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    1012 TRANSISTOR Search Results

    1012 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1012 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive


    Original     		1000MHz 5963-2452E PDF

    Untitled

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for


    Original     		PDF

    A1012

    Abstract: No abstract text available
    Text: LNA A 1012 Applications: Base Transceiver Stations, Tower Mounted Amplifier, Repeater Major Characteristics • Matched amplifier with low noise and high gain ■ Off-the-shelf component, tape & reel packaged ■ SMT compatible outline shape Leadless Chip Carrier


    Original     		PDF

    PHILIPS SENSOR 2032

    Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
    Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V


    Original     		1616H 101CCD WAG-05 PHILIPS SENSOR 2032 .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer PDF

    STN1012

    Abstract: 1012 transistor SC89 SC-89 on SOT523 IS015
    Text: 1012 STN STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STN1012 STN1012 OT-523 SC-89 380ohm 450ohm 1012 transistor SC89 SC-89 on SOT523 IS015 PDF

    transistor 1012 F

    Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
    Text:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn PDF

    CA5470

    Abstract: CA5470E CA5470M CA5470M96
    Text: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation


    Original     		CA5470 14MHz, CA5470 CA5470E CA5470M CA5470M96 PDF

    staircase generator

    Abstract: Wien Bridge Oscillator opamp single-supply wein bridge oscillator Dual Ganged Potentiometer ca3140 application circuit ca3140 equivalents CA3600E darlington cascode second stage CA3085 CA5130
    Text: CA5160 NOT RECOMMENDED FOR NEW DESIGNS 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output September 1998 Features Description • MOSFET Input Stage - Very High ZI; 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II; 5pA (Typ) at 15V Operation


    Original     		CA5160 CA5160 CA5130 staircase generator Wien Bridge Oscillator opamp single-supply wein bridge oscillator Dual Ganged Potentiometer ca3140 application circuit ca3140 equivalents CA3600E darlington cascode second stage CA3085 PDF

    pa 3029 b

    Abstract: CA5160 CA5260 CA5260A CA5260AE CA5260AM CA5260AM96 CA5260E CA5260M CA5260M96
    Text: CA5260, CA5260A 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage provides - Very High ZI = 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation = 2pA (Typ) at 5V Operation


    Original     		CA5260, CA5260A CA5260A CA5260 CA5160 pa 3029 b CA5260AE CA5260AM CA5260AM96 CA5260E CA5260M CA5260M96 PDF

    CA5470

    Abstract: CA5470E CA5470M CA5470M96
    Text: CA5470 S E M I C O N D U C T O R November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ)


    Original     		CA5470 14MHz, CA5470 CA5470E CA5470M CA5470M96 PDF

    LT/SG3527A

    Abstract: No abstract text available
    Text: Operational Amplifiers LT-1012 LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,


    OCR Scan     		LT-1012 RC4097 LT-1012 LT/SG3527A PDF

    1012C

    Abstract: LT/SG3527A
    Text: LT-1012 Operational Amplifiers LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,


    OCR Scan     		LT-1012 LT-1012 114dB RC4097 1012C LT/SG3527A PDF

    Untitled

    Abstract: No abstract text available
    Text: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar


    OCR Scan     		PDF

    zvs using op amps

    Abstract: OP-07 OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics PM1008
    Text: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only


    OCR Scan     		PM-1012 600pA 35/iV 100pAMax 250pA 114dB PM1012AJ* PM1012AZ* PM1012GJ PM1012G2 zvs using op amps OP-07 OP-12 PM1012AJ PM1012AZ PM1012GP PM1012GS Precision Monolithics PM1008 PDF

    UTC1012

    Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
    Text: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar


