Untitled
Abstract: No abstract text available
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work
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LH28Fxxx
LH28F800SUTD
1024Kx8/512Kx16)
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Untitled
Abstract: No abstract text available
Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
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bq4016/bq4016Y
1024Kx8
10-year
bq4016
608-bit
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Untitled
Abstract: No abstract text available
Text: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES n DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy
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EDI8F321024C
1024Kx32
EDI8F321024C
1024K
1024Kx4
ena20MMC
EDI8F321024C25MMC
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Untitled
Abstract: No abstract text available
Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
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bq4016/bq4016Y
1024Kx8
10-year
bq4016
608-bit
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Untitled
Abstract: No abstract text available
Text: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
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bq4016/bq4016Y
1024Kx8
bq4016
608-bit
10-year
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EDI8F321024C
Abstract: No abstract text available
Text: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ
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EDI8F321024C
1024Kx32
EDI8F321024C
1024K
1024Kx4
175-8F321024C
176-8F321024C
356-8F321024C
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Untitled
Abstract: No abstract text available
Text: EDI8G321024V 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12, 15, 17, and 20ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package
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EDI8G321024V
1024Kx32
EDI8G321024V
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EDI8F81024C
Abstract: EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC
Text: EDI8F81024C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F81024LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI8F81024C
1024Kx8
100ns
EDI8F81024LP)
EDI8F81024C
128Kx8
01581USA
EDI8F81024C100BSC
EDI8F81024C70BFC
EDI8F81024C70BSC
EDI8F81024C85BSC
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Untitled
Abstract: No abstract text available
Text: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory
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EDI8F321024C
1024Kx32
EDI8F321024C
1024K
1024Kx4
EDI8F321024C35MZC
EDI8F321024C45MZC
323D114
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Untitled
Abstract: No abstract text available
Text: WZ4KX3Ö 5KAM Module 1024Kx36 Static RAM CMOS, High Speed Module Features 1024Kx36 bit CMOS Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17, 20 and 25
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1024Kx36
EDI9G361024C
1024K
1024Kx4
EDI9G361024C25MNC
0H07C
70C07
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Untitled
Abstract: No abstract text available
Text: ! j * . WPF1024K32-XPBX 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY * FEATURES • Access Times of 9 0 ,150ns ■ Organized as 1024Kx32 ■ Perimeter Ball Grid Packaging ■ Commercial and Industrial Temperature Ranges • 35mm BGA: ■ 5 Volt Power Supply, 12 V pp
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WPF1024K32-XPBX
1024Kx32
150ns
1024Kx32
1024Kx8
1024K32
1024K
2048K
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Untitled
Abstract: No abstract text available
Text: AK5361024BWP 1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory MICEOCIECÏÏIT CORPORATION DESCRIPTION The Accutek AK5361024BWP high density memory module is a CMOS dynamic RAM organized in 1024Kx 36 bit words. The mod ule consists of two standard 1 Meg x 16 bits DRAMs and one 1 Meg
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AK5361024BWP
1024Kx
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WF1024K32-XXX
Abstract: sMD .v05 smd V05
Text: c WHITE /MICROELECTRONICS a WF1024K32-XXX 1024Kx32 12V FLASH M ODULE FEATURES • 100,000 Erase/Program C ycles ■ ■ Organized as 1024Kx32 ■ Com m ercial, Industrial and M ilita ry T em peratu re Ranges ■ A c c e s s T im es of 1 0 0 ,150nS Packaging:
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WF1024K32-XXX
1024Kx32
150nS
66-pin,
64KBytes
each1024Kx8
1024Kx32
1024K
2048K
WF1024K32-XXX
sMD .v05
smd V05
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Untitled
Abstract: No abstract text available
Text: TT WF1024K32-XXX 11/HITE / M I C R O E L E C T R O N I C S 1024Kx32 12V FLASH MODULE PRELIMINARY* FEATURES • 12 V o lt Programming. 5V ± 10% Supply. ■ Access Times of 100,150 nS ■ Low Power CMOS, 3mA Standby Typical ■ ■ Optional Ready/Busy status pinout in CQFP
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11/HITE
WF1024K32-XXX
1024Kx32
66-pin,
WF1024K32-XHX
WF1024K32-XG4X
1024K
150nS
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EDI8F81024C
Abstract: OC98N a410c
Text: ^EDI EDI8F81024C 1Mtgx8 SRAM Module ELECTRONC DESIGNS. WC 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns
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EDI8F81024C
1024Kx8
100ns
EDI8F81024LP)
EDI8F81024C
128Kx8
EDI8F81024C70BSC
EDI8F81024C70BSI.
