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    1067 TRANSISTOR Search Results

    1067 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1067 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A bjt

    Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
    Text: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1


    Original     		PDF AN-1067 AN-937. AN-944. AN-936. 2N2222A bjt 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES


    Original     		PDF BUX25 O-204AE 10MHz

    smd transistor marking j6

    Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
    Text: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation


    Original     		PDF ISL6227EVAL2Z ISL6227 ISL6227EVAL1 AN1068 smd transistor marking j6 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1067 Application Notes for AP3770 System Solution Prepared by Su Qing Hua System Engineering Dept. Regulation PSR . AP3770 has the special technique to suppress the audio noise, internal line compensation to reduce the number of system components, fixed cable


    Original     		PDF AP3770 AP3770,

    Untitled

    Abstract: No abstract text available
    Text: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE


    Original     		PDF MwT-H16 MwT-H16 equa75

    SOLAR TRANSISTOR

    Abstract: High Power Microwave Device
    Text: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE


    Original     		PDF MwT-H16 MwT-H16 SOLAR TRANSISTOR High Power Microwave Device

    smd transistor M28 sot23

    Abstract: ISL6225A CAP ELL 10UF SMD panasonic MSL level smd diode 5d isl6227caz smd diode 1d SMD Transistor 5f 4d SMD Transistor panasonic Radial lead MSL level
    Text: ISL6227EVAL1 DDR Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board DDR implementation. For information about the dual switcher application, please refer to the ISL6227EVAL2 Evaluation Board Setup Procedure.


    Original     		PDF ISL6227EVAL1 ISL6227 ISL6227EVAL2 300kHz TMK432BJ106MM-T SPC02SYAN BAT54WT1-T SSL-LXA3025IGC-TR smd transistor M28 sot23 ISL6225A CAP ELL 10UF SMD panasonic MSL level smd diode 5d isl6227caz smd diode 1d SMD Transistor 5f 4d SMD Transistor panasonic Radial lead MSL level

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    2n5830

    Abstract: No abstract text available
    Text: 2N5830 NPN small signal high voltage general purpose amplifier. 0.15 T. 1 of 2 Home Part Number: 2N5830 Online Store 2N5830 Diodes NPN s m all s ignal high v o lt age general purpo s e am plifier. Transistors


    Original     		PDF 2N5830 com/2n5830 2N5830

    TRANSISTOR zt751

    Abstract: zt751 SOT-223 zt751 PZT751T1-D
    Text: ON Semiconductort PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface


    Original     		PDF PZT751T1 inch/1000 PZT751T3 inch/4000 PZT65B TRANSISTOR zt751 zt751 SOT-223 zt751 PZT751T1-D

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistors PMSTA05; PMSTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Primarily intended for telephony and professional


    OCR Scan     		PDF OT323 PMSTA55 PMSTA56. PMSTA05 PMATA06 PMSTA05; PMSTA06 OT323) PMSTA06

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II


    OCR Scan     		PDF OT-23

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)


    OCR Scan     		PDF DN8650 DN8650, 16-pin

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz


    OCR Scan     		PDF 900MHz BFG196 Q62702-F1292 OT-223 900MHz

    DN8650

    Abstract: darlington buffer array Seven Transistor Array PNP DN-86
    Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • • • • • 7-circuit buffer Low output breakdown voltage : V ce sus = 35V (min)


    OCR Scan     		PDF DN8650 DN8650, 500mA 16-pin DIP016-P-0300D) 350mA bT32fiS2 DN8650 darlington buffer array Seven Transistor Array PNP DN-86

    pcf79735S

    Abstract: PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors
    Text: Philips Semiconductors Selection guide Alphanumerical index PAGE AU2901 Quad voltage comparator AU2902 Low power quad voltage comparator 1421 AU2903 Low power dual voltage comparator 1426 AU2904 Low power dual operational amplifier 1431 1416 BUK100-50DL PowerMOS transistor logic level TOPFET


    OCR Scan     		PDF AU2901 AU2902 AU2903 AU2904 BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS pcf79735S PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors

    TYP 513 309

    Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
    Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250


    OCR Scan     		PDF BC817 BC818 BC846 BC847 BC848 BC868 BCP54 BCP55 BCP56 BCP68 TYP 513 309 philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144

    D86DQ2

    Abstract: IRF330
    Text: M Û IRF330.331 D86DQ2.Q1 T 5.5 AMPERES 400, 350 VOLTS RDS(ON = 1.0 fi RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF330 D86DQ2 RF331 D86DQi RF330/D86DQ 250jiA,

    y-parameter

    Abstract: MPS-H81 MPSH81
    Text: MPS-H81 SILICON PNP SILICON E P IT A X IA L TRANSISTO R . designed fo r use in U H F /V H F oscillator applications. PNP SILICON TRANSISTOR C omplete y-Parameter Curves Low Collector-Em iitter Capacitance — Cce = 0.65 pF (Max) @ V CB = 10 Vdc High C urrent Gain — Bandwidth Product - @ I q = 6.0 mAdc


    OCR Scan     		PDF MPS-H81 y-parameter MPS-H81 MPSH81

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
    Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81


    OCR Scan     		PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transìstor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP4N50E T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA itiW N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP4N50E T0220AB

    1B47

    Abstract: SD1463
    Text: T SGS-THOMSON *7#. mW IUiOT@«i SD1463 TCC0204-125 rz RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ ■ ■ ■ 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION ■ P o u t = 125 W MIN. WITH 7.0 dB GAIN PIN CONNECTION 2 1 1 2 DESCRIPTION


    OCR Scan     		PDF SD1463 TCC0204-125) SD1463 1B47

    50 watts 10mhz 4a

    Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
    Text: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR


    OCR Scan     		PDF dd43sc PG1067 PG1084, PG1068 PG1069 PG1070 PG1071 PG1072 PG1073 50 watts 10mhz 4a API Electronics PG1083