    OCR Scan     		PDF

    SCR TYN Series

    Abstract: BTA 612 triacs BTA scr 12v 10amps tyn 064 SCR BTA scr bta 151 scr tyn 612 SCR BTA 16 SCR TYN 412
    Text: iXi\' b 57 i'X N /T Y N 0 5 1 2 — > TXN/TYN 1012 SGS-THOMSON •u SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY ■ TXN Serie : INSULATED VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 —> TYN/TXN 1012 Family


    OCR Scan     		E81734) 400Hz T0220AB SCR TYN Series BTA 612 triacs BTA scr 12v 10amps tyn 064 SCR BTA scr bta 151 scr tyn 612 SCR BTA 16 SCR TYN 412 PDF

    fe 5571

    Abstract: pe 5571 ic pe 5571 fa 5571 transistors type BC 5570 on 1012a ic aop 741 TMDB
    Text: pm ! PM-1012 LOW-POWER, PRECISION OPERATIONAL AMPLIFIER Precision M onolith FEATURES • • Low Supply Current . 600pA Max Very Low Offset . 35/iV Max Low D rift. 1.5fiV/°C Max


    OCR Scan     		PM-1012 OP-07, PM-1012 132dB AT-04 fe 5571 pe 5571 ic pe 5571 fa 5571 transistors type BC 5570 on 1012a ic aop 741 TMDB PDF

    transistor 1012

    Abstract: 1012 transistor OP-07 Precision Monolithics Precision Monolithics OP07 Precision Monolithics MAT-04 OP-05 OP-07 OP-12 PM1012GP
    Text: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • Low Supply C u rre n t. 600pA Max • Very Low O ffs e t. 35 fiV Max • Low Drift.


    OCR Scan     		PM-1012 600pA 35fiV 100pAMax 250pA 114dB OP-07, PM-1012 REF-01, MAT-04 transistor 1012 1012 transistor OP-07 Precision Monolithics Precision Monolithics OP07 Precision Monolithics OP-05 OP-07 OP-12 PM1012GP PDF

    KSR1012

    Abstract: KSR2012
    Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		KSR2012 KSR1012 -100nA, -10mA, KSR1012 KSR2012 PDF

    ksr1012

    Abstract: No abstract text available
    Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		KSR2012 ksr1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • Low Supply C u rren t. 600/iA Max Very Low O ffs e t. 35¡¡V Max Low Max


    OCR Scan     		PM-1012 600/iA 100pAMax 250pA 114dB REF-01, MAT-04â MAT-04 PDF

    voltis

    Abstract: FRL6796D FRL6796H FRL6796M FRL6796R
    Text: Radiation-Hardened M OSFETs_ FRL6796M, FRL6796D, FRL6796R, FRL6796H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 8 A, 100 V rDS(on) = 0.18 fi TERMINAL DIAGRAM Features:


    OCR Scan     		FRL6796M, FRL6796D, FRL6796R, FRL6796H FRL6796M FRL6796D FRL6796R FRL6796H 1000K voltis PDF

    FRF6764D

    Abstract: FRF6764H FRF6764M FRF6764R IFRF6764R A345 TO-254AA Package
    Text: Radiation-Hardened MOSFETs_ FRF6764M, FRF6764D, FRF6764R, FRF6764H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 3 0 A , l*DS(on) 1 0 0 = TERMINAL DIAGRAM V 0 .0 5 5 Q


    OCR Scan     		FRF6764M, FRF6764D, FRF6764R, FRF6764H FRF6764M FRF6764D FRF6764R FRF6764H 1000K IFRF6764R A345 TO-254AA Package PDF

    OP-07

    Abstract: OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics, Inc pm1008
    Text: A N A LO G D E V IC E S Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • • • • Low Supply C u r re n t. 600/iA Max Very Low O ffs e t. 35juV Max


    OCR Scan     		PM-1012 600/iA 100pAMax 250pA 114dB to-99 PM1012AJ* PM1012AZ' PM1012GJ PM1012GP OP-07 OP-12 PM1012AJ PM1012AZ PM1012GS Precision Monolithics, Inc pm1008 PDF