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Text: PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 02 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN012-100YS N-channel 100V 12mΩ standard level MOSFET in LFPAK Rev. 04 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN012-100YS N-channel 100V 12.8mΩ standard level MOSFET in LFPAK Rev. 02 — 14 December 2009 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 7 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
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Text: PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Rev. 02 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 03 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: LF PA K PSMN020-100YS N-channel 100V 20.5 mΩ standard level MOSFET in LFPAK Rev. 3 — 18 June 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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max5228
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Text: PSMN028-100YS N-channel LFPAK 100 V 28 mΩ standard level MOSFET Rev. 01 — 10 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN016-100YS N-channel 100V 16mΩ standard level MOSFET in LFPAK Rev. 01 — 5 January 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 01 — 31 August 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: LF PA K PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
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Text: PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,
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Text: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
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Text: PSMN016-100YS N-channel 100 V 16 mΩ standard level MOSFET in LFPAK Rev. 02 — 25 January 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Abstract: 175C D586 sot669 package
Text: PSMN012-100YS N-channel 100V 13mΩ standard level MOSFET in TO220 Rev. 01 — 22 October 2009 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in a SOT669 package qualified to 175C. This product is designed and qualified for use in computing, communications,
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Text: PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Rev. 02 — 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN039-100YS
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psmn028-100ys
Abstract: No abstract text available
Text: PSMN028-100YS N-channel LFPAK 100V 27.5 mΩ standard level MOSFET Rev. 02 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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Text: PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Rev. 01 — 14 January 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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TLP641G
Abstract: No abstract text available
Text: D e I ^ O T T S S D 00174^0 T | ~ TOSHIBA {DISCRETE/OPTO! 99D 9097250 TOSHIBA <DISCRETE/OPTO 17498 D T-V/-S7 TLP64 I G GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP641G consists of a photothyristor optically coupled to a gallium arsenide infrared emitting diode in a.six
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TLP64
TLP641G
150mA
E67349
100ys
D017SD0
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Untitled
Abstract: No abstract text available
Text: TVS DEVICE SUMMARY Advantages Suppression Element Examples of Use Disadvantages Gas Tube • Very high current handling capability • Low Capacitance • High insulation resistance • Very high firing voltage • Finite life cycle • Slow response times
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A90V
Abstract: L10-140
Text: L10 POWERZORB Transient Absorption Foldback Module Silicon double anode construction with unique symmetrical characteristic, used primarily for circuit protection in Telecommunictions. The L10-140 CD is designed as an alternative to gas discharge tubes with the fast turn on
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L10-140
sS5x10
25Vdc
50Vds
A90V
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S52K
Abstract: No abstract text available
Text: I«R DE 4855452 INTERNATIONAL R E C T IF IE R D E |i4 Û S S 4 S a 02E 0 7 8 1 3 □ □ 0 7 f ll3 D 7^ t. | S52K SERIES 400-200 VOLTS RANGE 3000 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS PART NUMBER Vrsh - tv Hex. n o n -ra p . peek
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S52K4A
S52K2A
S52K
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GQCC1-J68
Abstract: 87c451 80C51 83C451 87C51 AVR* "add immediate" TLO 81
Text: Philips S em ico n d uctors M ilitary M icrop ro cesso r P roducts P ro du ct specifica tio n CMOS single-chip 8-bit EPROM microcontroller FEATURES 87C451 ORDERING INFORMATION • User-programmable microcontroller ORDER CODE PKG DESIGNATION* 68-Pin J Bend QFP
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87C451
80C51
68-Pin
128x8
16-bit
12MHz
87C451
Mav22
GQCC1-J68
83C451
87C51
AVR* "add immediate"
TLO 81
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IR-S30EF
Abstract: S30EF S30EF12A B513 international rectifier NE 22 S30EF14A 07028 AVL 5M 03 300 US3005 PD3160
Text: INTE RN ATI ONA L RECTIFIER IO R in t e r n a t io n a l DE | 4 Ö S S 4 SE G O û T O n 73 ñ - f - z. 5-/7 Data Sheet No. PD-3.161 r e c t if ie r S30EF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-O FF TIM E 30 ¡ j s 750 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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S545S
07Glci
S30EF
S30EF
16yis
S30EF12A.
IR-S30EF
S30EF12A
B513
international rectifier NE 22
S30EF14A
07028
AVL 5M 03 300
US3005
PD3160
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