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    107 TRANSISTOR Search Results

    107 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    107 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIP105

    Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
    Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.


    Original     		TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A PDF

    RG-107 diode

    Abstract: marking BS Q67000-S078
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		Q67000-S078 E6288 RG-107 diode marking BS Q67000-S078 PDF

    Q67000-S078

    Abstract: BS 107
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		Q67000-S078 E6288 Q67000-S078 BS 107 PDF

    22 J1J

    Abstract: No abstract text available
    Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    Original     		SSW-107 SSW-107 500MHz 22 J1J PDF

    design of 4-20mA transmitter for bridge type transducer using op-amp

    Abstract: "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op
    Text: APPLICATION NOTE AN-107 Linear Optocouplers AN-107 Introduction This application note describes isolation amplifier design principles for the LOC Series linear optocoupler devices. It describes the circuit operation in photoconductive and photovoltaic modes and provides some


    Original     		AN-107 AN-107-R2 design of 4-20mA transmitter for bridge type transducer using op-amp "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4v, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 PDF

    TIP105

    Abstract: TIP106 TIP107
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original     		TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 PDF

    2n2222 -331 transistors

    Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
    Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111


    OCR Scan     		BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C 2n2222 -331 transistors 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132 PDF

    A1E transistor

    Abstract: No abstract text available
    Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107


    OCR Scan     		Q67000-S078 E6288 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A1E transistor PDF

    BS107

    Abstract: No abstract text available
    Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107


    OCR Scan     		Q67000-S078 E6288 BS107 PDF

    MARKING BS

    Abstract: BS107
    Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V 3 VPT05 158 Pin 1 Pin 2 S Type b BS 107 Vds 200 V Type BS 107 BS 107 Ordering Code Q67000-S060 Q67000-S078 0.13 A Pin 3 D G ^DS(on) Package


    OCR Scan     		VPT05 Q67000-S060 Q67000-S078 E6288 MARKING BS BS107 PDF

    equivalent schematic of LM107

    Abstract: LM307N A 107 transistor LM101 LM101A LM107 LM107F LM107H LM107J-14 LM307
    Text: DOTÜ^IOIL LM 107, LM 307 O perational A m plifiers FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA maximum over temperature (107) Offset current 20 nA maxim um over temperature (107) Guaranteed drift characteristics


    OCR Scan     		LM107, LM307 LM101. LM101A 150CC. equivalent schematic of LM107 LM307N A 107 transistor LM101 LM107 LM107F LM107H LM107J-14 PDF

    equivalent schematic of LM107

    Abstract: LM307N LM307J LM307N equivalent lm 307 operational amplifier LM101 LM101A LM107 LM107F LM107H
    Text: LM107, LM307 Operational Amplifiers DWÜ^DL FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA m axim um over tem perature (107) Offset current 20 nA m axim um over tem perature (107) Guaranteed drift characteristics


    OCR Scan     		LM107, LM307 LM101, LM101A equivalent schematic of LM107 LM307N LM307J LM307N equivalent lm 307 operational amplifier LM101 LM107 LM107F LM107H PDF

    Untitled

    Abstract: No abstract text available
    Text: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat


    OCR Scan     		VCO-107 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan     		SSW-107 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan     		SSW-107 30dBat2GHz 500MHz PDF

    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


    OCR Scan     		23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107 PDF

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


    OCR Scan     		PDF

    15VPH

    Abstract: I-10K
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,


    OCR Scan     		FX-107, FX-207 FX-307 FX-207, FX-307, C-073 15VPH I-10K PDF

    square wave tone generator

    Abstract: FX-207 sequential logic circuit experiments rs 307 FX-107 FX-307 1803 FX FX107
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATIOM SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only ’07 SERIES FX-107 GENERAL DESCRIPTION The FX -107, FX-207 and FX-307 are a powerful and flexible family of high performance monolithic signalling devices,


    OCR Scan     		FX-107 FX-107, FX-207 FX-307 FX-207, FX-307, C-073 C-073 FX-307) square wave tone generator sequential logic circuit experiments rs 307 FX-107 1803 FX FX107 PDF

    transistor BS 107

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor vDS ^ D S o n BS 107 = 200 V = 0.13 A = 26 Q • N channel • Enhancement mode • Package: T O -9 2 ') Type Ordering code for version on tape Ordering code for version in bulk BS 107 Q67000-S078 Q67000-S060 Maximum Ratings


    OCR Scan     		Q67000-S078 Q67000-S060 transistor BS 107 PDF

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


    OCR Scan     		BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors PDF