OC98N
a410c
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8G321024V 1024KX32 SRAM Module ELECTRONIC DESIGNS, IN C 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit C M O S Static T h e E D I8 G 3 2 1 0 2 4 V is a high speed 32 m egabit Static RA M m odule organized as 1 0 2 4 K by 32 bits. This
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EDI8G321024V
1024KX32
15MMC
EDI8G321024V17MMC
EDI8G321024V20MMC
EDI8G321024V
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Untitled
Abstract: No abstract text available
Text: EDI8F321024C ^ E D I 11Q24KX32 SRAM Module EL£CTRüNICDE5lSN&INC 10mx32 Static RAM CHIOS, Hicfi Speed Module Features TheEDI8F321024C is a high speed 32 megabit Static RAM 1024Kx32 bit CMOS Static module organized as 1024K words by 32 bits. This module Random Access Memory
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EDI8F321024C
1024Kx32
10mx32
TheEDI8F321024C
1024K
1024Kx4
f1024C
321024C20M
321024C25M
321024C35IVIN
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C4001
Abstract: S13-146
Text: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate
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1024KX
1024K
7MC4001
C4001
T71257
30-pin
S13-150
IDT7MC4001
S13-146
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PN-84
Abstract: No abstract text available
Text: bq4016/bq4016Y BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description > D a ta retention in the absence of power The CM O S bq4016 is a nonvolatile 8,388,608-bit sta tic RAM organized a s 1,048,576 w ords by 8 bits. The in teg ra l control circuitry an d lithium
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bq4016/bq4016Y
1024Kx8
bq4016
608-bit
PN-84
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H31M1
Abstract: EDI8M11024C 901ac
Text: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con structed using four 256Kx1 Static RAMs in leadlesschip
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EDI8M11024C
EDI8M11024C
1024Kx1
256Kx1
Z01M1
X0H31
H31M1
H31M1
901ac
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This 1024Kx32 bit CMOS Static
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EDI8F321024C
1024Kx32
EDI8F321024C
1024K
1024Kx4
EDI8F321024C25MMC
EDI8F321024C35MMC
EDI8F321024C45MMC
EDI8F321024C25MZC
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Untitled
Abstract: No abstract text available
Text: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs
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WS512K32-XXX
512Kx32
512Kx32,
1024Kx16
10HXX*
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Untitled
Abstract: No abstract text available
Text: L •V □PM Dense-Pac Microsystems, Inc. x DPZ1MS16P 1024KX 16 FLASH MEMORY MODULE O PRELIMINARY DESCRIPTION: The DPZ1M S16P is a 16 megabit CM O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 128K x 8 FLASH memory devices
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DPZ1MS16P
1024KX
1024K
2048K
DPZ1MS16P)
DPZ1MS16XP)
30A051-00
DPZ1MS16XP
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Untitled
Abstract: No abstract text available
Text: CYM1471 CYM1481 CYPRESS 1024KX 8 SRAM Module 2048K x 8 SRAM Module F e a tu re s F u n c tio n a l D escription • High-density 8-/l6-m egabit SRAM modules The CYM1471 and CYM1481 are highperform ance 8-megabit and 16*megabit static RAM m odules organized as 1024K
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CYM1471
CYM1481
1024KX
2048K
1471PS
1471L
1471LPS--100C
CYM1471PS
--120C
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