDS on = 1.73mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant


    Original     		FDI9406 107nC O-262AB PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF