Emitter
Abstract: APG2C1-1030
Text: APG2C1-1030 IR High Power single chip LED APG2C1-1030 is a GaAlAs based, high power 1030 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1030 nm Optical Output Power: typ. 60 mW
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APG2C1-1030
APG2C1-1030
Emitter
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CF06V
Abstract: CF04T2-1575-XX 897 1747 CF12T3-1030 CF12T4-1030-XX CF06V3 smd 1472 CF04T3-870-XX CF04V 1030 mhz
Text: BANDPASS CERAMIC COAXIAL FILTERS Electrical specifications MICROWAVE GENERAL ELECTRICAL SPECIFICATIONS Model CF06T6-301-XX CF06T3-420-XX CF06S6-FFF-XX CF04T3-870-XX CF06T3-897-XX CF06T6-905-XX CF06T4-915-XX CF06T3-947-XX CF12T2-1030-XX CF06T3-1030-XX CF12T4-1030-XX
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CF06T6-301-XX
CF06T3-420-XX
CF06S6-FFF-XX
CF04T3-870-XX
CF06T3-897-XX
CF06T6-905-XX
CF06T4-915-XX
CF06T3-947-XX
CF12T2-1030-XX
CF06T3-1030-XX
CF06V
CF04T2-1575-XX
897 1747
CF12T3-1030
CF12T4-1030-XX
CF06V3
smd 1472
CF04T3-870-XX
CF04V
1030 mhz
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713470 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713121 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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we-pd
Abstract: we-pd m
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713151 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
we-pd
we-pd m
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713680 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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J264
Abstract: No abstract text available
Text: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
J264
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7447713047
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713047 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
7447713047
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713015 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713820 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
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7447713033
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713033 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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D-74638
7447713033
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Untitled
Abstract: No abstract text available
Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090
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1011LD110
55QZ-1
1011LD110
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1030MHz-1090MHz
Abstract: No abstract text available
Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
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25oC1
1030MHz
1090MHz
1030MHz-1090MHz
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transistor DF 50
Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER
Text: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
transistor DF 50
transistor 1000W
1030mhz
1000W TRANSISTOR
1000W TRANSISTOR POWER
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74477
Abstract: METRAHit 17
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713220 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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74477
METRAHit 17
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713100 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713150 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713082 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713330 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713101 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 7447713022 SPEICHERDROSSEL WE-PD 1030 Bezeichnung : description : POWER INDUCTOR WE-PD 1030 DATUM / DATE : 2011-02-17 A Mechanische Abmessungen / dimensions:
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TCS1200
Abstract: 55TU-1
Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty
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TCS1200
55TU-1
TCS1200
55TU-1
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1030
Abstract: MDS170L 1030 PULSED
Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The
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MDS170L
MDS170L
25oC2
1030
1030 PULSED
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1011LD300
Abstract: "RF MOSFET" 300W
Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090
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1011LD300
1011LD300
"RF MOSFET" 300W
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