1030 PULSED Search Results

Emitter

Abstract: APG2C1-1030
Contextual Info: APG2C1-1030 IR High Power single chip LED APG2C1-1030 is a GaAlAs based, high power 1030 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1030 nm Optical Output Power: typ. 60 mW

J264

Contextual Info: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold

Contextual Info: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090

1030MHz-1090MHz

Contextual Info: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width

transistor DF 50

Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER
Contextual Info: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold

1030MHz-1090MHz

Abstract: 1030mhz
Contextual Info: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width

TCS1200

Abstract: 55TU-1
Contextual Info: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty

1030

Abstract: MDS170L 1030 PULSED
Contextual Info: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The

1011LD300

Abstract: "RF MOSFET" 300W
Contextual Info: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090

f-1030-1090

Contextual Info: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090

Contextual Info: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090

Contextual Info: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090

Contextual Info: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090

df transistor

Abstract: 55KT
Contextual Info: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven

"RF MOSFET" 300W

Contextual Info: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090

1011LD200

Abstract: 1090MHZ
Contextual Info: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090

1011LD110

Contextual Info: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090

TPR500

Contextual Info: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

TPR400

Abstract: max7540
Contextual Info: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

df transistor

Abstract: 1000W TRANSISTOR 1030mhz ITC1000 DF 1 transistor 1000W
Contextual Info: R.A.P.990305-BEHRE ITC1000 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold

transistor A 1030

Abstract: 1030 PULSED
Contextual Info: MDS550L 550 Watts, 45 Volts Pulsed Avionics at 1030/1090 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST-1 Common Base The MDS550L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 and 1090 MHz, with the pulse width and

1458

Abstract: TCS600
Contextual Info: R.1.A.992005-HERICK TCS600 600 Watts, 50 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TCS600 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the

j329

Abstract: J3-29 duroid 5880 20AWG TPR400A J251
Contextual Info: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low

Contextual Info: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.