1012 TRANSISTOR Search Results

LT/SG3527A

Contextual Info: Operational Amplifiers LT-1012 LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,

1012C

Abstract: LT/SG3527A
Contextual Info: LT-1012 Operational Amplifiers LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive

Contextual Info: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

Contextual Info: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for

zvs using op amps

Abstract: OP-07 OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics PM1008
Contextual Info: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only

transistor 1012 ge

Abstract: 741 voltage follower NT 101-2s pm1012aj
Contextual Info: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only

UTC1012

Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
Contextual Info: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

SCR TYN Series

Abstract: BTA 612 triacs BTA scr 12v 10amps tyn 064 SCR BTA scr bta 151 scr tyn 612 SCR BTA 16 SCR TYN 412
Contextual Info: iXi\' b 57 i'X N /T Y N 0 5 1 2 — > TXN/TYN 1012 SGS-THOMSON •u SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY ■ TXN Serie : INSULATED VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 —> TYN/TXN 1012 Family

fe 5571

Abstract: pe 5571 ic pe 5571 fa 5571 transistors type BC 5570 on 1012a ic aop 741 TMDB
Contextual Info: pm ! PM-1012 LOW-POWER, PRECISION OPERATIONAL AMPLIFIER Precision M onolith FEATURES • • Low Supply Current . 600pA Max Very Low Offset . 35/iV Max Low D rift. 1.5fiV/°C Max

transistor 1012

Abstract: 1012 transistor OP-07 Precision Monolithics Precision Monolithics OP07 Precision Monolithics MAT-04 OP-05 OP-07 OP-12 PM1012GP
Contextual Info: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • Low Supply C u rre n t. 600pA Max • Very Low O ffs e t. 35 fiV Max • Low Drift.

KSR1012

Abstract: KSR2012
Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

A1012

Contextual Info: LNA A 1012 Applications: Base Transceiver Stations, Tower Mounted Amplifier, Repeater Major Characteristics • Matched amplifier with low noise and high gain ■ Off-the-shelf component, tape & reel packaged ■ SMT compatible outline shape Leadless Chip Carrier

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: ANALOG DEVICES Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • Low Supply C u rren t. 600/iA Max Very Low O ffs e t. 35¡¡V Max Low Max

voltis

Abstract: FRL6796D FRL6796H FRL6796M FRL6796R
Contextual Info: Radiation-Hardened M OSFETs_ FRL6796M, FRL6796D, FRL6796R, FRL6796H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 8 A, 100 V rDS(on) = 0.18 fi TERMINAL DIAGRAM Features:

CA5470

Abstract: CA5470E CA5470M CA5470M96
Contextual Info: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation

staircase generator

Abstract: Wien Bridge Oscillator opamp single-supply wein bridge oscillator Dual Ganged Potentiometer ca3140 application circuit ca3140 equivalents CA3600E darlington cascode second stage CA3085 CA5130
Contextual Info: CA5160 NOT RECOMMENDED FOR NEW DESIGNS 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output September 1998 Features Description • MOSFET Input Stage - Very High ZI; 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II; 5pA (Typ) at 15V Operation

FRF6764D

Abstract: FRF6764H FRF6764M FRF6764R IFRF6764R A345 TO-254AA Package
Contextual Info: Radiation-Hardened MOSFETs_ FRF6764M, FRF6764D, FRF6764R, FRF6764H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 3 0 A , l*DS(on) 1 0 0 = TERMINAL DIAGRAM V 0 .0 5 5 Q

pa 3029 b

Abstract: CA5160 CA5260 CA5260A CA5260AE CA5260AM CA5260AM96 CA5260E CA5260M CA5260M96
Contextual Info: CA5260, CA5260A 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage provides - Very High ZI = 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation = 2pA (Typ) at 5V Operation

OP-07

Abstract: OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics, Inc pm1008
Contextual Info: A N A LO G D E V IC E S Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • • • • Low Supply C u r re n t. 600/iA Max Very Low O ffs e t. 35juV Max

CA5470

Abstract: CA5470E CA5470M CA5470M96
Contextual Info: CA5470 S E M I C O N D U C T O R November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ)